公开(公告)号：US09277637B2

公开(公告)日：2016-03-01

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：USD697038S1

公开(公告)日：2014-01-07

申请号：US29416085

申请日：2012-03-19

申请人： Naoki Matsumoto ,  Jun Yoshikawa

设计人： Naoki Matsumoto ,  Jun Yoshikawa

公开(公告)号：US08920596B2

公开(公告)日：2014-12-30

申请号：US12862915

申请日：2010-08-25

申请人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

发明人： Naoki Mihara ,  Naoki Matsumoto ,  Jun Yoshikawa ,  Kazuo Murakami

IPC分类号： H01L21/3065 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/513 ,  H01J37/3244 ,  H01J37/32449

摘要： In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

摘要翻译： 在通过对引入到处理容器中的处理气体进行等离子体处理衬底的等离子体处理装置中，在处理容器的顶表面上形成引入处理气体的引入单元; 气体保持部，其通过供给通路收集从处理容器的外部供给的处理气体，并且在导入单元中形成有能够使气体保持部与处理容器内部连通的多个气体喷出孔 ; 在气体保持部的与供给通道的开口相对的位置处不形成气体喷出孔; 并且每个气体喷射孔的横截面具有扁平形状。

公开(公告)号：USD694791S1

公开(公告)日：2013-12-03

申请号：US29416088

申请日：2012-03-19

申请人： Naoki Matsumoto ,  Jun Yoshikawa

设计人： Naoki Matsumoto ,  Jun Yoshikawa

公开(公告)号：USD694790S1

公开(公告)日：2013-12-03

申请号：US29416082

申请日：2012-03-19

申请人： Naoki Matsumoto ,  Jun Yoshikawa

设计人： Naoki Matsumoto ,  Jun Yoshikawa

公开(公告)号：US09595425B2

公开(公告)日：2017-03-14

申请号：US13541940

申请日：2012-07-05

申请人： Naoki Matsumoto ,  Wataru Yoshikawa ,  Jun Yoshikawa ,  Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa

发明人： Naoki Matsumoto ,  Wataru Yoshikawa ,  Jun Yoshikawa ,  Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32238

摘要： An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.

摘要翻译： 天线，电介质窗，等离子体处理装置和等离子体处理方法能够提高基板表面的基板表面处理量的均匀性。 天线包括电介质窗16; 以及设置在电介质窗口16的一侧上的槽板20，具有多个狭槽133.介电窗口16具有由环形的第一凹部包围的平坦表面146; 以及形成在平坦表面146上以围绕平坦表面146的中心的多个第二凹部153.这里，平坦表面146形成在电介质窗口16的另一侧。当从厚度方向 槽板，每个第二凹槽153的中心位于槽板的每个槽133内。

公开(公告)号：US08988012B2

公开(公告)日：2015-03-24

申请号：US13638345

申请日：2011-03-24

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

发明人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

IPC分类号： H01J7/46 ,  H01J23/36 ,  H01J37/32 ,  H01J9/44

CPC分类号： H01J23/36 ,  H01J9/44 ,  H01J37/32192 ,  H01J37/32238

摘要： In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.

摘要翻译： 在用于等离子体处理装置的电介质窗41中，在电介质窗41的表面的外部区域，在电介质窗口41的产生等离子体的一侧的直径方向形成有第一电介质窗凹部47， 第一电介质窗凹部47以环状延伸，并且在电介质窗口41的厚度方向上向内具有锥形。多个第二电介质窗凹部53a至53g形成在电介质窗41的中心和 第一电介质窗凹部47，并且第二电介质窗凹部53a至53g中的每一个从电介质窗41的表面沿介质窗41的厚度方向向内凹陷。

公开(公告)号：USD645486S1

公开(公告)日：2011-09-20

申请号：US29369644

申请日：2010-09-10

申请人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

设计人： Wataru Yoshikawa ,  Naoki Matsumoto ,  Jun Yoshikawa

公开(公告)号：US20090215274A1

公开(公告)日：2009-08-27

申请号：US12392228

申请日：2009-02-25

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Tetsuya Nishizuka ,  Masaru Sasaki

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Tetsuya Nishizuka ,  Masaru Sasaki

IPC分类号： H01L21/3065 ,  C23C16/54 ,  H01L21/283

CPC分类号： H01L21/3065 ,  H01J37/32192 ,  H01J37/32568 ,  H01J2237/3343 ,  H01L21/31116 ,  H01L21/32137

摘要： The plasma processing apparatus includes a holding table disposed in a processing chamber, for holding thereon a target substrate; a dielectric plate disposed at a position facing the holding table, for introducing a microwave into the processing chamber; a plasma igniting unit for carrying out plasma ignition in a state in which an electric field is generated inside the processing chamber by the introduced microwave, thereby generating the plasma inside the processing chamber; and a control unit, which includes an elevating mechanism, for performing control operations to alter a distance between the holding table and the dielectric plate to a first distance, to drive the plasma igniting unit, to alter the distance between the holding table and the dielectric plate to a second distance different from the first distance, and to carry out the plasma process on the semiconductor substrate.

摘要翻译： 等离子体处理装置包括：保持台，设置在处理室中，用于保持目标基板; 电介质板，设置在面对所述保持台的位置，用于将微波引入所述处理室; 等离子体点火单元，用于在通过引入的微波在处理室内产生电场的状态下进行等离子体点火，从而在处理室内产生等离子体; 以及控制单元，其包括升降机构，用于执行将保持台和电介质板之间的距离改变到第一距离的控制操作，以驱动等离子体点火单元，以改变保持台和电介质之间的距离 并且在半导体衬底上进行等离子体处理。

公开(公告)号：US20090211708A1

公开(公告)日：2009-08-27

申请号：US12366907

申请日：2009-02-06

申请人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

发明人： Naoki Matsumoto ,  Jun Yoshikawa ,  Masaru Sasaki ,  Kazuyuki Kato ,  Masafumi Shikata ,  Shingo Takahashi

IPC分类号： H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.

摘要翻译： 提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。 等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及设置在电介质15的顶表面上的天线24，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25， 倾斜面16a，16b。