公开(公告)号：US10344187B2

公开(公告)日：2019-07-09

申请号：US14561188

申请日：2014-12-04

Applicant: NITTA HAAS INCORPORATED ,  SUMCO CORPORATION

Inventor： Masashi Teramoto ,  Shinichi Ogata ,  Ryuichi Tanimoto

IPC: C09G1/04 ,  H01L21/02 ,  C09G1/02 ,  H01L21/306

Abstract: Provided is a polishing composition that does not contain abrasives and that is used for polishing a silicon wafer, the polishing composition including a pH buffer, a polishing accelerator, a water-soluble polymer, and a block-type compound. By polishing a silicon wafer by using the polishing composition, a polishing speed of greater than 0.1 μm/min can be achieved.

公开(公告)号：US10344184B2

公开(公告)日：2019-07-09

申请号：US15129835

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: C09G1/02 ,  H01L21/02 ,  C09K3/14

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

公开(公告)号：US10249486B2

公开(公告)日：2019-04-02

申请号：US15129842

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: H01L21/02

Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

公开(公告)号：US10077380B2

公开(公告)日：2018-09-18

申请号：US15129836

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: C09G1/02 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.

公开(公告)号：US20150093900A1

公开(公告)日：2015-04-02

申请号：US14039390

申请日：2013-09-27

Applicant: Nitta Haas Incorporated ,  Rohm and Haas Electronic Materials CMP Holdings, Inc.

Inventor： Yasuyuki Itai ,  Naresh Kumar Penta ,  Naoko Kawai ,  Hiroyuki Nakano ,  Shinichi Haba ,  Yoshiharu Ota ,  Takayuki Matsushita ,  Masashi Teramoto ,  Sakiko Nakashima ,  Tomoyuki Toda ,  Koichi Yoshida ,  Lee Melbourne Cook

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/31051

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract translation: 提供了一种用于抛光硅晶片的化学机械抛光组合物，其包含：水，任选的研磨剂; 式（I）的阳离子; 哌嗪或根据式（II）的哌嗪衍生物; 和季铵化合物; 其中化学机械抛光组合物的pH为9〜12。还提供了制造和使用化学机械抛光组合物的方法。

公开(公告)号：US09150759B2

公开(公告)日：2015-10-06

申请号：US14039390

申请日：2013-09-27

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Nitta Haas Incorporated

Inventor： Yasuyuki Itai ,  Naresh Kumar Penta ,  Naoko Kawai ,  Hiroyuki Nakano ,  Shinichi Haba ,  Yoshiharu Ota ,  Takayuki Matsushita ,  Masashi Teramoto ,  Sakiko Nakashima ,  Tomoyuki Toda ,  Koichi Yoshida ,  Lee Melbourne Cook

IPC: H01L21/302 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/31051

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract translation: 提供了一种用于抛光硅晶片的化学机械抛光组合物，其包含：水，任选的研磨剂; 式（I）的阳离子; 哌嗪或根据式（II）的哌嗪衍生物; 和季铵化合物; 其中化学机械抛光组合物的pH为9〜12。还提供了制造和使用化学机械抛光组合物的方法。