摘要:
The present disclosure provides a semiconductor package that prevents a bump bridge from being formed between adjacent conductive bumps to realize a fine bump pitch when each unit circuit part is directly stacked without using a printed circuit board and a method for manufacturing the same. The semiconductor package includes a first semiconductor chip structure including a first unit circuit part, a first passivation layer disposed on the first unit circuit part, and a conductive bump electrically connected to the first unit circuit part, and a second semiconductor chip structure including a second unit circuit part, a second passivation layer having a stepped portion that is recessed inward and disposed on the second unit circuit part, and a bump pad provided in the stepped portion. The first semiconductor chip structure and the second semiconductor chip structure are stacked to allow the conductive bump to be bonded to the bump pad within the stepped portion.
摘要:
The invention discloses a light engine array comprises a multiple light engines arranged into an array, multiple dams located on a first surface of the light engines; and the dams combined a dam array.
摘要:
A method for manufacturing a semiconductor device includes: providing a support with a semiconductor light-emitting element including a first electrode and a second electrode; providing a base including a first interconnect terminal and a second interconnect terminal; forming a first metal layer on the support to cover the first and the second electrodes; forming a second metal layer on the base to cover the first and the second interconnect terminals; arranging the first and second electrodes and the first and second interconnect terminals to respectively face each other, and providing electrical connection therebetween by atomic diffusion; and rendering electrically insulative or removing portions of the first metal layer and the second metal layer that are outside thereof defined between the first and second electrodes and the first and second interconnect terminals.
摘要:
An electronic device includes: an electronic component including an external connection terminal; and a lead frame (metal member) connected to the external connection terminal. The lead frame is disposed with a pad. The pad overlaps the external connection terminal in plan view, and at least a portion of the pad is located outside the external shape of the electronic component in plan view. The pad and the external connection terminal are connected by means of a conductive bonding member. The pad and the electronic component are bonded together with a resin. The resin extends to a region of the pad located outside the external shape of the electronic component in plan view.
摘要:
The teachings of the present disclosure may be applied to the manufacture and design of capacitors. In some embodiments of these teachings, a capacitor may be formed on a heavily doped substrate. For example, a method for manufacturing a capacitor may include: depositing an oxide layer on a first side of a heavily doped substrate; depositing a first metal layer on the oxide layer; and depositing a second metal layer on a second side of the heavily doped substrate.
摘要:
The present disclosure provides a semiconductor package that prevents a bump bridge from being formed between adjacent conductive bumps to realize a fine bump pitch when each unit circuit part is directly stacked without using a printed circuit board and a method for manufacturing the same. The semiconductor package includes a first semiconductor chip structure including a first unit circuit part, a first passivation layer disposed on the first unit circuit part, and a conductive bump electrically connected to the first unit circuit part, and a second semiconductor chip structure including a second unit circuit part, a second passivation layer having a stepped portion that is recessed inward and disposed on the second unit circuit part, and a bump pad provided in the stepped portion. The first semiconductor chip structure and the second semiconductor chip structure are stacked to allow the conductive bump to be bonded to the bump pad within the stepped portion.
摘要:
An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding. An embodiment chip-to-chip structure may be fabricated in a similar fashion.
摘要:
A bump structure includes a contact element formed on a substrate and a passivation layer overlying the substrate. The passivation layer includes a passivation opening exposing the contact element. The bump structure also includes a polyimide layer overlying the passivation layer and an under bump metallurgy (UBM) feature electrically coupled to the contact element. The polyimide layer has a polyimide opening exposing the contact element, and the under bump metallurgy feature has a UBM width. The bump structure further includes a copper pillar on the under bump metallurgy feature. A distal end of the copper pillar has a pillar width, and the UBM width is greater than the pillar width.
摘要:
Electronic devices with improved thermal performance, such as thermal dissipation, of flip chip packages that include one or more flip chip dies are disclosed. In some embodiments, a thermal collection layer can be formed on a surface of a flip chip die. The thermal collection layer can be configured to dissipate heat generated by the flip chip die. In some variations, the thermal collection layer can be constructed using materials having high thermal conductivity.
摘要:
In one embodiment, a semiconductor package includes a semiconductor die having conductive pads. A lead frame is directly connected to the conductive pads using an electrochemically formed layer or a conductive adhesive layer thereby facilitating an electrical connection between the conductive pads of the semiconductor die and the lead frame without using separate wire bonds or conductive bumps.