公开(公告)号：US10344184B2

公开(公告)日：2019-07-09

申请号：US15129835

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: C09G1/02 ,  H01L21/02 ,  C09K3/14

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

公开(公告)号：US09150759B2

公开(公告)日：2015-10-06

申请号：US14039390

申请日：2013-09-27

Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc. ,  Nitta Haas Incorporated

Inventor： Yasuyuki Itai ,  Naresh Kumar Penta ,  Naoko Kawai ,  Hiroyuki Nakano ,  Shinichi Haba ,  Yoshiharu Ota ,  Takayuki Matsushita ,  Masashi Teramoto ,  Sakiko Nakashima ,  Tomoyuki Toda ,  Koichi Yoshida ,  Lee Melbourne Cook

IPC: H01L21/302 ,  C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/31051

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract translation: 提供了一种用于抛光硅晶片的化学机械抛光组合物，其包含：水，任选的研磨剂; 式（I）的阳离子; 哌嗪或根据式（II）的哌嗪衍生物; 和季铵化合物; 其中化学机械抛光组合物的pH为9〜12。还提供了制造和使用化学机械抛光组合物的方法。

公开(公告)号：US20150093900A1

公开(公告)日：2015-04-02

申请号：US14039390

申请日：2013-09-27

Applicant: Nitta Haas Incorporated ,  Rohm and Haas Electronic Materials CMP Holdings, Inc.

Inventor： Yasuyuki Itai ,  Naresh Kumar Penta ,  Naoko Kawai ,  Hiroyuki Nakano ,  Shinichi Haba ,  Yoshiharu Ota ,  Takayuki Matsushita ,  Masashi Teramoto ,  Sakiko Nakashima ,  Tomoyuki Toda ,  Koichi Yoshida ,  Lee Melbourne Cook

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/31051

Abstract: A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.

Abstract translation: 提供了一种用于抛光硅晶片的化学机械抛光组合物，其包含：水，任选的研磨剂; 式（I）的阳离子; 哌嗪或根据式（II）的哌嗪衍生物; 和季铵化合物; 其中化学机械抛光组合物的pH为9〜12。还提供了制造和使用化学机械抛光组合物的方法。

公开(公告)号：US10249486B2

公开(公告)日：2019-04-02

申请号：US15129842

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: H01L21/02

Abstract: Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

公开(公告)号：US10077380B2

公开(公告)日：2018-09-18

申请号：US15129836

申请日：2015-03-30

Applicant: NITTA HAAS INCORPORATED

Inventor： Masashi Teramoto ,  Tatsuya Nakauchi ,  Noriaki Sugita ,  Shinichi Haba ,  Akiko Miyamoto

IPC: C09G1/02 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

Abstract: Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.