公开(公告)号：US20060263702A1

公开(公告)日：2006-11-23

申请号：US11432689

申请日：2006-05-11

申请人： Naoki Yamashita ,  Hisanobu Harada ,  Yasushi Fujii ,  Yoshinori Sakamoto

发明人： Naoki Yamashita ,  Hisanobu Harada ,  Yasushi Fujii ,  Yoshinori Sakamoto

IPC分类号： G03F1/00

CPC分类号： G03F7/11 ,  C08G77/60 ,  C09D183/16 ,  G03F7/091

摘要： A composition for forming an intermediate layer is provided, having improved etching resistance, prevention of reflection of short-wavelength light (ability to absorb short-wavelength light), and low-hardening properties. The composition for forming an intermediate layer includes a silylphenylene-based polymer containing an aromatic ring (A), having a repetitive unit represented by the following general formula (1): wherein, at least one of R1 and R2 is a cross-linking group, m and n are each an integer from 0 to 20, and 1 is an integer representing the number of repetitive units; and a solvent (C).

摘要翻译： 提供了一种用于形成中间层的组合物，具有改善的耐蚀刻性，防止短波长光的反射（吸收短波长光的能力）和低硬化性能。 用于形成中间层的组合物包括含有芳环（A）的甲硅烷基亚苯基聚合物，其具有由以下通式（1）表示的重复单元：其中R 1， 和R 2是交联基团，m和n各自为0至20的整数，1是表示重复单元数的整数; 和溶剂（C）。

公开(公告)号：US20080107971A1

公开(公告)日：2008-05-08

申请号：US11795521

申请日：2005-10-25

申请人： Yasushi Fujii ,  Mitsuo Hagihara ,  Yoshinori Sakamoto ,  Naoki Yamashita

发明人： Yasushi Fujii ,  Mitsuo Hagihara ,  Yoshinori Sakamoto ,  Naoki Yamashita

IPC分类号： G03F1/00

CPC分类号： G03F7/11 ,  C08L83/16 ,  C09D183/16 ,  G03F7/0752 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/32137 ,  H01L21/32139

摘要： A composition for forming an intermediate layer is provided, having improved etching resistance and prevention of reflection of short-wavelength light (ability to absorb short-wavelength light). The composition for forming an intermediate layer (hard mask) is constituted to include at least (A) a silylphenylene-based polymer having a repeating unit represented by the following general formula (1), and (B) a solvent. In the formula, R1 and R2 are each independently hydrogen or an alkyl group having 1 to 20 carbon atoms; and m and n are integers representing the number of repeating units.

摘要翻译： 提供了一种用于形成中间层的组合物，具有改善的耐蚀刻性和防止短波长光的反射（吸收短波长光的能力）。 用于形成中间层（硬掩模）的组合物至少包括（A）具有由以下通式（1）表示的重复单元的甲硅烷基亚苯基系聚合物和（B）溶剂。 在该式中，R 1和R 2各自独立地为氢或具有1至20个碳原子的烷基; m和n是表示重复单元数的整数。

公开(公告)号：US20090155546A1

公开(公告)日：2009-06-18

申请号：US12064342

申请日：2006-08-28

申请人： Naoki Yamashita ,  Kiyoshi Ishikawa ,  Yoshinori Sakamoto ,  Takuma Hojo

发明人： Naoki Yamashita ,  Kiyoshi Ishikawa ,  Yoshinori Sakamoto ,  Takuma Hojo

IPC分类号： B32B5/00 ,  G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0043 ,  B81C99/009 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/203 ,  Y10T428/24802

摘要： Disclosed are a film-forming composition which can form a pattern having an enhanced contrast by the action of uneven surface morphology produced after image development, and a method for forming a pattern and a three-dimensional mold using the composition. A composition comprising at least one of a hydrolysate and a condensation product of an alkoxy metal compound represented by the chemical formula (A), the composition additionally comprising a compound which can respond to at least one of light and heat to control the solubility of a finished film in a developing solution. R1n-M(OR2)4-n  (A) wherein M represents a silicon, a germanium, a titanium, a tantalum, an indium or a tin; R1 represents a hydrogen atom or a monovalent organic group; R2 represents a monovalent organic group; and n represents an integer of 1 to 3.

摘要翻译： 公开了一种成膜组合物，其可以通过图像显影后产生的不均匀表面形态的作用形成具有增强的对比度的图案，以及使用该组合物形成图案的方法和三维模具。 一种组合物，其包含由化学式（A）表示的烷氧基金属化合物的水解产物和缩合产物中的至少一种，所述组合物另外包含可以响应于光和热中的至少一种以控制溶解度的化合物 成品薄膜在开发中的解决方案。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R1n-M（OR2）4-n（A）<？in-line-formula description =“In-line Formulas”end =“尾”→其中M表示硅，锗，钛，钽，铟或锡; R1表示氢原子或一价有机基团; R2表示一价有机基团; n表示1〜3的整数。

公开(公告)号：US07153355B2

公开(公告)日：2006-12-26

申请号：US10964276

申请日：2004-10-13

申请人： Yoshinori Sakamoto ,  Naoki Yamashita

发明人： Yoshinori Sakamoto ,  Naoki Yamashita

IPC分类号： C09D183/04 ,  H01L21/473

CPC分类号： C09D183/04

摘要： To provide a silica film-forming material having a low dielectric constant and giving a film of less undergoing change in aging, a coating solution for forming a silica film includes a hydrolysis product of a mixture comprising: a tetraalkoxysilane; and at least one of a monoalkyltrialkoxysilane and a dialkyldialkoxysilane, and an ammonium salt represented by formula (I): wherein R1 represents an alkyl group having from 6 to 30 carbon atoms, R2 represents an alkyl group having from 1 to 5 carbon atoms, and X represents CH3COO, SO3H or OH.

摘要翻译： 为了提供具有低介电常数的二氧化硅成膜材料，并且产生较小的老化变化的膜，用于形成二氧化硅膜的涂布溶液包括混合物的水解产物，其包含：四烷氧基硅烷; 和至少一种单烷基三烷氧基硅烷和二烷基二烷氧基硅烷，以及由式（I）表示的铵盐：其中R 1表示具有6至30个碳原子的烷基，R 2， / SUP>表示具有1至5个碳原子的烷基，X表示CH 3 COO，SO 3 H或OH。

公开(公告)号：US20090263631A1

公开(公告)日：2009-10-22

申请号：US12064075

申请日：2006-08-28

申请人： Yoshinori Sakamoto ,  Naoki Yamashita ,  Kiyoshi Ishikawa

发明人： Yoshinori Sakamoto ,  Naoki Yamashita ,  Kiyoshi Ishikawa

IPC分类号： B32B3/10 ,  C08G77/14 ,  C08L83/06 ,  C08J3/28 ,  B32B38/06

CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y40/00 ,  C08G77/20 ,  C09D183/04 ,  G03F7/0002 ,  H01L21/0273 ,  Y10T156/1041 ,  Y10T428/24802

摘要： This invention provides a film forming composition for nanoimprinting, which has excellent resistance to etching with oxygen gas, can prevent the separation of a transfer pattern, can eliminate a problem of a holing time on a substrate, and is also excellent in transferability, and photosensitive resist, a nanostructure, a method for pattern formation using the same, and a program for realizing the method for pattern formation. The film forming composition for nanoimprinting comprises a polymeric silicon compound having the function of causing a photocuring reaction. Preferably, the polymeric silicon compound has a functional group cleavable as a result of response to electromagnetic waves and causes a curing reaction upon exposure to electromagnetic waves. More preferred are siloxane polymer compounds, silicon carbide polymer compounds, polysilane polymer compounds, and silazane polymer compounds, or any mixture thereof.

摘要翻译： 本发明提供一种纳米压印成膜用组合物，其具有优异的耐氧化蚀刻性，能够防止转印图案的分离，能够消除基板上的开孔时间的问题，并且转印性也优异，且感光性 抗蚀剂，纳米结构，使用其形成图案的方法，以及用于实现图案形成方法的程序。 用于纳米压印的成膜组合物包括具有引起光固化反应的功能的聚合物硅化合物。 优选地，聚合硅化合物具有由于对电磁波的响应而可切割的官能团，并且在暴露于电磁波时引起固化反应。 更优选硅氧烷聚合物化合物，碳化硅聚合物化合物，聚硅烷聚合物化合物和硅氮烷聚合物化合物，或其任何混合物。

公开(公告)号：US20050282021A1

公开(公告)日：2005-12-22

申请号：US11135342

申请日：2005-05-24

申请人： Naoki Yamashita ,  Yoshinori Sakamoto

发明人： Naoki Yamashita ,  Yoshinori Sakamoto

IPC分类号： B32B9/04 ,  C09D183/16 ,  H01L23/532

CPC分类号： C09D183/16 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a composition for forming a coating film comprising a carbosilane based polymer, and a coating film obtained from the composition. The composition for forming a coating film comprises: a carbosilane based polymer (A) having a repeating unit represented by the following general formula (1): wherein R1 and R2 are each independently hydrogen or alkyl groups having 1 to 20 carbon atoms and m is an integer of 0 to 20; and a solvent (B). The coating film according to the present invention is obtained by curing a coating layer formed from the composition for forming a coating film.

摘要翻译： 本发明提供了一种用于形成包含碳硅烷基聚合物的涂膜的组合物和由该组合物获得的涂膜。 用于形成涂膜的组合物包括：具有由以下通式（1）表示的重复单元的碳硅烷基聚合物（A）：其中R 1和R 2 各自独立地为氢或碳原子数1〜20的烷基，m为0〜20的整数， 和溶剂（B）。 根据本发明的涂膜通过固化由用于形成涂膜的组合物形成的涂层而获得。

公开(公告)号：US20050267277A1

公开(公告)日：2005-12-01

申请号：US11131205

申请日：2005-05-18

申请人： Masaru Takahama ,  Yoshinori Sakamoto ,  Takeshi Tanaka ,  Naoki Yamashita

发明人： Masaru Takahama ,  Yoshinori Sakamoto ,  Takeshi Tanaka ,  Naoki Yamashita

IPC分类号： G03F7/11 ,  C08G77/26 ,  G03F7/004 ,  G03F7/075 ,  H01L21/027

CPC分类号： G03F7/091 ,  C09D183/04 ,  G03F7/0752 ,  C08L83/00

摘要： The composition for forming an anti-reflective coating film of the present invention has a hard-volatility and high coating performance. In particular, when the 193 nm ArF excimer laser beam source is applied, the composition exhibits a higher etching property. Therefore, the composition is suitably for forming an anti-reflective coating film with no voids and for a method of forming resist patterns using the composition. The composition for forming an anti-reflective coating film comprising; (A) a hard-volatility light absorbing compound, (B) siloxanepolymer, and (C) a solvent.

摘要翻译： 用于形成本发明的抗反射涂膜的组合物具有硬挥发性和高涂层性能。 特别地，当应用193nm ArF准分子激光束源时，组合物表现出较高的蚀刻性能。 因此，该组合物适合用于形成无空隙的抗反射涂膜和使用该组合物形成抗蚀剂图案的方法。 用于形成抗反射涂膜的组合物，包括： （A）硬挥发性光吸收化合物，（B）硅氧烷聚合物和（C）溶剂。

公开(公告)号：US20050092206A1

公开(公告)日：2005-05-05

申请号：US10964276

申请日：2004-10-13

申请人： Yoshinori Sakamoto ,  Naoki Yamashita

发明人： Yoshinori Sakamoto ,  Naoki Yamashita

IPC分类号： C09D183/04 ,  B05C11/08 ,  C08H1/00 ,  C09D5/25 ,  C09D7/12 ,  H01L21/316 ,  C07G1/00

CPC分类号： C09D183/04

摘要： To provide a silica film-forming material having a low dielectric constant and giving a film of less undergoing change in aging, a coating solution for forming a silica film includes a hydrolysis product of a mixture comprising: a tetraalkoxysilane; and at least one of a monoalkyltrialkoxysilane and a dialkyldialkoxysilane, and an ammonium salt represented by formula (I): wherein R1 represents an alkyl group having from 6 to 30 carbon atoms, R2 represents an alkyl group having from 1 to 5 carbon atoms, and X represents CH3COO, SO3H or OH.

摘要翻译： 为了提供具有低介电常数的二氧化硅成膜材料，并且产生较小的老化变化的膜，用于形成二氧化硅膜的涂布溶液包括混合物的水解产物，其包含：四烷氧基硅烷; 和至少一种单烷基三烷氧基硅烷和二烷基二烷氧基硅烷，以及由式（I）表示的铵盐：其中R 1表示具有6至30个碳原子的烷基，R 2， / SUP>表示具有1至5个碳原子的烷基，X表示CH 3 COO，SO 3 H或OH。

公开(公告)号：US20060077718A1

公开(公告)日：2006-04-13

申请号：US11284949

申请日：2005-11-23

申请人： Yoshinori Sakamoto ,  Tatsuya Bando

发明人： Yoshinori Sakamoto ,  Tatsuya Bando

IPC分类号： G11C16/04

CPC分类号： G11C16/3477 ,  G11C16/16

摘要： The number of rewrites for memory cells is to be increased, and the reliability of data reading to be substantially improved. Where data in memory cells are to be erased, the switching of an erase voltage to be applied to the control gate of each memory cell, while switching from one to another of voltages of any different levels, as the control gate voltage (=soft erase voltage) is accomplished according to the quantity of electric charges accumulated at the floating gate of each memory cell so as to keep substantially constant the voltage applied to the tunnel film of the memory cell. Upon acceptance of an erase command, a CPU supplies a control signal to a decoder, and on the basis of the resultant decode signal an erase voltage switching circuit generates a soft erase voltage of a certain level. After that, while switching from one to another of soft erase voltages differing in level, data in the memory cell are erased. Upon completion of erasing data in the memory cell, erase verification is carried out.

公开(公告)号：US06409844B1

公开(公告)日：2002-06-25

申请号：US09623218

申请日：2000-08-30

申请人： Naohiro Shikata ,  Yoshiaki Kondou ,  Yukio Nishikawa ,  Yoshihiko Nishizawa ,  Yoshinori Sakamoto ,  Takeshi Fujiwaki

发明人： Naohiro Shikata ,  Yoshiaki Kondou ,  Yukio Nishikawa ,  Yoshihiko Nishizawa ,  Yoshinori Sakamoto ,  Takeshi Fujiwaki

IPC分类号： C23C2207

CPC分类号： C23C22/60

摘要： An article of magnesium or its alloy having a surface layer containing magnesium condensed phosphate and magnesium phosphate, which can be produced by treating an article of magnesium or its alloy with a treating liquid containing 1,000 to 20,000 ppm of alkaline metal ions, 1,000 to 50,000 ppm of condensed phosphate ions, and 100 to 20,000 ppm of borate ions, and having pH of at least 8. The treated article has good corrosion resistance, and a coating can be formed on the surface of the article with good adhesion.

摘要翻译： 一种镁或其合金制品，其具有包含镁缩合磷酸盐和磷酸镁的表面层，其可以通过用含有1,000至20,000ppm碱金属离子的处理液处理镁或其合金制品，其为1,000至50,000ppm 的浓缩磷酸根离子，100〜20,000ppm的硼酸根离子，pH值在8以上。处理过的制品具有良好的耐腐蚀性，可以在物品的表面形成具有良好粘附性的涂层。