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11 条记录 (耗时 0.045 秒)

    Peer mobile router authentication method, and multiple peer care-of addresses registration method, and mobile router failover method for multi-homed mobile networks
    1.
    发明授权
    Peer mobile router authentication method, and multiple peer care-of addresses registration method, and mobile router failover method for multi-homed mobile networks 有权
    对等移动路由器认证方法，多个对等关心的地址注册方法，以及多归属移动网络的移动路由器故障切换方法

    公开(公告)号：US08102827B2

    公开(公告)日：2012-01-24

    申请号：US11970466

    申请日：2008-01-07

    申请人： Nak-Jung Choi ,  Eun-Kyoung Paik ,  Min-Ji Nam ,  Ji-Ho Ryu ,  Se-Jun Park ,  Byung-Soo Chang ,  Yang-Hee Choi

    发明人： Nak-Jung Choi ,  Eun-Kyoung Paik ,  Min-Ji Nam ,  Ji-Ho Ryu ,  Se-Jun Park ,  Byung-Soo Chang ,  Yang-Hee Choi

    IPC分类号： H04W4/00

    CPC分类号： H04L63/08 ,  H04L69/40 ,  H04W8/04 ,  H04W12/06 ,  H04W60/005 ,  H04W80/04 ,  H04W84/005

    摘要： Provided are a peer MR authentication method, a multiple peer CoAs registration method, a failover method for multi-homed mobile networks, and a computer readable recording medium thereof. The registering method includes the steps of: a) determining whether a second MR is around a first MR; b) at the first MR, transmitting a peer request message to the second MR; c) at the first MR, requesting a HA of the first MR to authenticate the second MR; d) at the HA, transmitting a peer registering request message to the second MR with a prefix of the first MR that transmit the authentication request message to perform RR authentication; and e) at the HA, notifying the authentication result of the second MR to the first MR when receiving a RR authentication result message including the prefix of the first MR to be registered as a peer from the second MR.

    摘要翻译： 提供了对等体MR认证方法，多对等体CoA注册方法，多归属移动网络的故障转移方法及其计算机可读记录介质。 注册方法包括以下步骤：a）确定第二MR是否在第一MR周围; b）在第一MR处，向第二MR发送对等请求消息; c）在第一MR，要求第一MR的医管局认证第二MR; d）在HA处，向具有发送认证请求消息的第一MR的前缀发送对等体注册请求消息以执行RR认证; 以及e）在所述HA处，当从所述第二MR接收到包括要注册为对等体的所述第一MR的前缀的RR认证结果消息时，向所述第一MR通知所述第二MR的认证结果。

    Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the same
    2.
    发明申请
    Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the same 有权
    用于形成半导体器件的图案的方法，使用相同方法形成电荷存储图案的方法，非易失性存储器件及其制造方法

    公开(公告)号：US20080308860A1

    公开(公告)日：2008-12-18

    申请号：US12213305

    申请日：2008-06-18

    申请人： Hee-Soo Kang ,  Choong-Ho Lee ,  Suk-Kang Sung ,  Se-Jun Park

    发明人： Hee-Soo Kang ,  Choong-Ho Lee ,  Suk-Kang Sung ,  Se-Jun Park

    IPC分类号： H01L27/11 ,  H01L21/28 ,  H01L21/8239

    CPC分类号： H01L27/11529 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11531

    摘要： A method of forming a semiconductor device pattern, a method of forming a charge storage pattern, a non-volatile memory device including a charge storage pattern and a method of manufacturing the same are provided. The method of forming the charge storage pattern including forming a trench on a substrate, and a device isolation pattern in the trench. The device isolation pattern protrudes from a surface of the substrate such that an opening exposing the substrate is formed. A tunnel oxide layer is formed on the substrate in the opening. A preliminary charge storage pattern is formed on the tunnel oxide layer and the device isolation pattern by selective deposition of conductive materials. The preliminary charge storage pattern may be removed from the device isolation pattern. The preliminary charge storage pattern remains only on the tunnel oxide layer to form the charge storage pattern on the substrate.

    摘要翻译： 提供一种形成半导体器件图案的方法，形成电荷存储图案的方法，包括电荷存储图案的非易失性存储器件及其制造方法。 形成电荷存储图案的方法包括在衬底上形成沟槽，以及在沟槽中形成器件隔离图案。 器件隔离图案从衬底的表面突出出来，形成露出衬底的开口。 在开口中的基板上形成隧道氧化物层。 通过导电材料的选择性沉积，在隧道氧化物层和器件隔离图案上形成初步电荷存储图案。 初步电荷存储图案可以从器件隔离图案中去除。 初始电荷存储图案仅保留在隧道氧化物层上，以在基板上形成电荷存储图案。

    Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the same
    3.
    发明授权
    Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the same 有权
    用于形成半导体器件的图案的方法，使用相同方法形成电荷存储图案的方法，非易失性存储器件及其制造方法

    公开(公告)号：US08158480B2

    公开(公告)日：2012-04-17

    申请号：US12213305

    申请日：2008-06-18

    申请人： Hee-Soo Kang ,  Choong-Ho Lee ,  Suk-Kang Sung ,  Se-Jun Park

    发明人： Hee-Soo Kang ,  Choong-Ho Lee ,  Suk-Kang Sung ,  Se-Jun Park

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11529 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11531

    摘要： A method of forming a semiconductor device pattern, a method of forming a charge storage pattern, a non-volatile memory device including a charge storage pattern and a method of manufacturing the same are provided. The method of forming the charge storage pattern including forming a trench on a substrate, and a device isolation pattern in the trench. The device isolation pattern protrudes from a surface of the substrate such that an opening exposing the substrate is formed. A tunnel oxide layer is formed on the substrate in the opening. A preliminary charge storage pattern is formed on the tunnel oxide layer and the device isolation pattern by selective deposition of conductive materials. The preliminary charge storage pattern may be removed from the device isolation pattern. The preliminary charge storage pattern remains only on the tunnel oxide layer to form the charge storage pattern on the substrate.

    摘要翻译： 提供一种形成半导体器件图案的方法，形成电荷存储图案的方法，包括电荷存储图案的非易失性存储器件及其制造方法。 形成电荷存储图案的方法包括在衬底上形成沟槽，以及在沟槽中形成器件隔离图案。 器件隔离图案从衬底的表面突出出来，形成露出衬底的开口。 在开口中的基板上形成隧道氧化物层。 通过导电材料的选择性沉积，在隧道氧化物层和器件隔离图案上形成初步电荷存储图案。 初步电荷存储图案可以从器件隔离图案中去除。 初始电荷存储图案仅保留在隧道氧化物层上，以在基板上形成电荷存储图案。

    USER TERMINAL, METHOD FOR PROVIDING POSITION AND METHOD FOR GUIDING ROUTE THEREOF
    6.
    发明申请
    USER TERMINAL, METHOD FOR PROVIDING POSITION AND METHOD FOR GUIDING ROUTE THEREOF 有权
    用户终端，用于提供位置的方法和用于指导路由的方法

    公开(公告)号：US20110159858A1

    公开(公告)日：2011-06-30

    申请号：US12938873

    申请日：2010-11-03

    申请人： Seung-dong YU ,  Woo-Yong Chang ,  Se-Jun Park ,  Min-jeong Moon ,  Soo-hong Park ,  Jin-guk Jeong

    发明人： Seung-dong YU ,  Woo-Yong Chang ,  Se-Jun Park ,  Min-jeong Moon ,  Soo-hong Park ,  Jin-guk Jeong

    IPC分类号： H04W24/00 ,  H04W4/18

    CPC分类号： G01C21/3438 ,  G01C21/3623 ,  G01C21/3679 ,  G06K9/00664

    摘要： A user terminal generates position information regarding a position of the user terminal, generates target recognition information for recognizing a target, communicates with a counterpart terminal, and determines whether the target recognition information conforms with first reference information. If so, the user terminal transmits the target recognition information and the position information to the counterpart terminal, and if the information does not conform, the terminal determines whether the target recognition information conforms with second reference information. Accordingly, the user terminal easily provides route guidance to a destination.

    摘要翻译： 用户终端生成关于用户终端的位置的位置信息，生成用于识别目标的目标识别信息，与对方终端进行通信，并且确定目标识别信息是否符合第一参考信息。 如果是，则用户终端向对方终端发送目标识别信息和位置信息，如果信息不一致，终端确定目标识别信息是否符合第二参考信息。 因此，用户终端容易地向目的地提供路线引导。

    METHODS OF FORMING A CARBON TYPE HARD MASK LAYER USING INDUCED COUPLED PLASMA AND METHODS OF FORMING PATTERNS USING THE SAME
    10.
    发明申请
    METHODS OF FORMING A CARBON TYPE HARD MASK LAYER USING INDUCED COUPLED PLASMA AND METHODS OF FORMING PATTERNS USING THE SAME 审中-公开
    使用感应耦合等离子体形成碳类硬掩模层的方法和使用其形成图案的方法

    公开(公告)号：US20120276743A1

    公开(公告)日：2012-11-01

    申请号：US13456312

    申请日：2012-04-26

    申请人： Jai-Hyung Won ,  Se-Jun Park

    发明人： Jai-Hyung Won ,  Se-Jun Park

    IPC分类号： H01L21/311 ,  H01L21/314

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11582 ,  H01L28/91

    摘要： A method of forming a carbon type hard mask layer using induced coupled plasma includes loading a substrate onto a lower electrode in a process chamber of an induced coupled plasma (ICP) deposition apparatus, the process chamber including an upper electrode and the lower electrode therein, generating a plasma in the process chamber, injecting a reactive gas into the process chamber such that the reactive gas is activated by colliding with the plasma, the reactive gas including a hydrocarbon compound gas, and applying a bias power to the lower electrode to form a diamond-like carbon layer on the substrate from the activated reactive gas.

    摘要翻译： 使用感应耦合等离子体形成碳型硬掩模层的方法包括将基板装载到感应耦合等离子体（ICP）沉积装置的处理室中的下电极上，处理室包括上电极和下电极， 在所述处理室中产生等离子体，将反应性气体注入所述处理室，使得所述反应气体通过与所述等离子体碰撞而被激活，所述反应性气体包括烃类化合物气体，以及向所述下部电极施加偏置功率以形成 来自激活的反应气体的基底上的类金刚石碳层。