公开(公告)号：US20090001401A1

公开(公告)日：2009-01-01

申请号：US10572486

申请日：2005-08-05

申请人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.

摘要翻译： 提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极 硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射 层以进一步提高发光二极管的发光效率。

公开(公告)号：US07791095B2

公开(公告)日：2010-09-07

申请号：US10572486

申请日：2005-08-05

申请人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.

摘要翻译： 提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极 硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射 层以进一步提高发光二极管的发光效率。

公开(公告)号：US07772587B2

公开(公告)日：2010-08-10

申请号：US12096764

申请日：2006-03-14

申请人： Kyung Hyun Kim ,  Nae Man Park ,  Chul Huh ,  Tae Youb Kim ,  Jae Heon Shin ,  Kwan Sik Cho ,  Gun Yong Sung

发明人： Kyung Hyun Kim ,  Nae Man Park ,  Chul Huh ,  Tae Youb Kim ,  Jae Heon Shin ,  Kwan Sik Cho ,  Gun Yong Sung

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/34 ,  H01L33/38 ,  H01L2933/0091

摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.

摘要翻译： 由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。 因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。 本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构， 上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

公开(公告)号：US08222055B2

公开(公告)日：2012-07-17

申请号：US12613869

申请日：2009-11-06

申请人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

发明人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  C23C16/30 ,  C23C16/345 ,  H01L33/08 ,  H01L33/18 ,  Y10S977/773

摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.

摘要翻译： 提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。 发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。 由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

公开(公告)号：US20080303018A1

公开(公告)日：2008-12-11

申请号：US12096764

申请日：2006-03-14

申请人： Kyung Hyun Kim ,  Nae Man Park ,  Chul Huh ,  Tae Youb Kim ,  Jae Heon Shin ,  Kwan Sik Cho ,  Gun Yong Sung

发明人： Kyung Hyun Kim ,  Nae Man Park ,  Chul Huh ,  Tae Youb Kim ,  Jae Heon Shin ,  Kwan Sik Cho ,  Gun Yong Sung

IPC分类号： H01L29/06 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/34 ,  H01L33/38 ,  H01L2933/0091

摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.

摘要翻译： 由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。 因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。 本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构， 上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

公开(公告)号：US20090101928A1

公开(公告)日：2009-04-23

申请号：US11577728

申请日：2005-12-07

申请人： Kyung Hyun Kim ,  Rae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Kyung Hyun Kim ,  Rae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00 ,  H01J1/62 ,  H01L51/52 ,  H01L51/54 ,  H01L51/56 ,  H01L51/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L51/52 ,  H01L51/5206

摘要： Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode. As a result, the adhesion between the substrate and the transparent electrode or between the upper doping layer and the transparent electrode is enhanced and the layer separation from the transparent electrode is prevented, thereby improving efficiency of the light emitting diode and increasing the production yield.

摘要翻译： 提供一种发光二极管及其制造方法。 在无机发光二极管中，在与透明电极接触的上掺杂层上形成选自由氧化物层，氮化物层和金属层组成的组中的至少一层，等离子体处理为 在所得结构上进行等离子体蚀刻层，从而提高上掺杂层和透明电极之间的粘附性。 在有机发光二极管中，在与透明电极接触的塑料基板上形成选自氧化物层，氮化物层和金属层的至少一层，进行等离子体处理 在所得结构上形成等离子体蚀刻层，从而提高基板和透明电极之间的粘附性。 结果，衬底与透明电极之间或上部掺杂层和透明电极之间的粘附性增强，并且防止了与透明电极的层分离，从而提高了发光二极管的效率并提高了产量。

公开(公告)号：US08275008B2

公开(公告)日：2012-09-25

申请号：US12745514

申请日：2008-04-02

申请人： Hyun Sung Ko ,  Chul Huh ,  Kyung Hyun Kim ,  Jong Cheol Hong ,  Wan Joong Kim ,  Gun Yong Sung ,  Seon Hee Park

发明人： Hyun Sung Ko ,  Chul Huh ,  Kyung Hyun Kim ,  Jong Cheol Hong ,  Wan Joong Kim ,  Gun Yong Sung ,  Seon Hee Park

IPC分类号： H01S3/10

CPC分类号： H01S5/0261 ,  H01S5/0612 ,  H01S5/1085 ,  H01S5/183 ,  H01S5/4031

摘要： A semiconductor laser apparatus is provided which can vary an output wavelength of a light source. A semiconductor laser diode and one or more heat source devices arranged around the semiconductor laser diode are integrated on one substrate. The semiconductor laser diode is configured to be uniformly heated by the heat source device. An output wavelength of the semiconductor laser diode can be easily and quickly varied.

摘要翻译： 提供一种能够改变光源的输出波长的半导体激光装置。 半导体激光二极管和设置在半导体激光二极管周围的一个或多个热源器件集成在一个衬底上。 半导体激光二极管被构造成由热源装置均匀地加热。 半导体激光二极管的输出波长可以容易且快速地变化。

公开(公告)号：US08292608B2

公开(公告)日：2012-10-23

申请号：US12743117

申请日：2008-05-21

申请人： Kyung Hyun Kim ,  Chul Huh ,  Hyun Sung Ko ,  Jong Cheol Hong ,  Wan Joong Kim ,  Gun Yong Sung ,  Seon Hee Park

发明人： Kyung Hyun Kim ,  Chul Huh ,  Hyun Sung Ko ,  Jong Cheol Hong ,  Wan Joong Kim ,  Gun Yong Sung ,  Seon Hee Park

IPC分类号： B29C43/32

CPC分类号： H01L21/6838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： There are provided an apparatus for fixing a plastic sheet which fixes a plastic sheet to fabricate a nano pattern and a method of fabricating a nano pattern on a plastic sheet using the same. The apparatus for fixing a plastic sheet includes: a pair of planar metal guide rings interposingly fixing a plastic sheet from above and below, respectively; and a sheet fixing chuck including: a ring fixer sucking the pair of planar metal guide rings through a vacuum groove to be fixed thereto; and a sheet fixer having a plurality of vacuum pin holes formed therein, the vacuum pin holes sucking a bottom of the plastic sheet fixed by the planar metal guide rings. The apparatus allows fabrication of the nano pattern on the plastic sheet having less roughness than that of a semiconductor substrate or a glass substrate.

摘要翻译： 提供了一种用于固定塑料片以制造纳米图案的塑料片的设备和使用其形成在塑料片上的纳米图案的方法。 用于固定塑料片的装置包括：分别从上下固定塑料片的一对平面金属导向环; 以及片状固定卡盘，其包括：环形固定器，其通过真空槽吸附所述一对平面金属导向环以固定到其上; 以及具有形成在其中的多个真空针孔的片固定器，所述真空针孔吸附由所述平面金属导向环固定的所述塑料片的底部。 该装置允许在塑料片上制造具有比半导体衬底或玻璃衬底更小的粗糙度的纳米图案。

公开(公告)号：US08199325B2

公开(公告)日：2012-06-12

申请号：US12534464

申请日：2009-08-03

申请人： Wanjoong Kim ,  Chul Huh ,  Hyunsung Ko ,  Kyung Hyun Kim ,  Gun Yong Sung ,  Seon Hee Park ,  Bong Kyu Kim ,  Chil Seong Ah ,  Ansoon Kim

发明人： Wanjoong Kim ,  Chul Huh ,  Hyunsung Ko ,  Kyung Hyun Kim ,  Gun Yong Sung ,  Seon Hee Park ,  Bong Kyu Kim ,  Chil Seong Ah ,  Ansoon Kim

IPC分类号： G01N21/55

CPC分类号： G01N21/554 ,  G01N21/33

摘要： Provided are an apparatus and method for detecting biomaterials. The apparatus for detecting the biomaterials includes a light source unit, a biomaterial reacting unit, and a detection unit detecting. The light source unit provides incident light. The biomaterial reacting unit includes a substrate and metal nanoparticles spaced from the substrate. The surface plasmon resonance phenomenon is induced on surfaces of the metal nanoparticles by the incident light. First detecting molecules specifically binding to target molecules are immobilized to the surfaces of the metal nanoparticles. The detection unit detects a resonance wavelength of emission light emitted from the metal nanoparticles by the surface plasmon resonance phenomenon.

摘要翻译： 提供了用于检测生物材料的装置和方法。 用于检测生物材料的装置包括光源单元，生物材料反应单元和检测单元检测。 光源单元提供入射光。 生物材料反应单元包括与衬底间隔开的衬底和金属纳米颗粒。 通过入射光在金属纳米颗粒的表面上诱导表面等离子体共振现象。 首先检测与靶分子特异性结合的分子被固定在金属纳米粒子的表面。 检测单元通过表面等离子体共振现象检测从金属纳米颗粒发射的发射光的共振波长。

公开(公告)号：US08018595B2

公开(公告)日：2011-09-13

申请号：US12406851

申请日：2009-03-18

申请人： Chul Huh ,  Kyung Hyun Kim ,  Hyunsung Ko ,  Wanjoong Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Bong-Kyu Kim

发明人： Chul Huh ,  Kyung Hyun Kim ,  Hyunsung Ko ,  Wanjoong Kim ,  Gun Yong Sung ,  Seon-Hee Park ,  Bong-Kyu Kim

IPC分类号： G01N21/00

CPC分类号： G01N21/77 ,  G01N21/554 ,  G01N2021/7783

摘要： Provided is an apparatus for detecting bio materials and a method for detecting bio materials by using the apparatus. The apparatus includes a bio material reacting unit, an optical source unit, and a detecting unit. The bio material reacting unit includes bio sensing materials immobilized on gold nanoparticles. The optical source unit emits light toward the bio material reacting unit. The detecting unit measures variations of surface absorbance of the gold nanoparticles by detecting light transmitted through the bio material reacting unit before and after a bio material is bound to the bio sensing materials.

摘要翻译： 提供了一种用于检测生物材料的装置和通过使用该装置检测生物材料的方法。 该装置包括生物材料反应单元，光源单元和检测单元。 生物材料反应单元包括固定在金纳米颗粒上的生物传感材料。 光源单元向生物材料反应单元发射光。 检测单元通过在生物材料结合到生物传感材料之前和之后检测透过生物材料反应单元的光来测量金纳米颗粒的表面吸光度的变化。