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    METHODS OF FORMING A CARBON TYPE HARD MASK LAYER USING INDUCED COUPLED PLASMA AND METHODS OF FORMING PATTERNS USING THE SAME
    1.
    发明申请
    METHODS OF FORMING A CARBON TYPE HARD MASK LAYER USING INDUCED COUPLED PLASMA AND METHODS OF FORMING PATTERNS USING THE SAME 审中-公开
    使用感应耦合等离子体形成碳类硬掩模层的方法和使用其形成图案的方法

    公开(公告)号：US20120276743A1

    公开(公告)日：2012-11-01

    申请号：US13456312

    申请日：2012-04-26

    申请人： Jai-Hyung Won ,  Se-Jun Park

    发明人： Jai-Hyung Won ,  Se-Jun Park

    IPC分类号： H01L21/311 ,  H01L21/314

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/76802 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11582 ,  H01L28/91

    摘要： A method of forming a carbon type hard mask layer using induced coupled plasma includes loading a substrate onto a lower electrode in a process chamber of an induced coupled plasma (ICP) deposition apparatus, the process chamber including an upper electrode and the lower electrode therein, generating a plasma in the process chamber, injecting a reactive gas into the process chamber such that the reactive gas is activated by colliding with the plasma, the reactive gas including a hydrocarbon compound gas, and applying a bias power to the lower electrode to form a diamond-like carbon layer on the substrate from the activated reactive gas.

    摘要翻译： 使用感应耦合等离子体形成碳型硬掩模层的方法包括将基板装载到感应耦合等离子体（ICP）沉积装置的处理室中的下电极上，处理室包括上电极和下电极， 在所述处理室中产生等离子体，将反应性气体注入所述处理室，使得所述反应气体通过与所述等离子体碰撞而被激活，所述反应性气体包括烃类化合物气体，以及向所述下部电极施加偏置功率以形成 来自激活的反应气体的基底上的类金刚石碳层。

    High density plasma chemical vapor deposition process
    2.
    发明授权
    High density plasma chemical vapor deposition process 失效
    高密度等离子体化学气相沉积工艺

    公开(公告)号：US07109132B2

    公开(公告)日：2006-09-19

    申请号：US10723517

    申请日：2003-11-26

    申请人： Jai-Hyung Won ,  Young-Kyou Park

    发明人： Jai-Hyung Won ,  Young-Kyou Park

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76804 ,  H01L21/76829 ,  H01L21/76837

    摘要： High-density plasma CVD processes with improved gap filling characteristics are provided. In one exemplary process, the process includes loading a semiconductor substrate into a process chamber. First main process gases, including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas and a hydrogen gas, are then injected into the process chamber. Thus, a high-density plasma is generated over the semiconductor substrate, and the semiconductor substrate is heated to a temperature in the range of about 550° C. to about 700° C. by the high-density plasma. Thus, a silicon oxide layer is formed to completely fill a gap region without any voids or defects in the semiconductor substrate. In addition, the first main process gases can be replaced with second main process gases including a silicon source gas, an oxygen gas, a nitrogen free chemical etching gas, a hydrogen gas and a helium gas.

    摘要翻译： 提供了具有改进的间隙填充特性的高密度等离子体CVD工艺。 在一个示例性过程中，该过程包括将半导体衬底加载到处理室中。 然后将第一主要工艺气体（包括硅源气体，氧气，无氮化学蚀刻气体和氢气）注入到处理室中。 因此，在半导体衬底上产生高密度等离子体，并通过高密度等离子体将半导体衬底加热到​​约550℃至约700℃范围内的温度。 因此，形成氧化硅层以完全填充间隙区域，而半导体衬​​底中没有任何空隙或缺陷。 此外，第一主工艺气体可以用包括硅源气体，氧气，无氮化学蚀刻气体，氢气和氦气的第二主要工艺气体替代。

    Plasma doping method and plasma doping apparatus for performing the same
    4.
    发明申请
    Plasma doping method and plasma doping apparatus for performing the same 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070087584A1

    公开(公告)日：2007-04-19

    申请号：US11542639

    申请日：2006-10-04

    申请人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    发明人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L29/76 ,  H01L29/94 ,  H01L31/00

    CPC分类号： H01J37/32422 ,  H01J37/32412 ,  H01J37/32577 ,  H01L21/2236

    摘要： In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.

    摘要翻译： 在使用等离子体将离子掺杂到诸如衬底的物体的方法中，可以在腔室中的第一和第二电极之间提供掺杂气体。 可以在第一和第二电极之间形成电场，以将掺杂气体激发到等离子体状态。 电场可以通过施加具有第一正电位的第一电力和具有第二正电位的第二电力而形成，第二正电位高于第一正电位。 电场可以通过阻止第二功率施加到第二电极而在方向上反转。 可以通过向基板引入电子来有效地中和衬底上的累积离子，从而可以防止产生电弧。

    Plasma doping method and plasma doping apparatus for performing the same
    6.
    发明申请
    Plasma doping method and plasma doping apparatus for performing the same 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070077366A1

    公开(公告)日：2007-04-05

    申请号：US11542468

    申请日：2006-10-04

    申请人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    发明人： Gyeong-Su Keum ,  Ji-Hyun Hur ,  Jai-Hyung Won ,  No-Hyun Huh ,  Jae-Joon Oh

    IPC分类号： C23C14/00 ,  H05H1/24 ,  G21G5/00

    CPC分类号： C23C14/48 ,  H01L21/2236

    摘要： A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.

    摘要翻译： 一种使用等离子体将离子掺杂到物体中的方法，包括在第一电极和第二电极之间提供掺杂气体，其中物体设置在第一和第二电极之间，向第一电极施加第一电力并将第二电极接地 将掺杂气体激发到等离子体状态，将离子引向待掺杂的物体，向第二电极施加第二功率并将第一电极接地，并计数朝向第二电极的离子的剂量;以及设备 执行相同。

    PECVD method of forming a tungsten silicide layer on a polysilicon layer
    7.
    发明授权
    PECVD method of forming a tungsten silicide layer on a polysilicon layer 失效
    在多晶硅层上形成硅化钨层的PECVD方法

    公开(公告)号：US06573180B2

    公开(公告)日：2003-06-03

    申请号：US10101776

    申请日：2002-03-21

    申请人： Jai Hyung Won

    发明人： Jai Hyung Won

    IPC分类号： H01L21443

    CPC分类号： C23C16/45512 ,  C23C16/42 ,  C23C16/4401

    摘要： A semiconductor substrate having a polysilicon layer is loaded into a process chamber of a plasma enhanced chemical vapor deposition device. A silicon source gas, a tungsten source gas, and a hydrogen compound gas for reducing a chlorine radical are introduced into the process chamber, to thereby deposit the tungsten silicide layer on the polysilicon layer. The chlorine radical of the silicon source gas is reduced into hydrogen chloride by the hydrogen compound gas and is removed together with an exhaust gas.

    摘要翻译： 具有多晶硅层的半导体衬底被装载到等离子体增强化学气相沉积装置的处理室中。 将硅源气体，钨源气体和用于还原氯自由基的氢化合物气体引入到处理室中，从而将硅化钨层沉积在多晶硅层上。 硅源气体的氯自由基通过氢化合物气体还原成氯化氢，并与废气一起除去。