公开(公告)号：US08222055B2

公开(公告)日：2012-07-17

申请号：US12613869

申请日：2009-11-06

申请人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

发明人： Tae Youb Kim ,  Nae Man Park ,  Kyung Hyun Kim ,  Gun Yong Sung

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  C23C16/30 ,  C23C16/345 ,  H01L33/08 ,  H01L33/18 ,  Y10S977/773

摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.

摘要翻译： 提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。 发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。 由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

公开(公告)号：US20080290360A1

公开(公告)日：2008-11-27

申请号：US12096751

申请日：2006-04-25

申请人： Tae-Youb Kim ,  Nae-Man Park ,  Gun-Yong Sung ,  Jong-Heon Yang

发明人： Tae-Youb Kim ,  Nae-Man Park ,  Gun-Yong Sung ,  Jong-Heon Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/06 ,  H01L33/10 ,  H01L33/18 ,  H01L33/34 ,  H01L33/60

摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.

摘要翻译： 提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。 硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型 掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。 每个凹槽的侧表面与发光二极管层分离并用作反射镜。该侧表面被称为侧反射镜。

公开(公告)号：US06773946B2

公开(公告)日：2004-08-10

申请号：US10330336

申请日：2002-12-30

申请人： Yong Tae Moon ,  Nae Man Park ,  Baek Hyun Kim ,  Seong Ju Park

发明人： Yong Tae Moon ,  Nae Man Park ,  Baek Hyun Kim ,  Seong Ju Park

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/0262 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

摘要： Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided. Furthermore, the nanosized multiple quantum well light-emitting diode according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor light-emitting diode using III-nitride epitaxial thin films grown on silicon substrates. In addition, the number of processes of fabricating the diode is remarkably reduced to result in an economical and productive light-emitting diode fabrication process.

摘要翻译： 公开了一种纳米尺寸的III族氮化物化合物半导体多量子阱发光二极管，包括硅衬底（100）和形成在衬底上的非晶氮化硅层（基底）（200），并且包括III族氮化物半导体纳米晶粒 （230）自发形成。 根据本发明的纳米尺寸氮化物半导体多量子阱发光二极管及其制造方法没有在硅衬底上常规III族氮化物化合物半导体外延薄膜生长的问题。 因此，可以提供不具有结晶缺陷的高质量的纳米级III族氮化物化合物半导体多量子阱发光二极管。 此外，根据本发明的纳米尺度多量子阱发光二极管不需要p型GaN薄膜，因此不存在在制造III族氮化物化合物的常规方法中存在问题的可能性 使用在硅衬底上生长的III族氮化物外延薄膜的半导体发光二极管。 此外，制造二极管的工艺的数量显着减少，从而导致经济和高效的发光二极管制造工艺。

公开(公告)号：US20100048002A1

公开(公告)日：2010-02-25

申请号：US12613869

申请日：2009-11-06

申请人： Tae Youb KIM ,  Nae Man PARK ,  Kyung Hyun KIM ,  Gun Yong SUNG

发明人： Tae Youb KIM ,  Nae Man PARK ,  Kyung Hyun KIM ,  Gun Yong SUNG

IPC分类号： H01L21/04

CPC分类号： H01L33/34 ,  C23C16/30 ,  C23C16/345 ,  H01L33/08 ,  H01L33/18 ,  Y10S977/773

摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.

摘要翻译： 提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。 发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。 由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

公开(公告)号：US20080296593A1

公开(公告)日：2008-12-04

申请号：US12096610

申请日：2006-06-16

申请人： Nae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/26 ,  H01L33/34 ,  H01L33/42

摘要： Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid.

摘要翻译： 提供了一种高效率的硅发光器件，其包括改进的结构，通过该结构，比传统的发光器件朝向发光器件的侧面发射更多的光朝向其正面发射，以便提高亮度。 硅发光器件包括衬底，形成在衬底上的多个发光结构，每个发光结构包括有源层，以及金属电极，其包括形成在衬底下方的下金属电极和形成在其上的上金属电极 在发光结构上。 发光结构具有垂直横截面为反梯形的列形状。

公开(公告)号：US08022444B2

公开(公告)日：2011-09-20

申请号：US12195305

申请日：2008-08-20

申请人： Tae Youb Kim ,  Nae Man Park ,  Han Young Yu ,  Moon Gyu Jang ,  Jong Heon Yang

发明人： Tae Youb Kim ,  Nae Man Park ,  Han Young Yu ,  Moon Gyu Jang ,  Jong Heon Yang

IPC分类号： H01L27/085 ,  H01L27/14 ,  H01L21/00

CPC分类号： G01N27/4146 ,  G01N27/4145 ,  Y10S977/71 ,  Y10S977/742 ,  Y10S977/963

摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.

摘要翻译： 本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。 生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。 因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流 的生物材料检测部件，从而提高生物传感器的灵敏度。

公开(公告)号：US07982231B2

公开(公告)日：2011-07-19

申请号：US12096751

申请日：2006-04-25

申请人： Tae-Youb Kim ,  Nae-Man Park ,  Gun-Yong Sung ,  Jong-Heon Yang

发明人： Tae-Youb Kim ,  Nae-Man Park ,  Gun-Yong Sung ,  Jong-Heon Yang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/06 ,  H01L33/10 ,  H01L33/18 ,  H01L33/34 ,  H01L33/60

摘要： A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.

摘要翻译： 提供能够有效地利用通过包括侧反射镜朝向衬底的侧面辐射的光的硅发光二极管。 硅基发光二极管包括具有多个沟槽的p型硅衬底，形成在硅衬底的每个沟槽上的发光二极管层，发光二极管层包括有源层，n型 掺杂层和透明电极层，以及包含形成在p型硅衬底的底表面上的下金属电极的金属电极和形成在透明电极层的顶表面上的上金属电极。 每个凹槽的侧表面与发光二极管层分离并用作反射镜。 侧面被称为侧面反射镜。

公开(公告)号：US07671377B2

公开(公告)日：2010-03-02

申请号：US11720987

申请日：2005-11-14

申请人： Tae-Youb Kim ,  Nae-Man Park ,  Kyung-Hyun Kim ,  Gun-Yong Sung

发明人： Tae-Youb Kim ,  Nae-Man Park ,  Kyung-Hyun Kim ,  Gun-Yong Sung

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/465 ,  H01L33/34 ,  H01L33/38

摘要： Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.

摘要翻译： 提供了包括分布式布拉格反射器（DBR），n型掺杂层和p型衬底结构的高效硅基发光二极管（LED）。 硅基LED包括：具有p型台面基板结构的基板; 活性层，其形成在所述基材上并具有与所述第一表面相对的第一表面和第二表面; 面向有源层的第一表面的第一反射层; 第二反射层，其位于p型衬底结构的任一侧并面向有源层的第二表面; 夹在有源层和第一反射层之间的n型掺杂层; 电连接到所述n型掺杂层的第一电极; 以及与p型基板结构电连接的第二电极。

公开(公告)号：US20090001401A1

公开(公告)日：2009-01-01

申请号：US10572486

申请日：2005-08-05

申请人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

发明人： Nae Man Park ,  Kyung Hyun Kim ,  Tae Youb Kim ,  Gun Yong Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/38

摘要： Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.

摘要翻译： 提供一种半导体发光二极管，其中在上掺杂层或发光层的表面上形成多个上电极，并且在下掺杂层或基板的表面上形成至少一个下电极 硅基发光二极管或氮化物基发光二极管，以增强施加到电极的电流的扩展特性，从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射 层以进一步提高发光二极管的发光效率。

公开(公告)号：US06544870B2

公开(公告)日：2003-04-08

申请号：US09836175

申请日：2001-04-18

申请人： Nae Man Park ,  Tae Soo Kim ,  Seong Ju Park

发明人： Nae Man Park ,  Tae Soo Kim ,  Seong Ju Park

IPC分类号： H01L2136

CPC分类号： H01L33/346 ,  B82Y20/00 ,  H01L31/0352 ,  H01L33/06

摘要： The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emitting efficiency, and can emit light in the visible region including short wavelength region such as green and blue.