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12 条记录 (耗时 0.02 秒)

    Light-emitting module
    2.
    发明申请
    Light-emitting module 有权
    发光模块

    公开(公告)号：US20070019960A1

    公开(公告)日：2007-01-25

    申请号：US11319702

    申请日：2005-12-29

    申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

    发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

    IPC分类号： H04B10/00

    CPC分类号： H04B10/0799 ,  G02B6/32 ,  G02B6/4206 ,  H04B10/114

    摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

    摘要翻译： 一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜 保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束 从半导体发光元件。 半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
    3.
    发明申请
    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device 有权
    具有改进的高频特性的VCSEL，半导体激光器件，模块和光传输器件

    公开(公告)号：US20080043793A1

    公开(公告)日：2008-02-21

    申请号：US11706597

    申请日：2007-02-15

    申请人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    发明人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    IPC分类号： H01S5/183

    CPC分类号： H01S5/18311 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01L2924/00014

    摘要： A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.

    摘要翻译： 包括基板的VCSEL，在基板上形成的第一导电型的第一半导体层，形成在第一半导体层上的有源层，形成在有源层上的第二导电型的第二半导体层，第一电极 形成在基板的主表面上并与第一半导体层电连接的布线，形成在基板的主表面上并与第二半导体层电连接的第二电极布线，以及形成在基板上用于发射的发光部分 激光灯。 第一电极布线与第一半导体层电连接的接触部分形成在等于或大于pi / 2弧度的范围内，并且以pi弧度为单位，以发光部分为中心。

    Vertical cavity surface emitting laser diode and process for producing the same
    5.
    发明授权
    Vertical cavity surface emitting laser diode and process for producing the same 有权
    垂直腔表面发射激光二极管及其制造方法

    公开(公告)号：US07366218B2

    公开(公告)日：2008-04-29

    申请号：US11159192

    申请日：2005-06-23

    申请人： Naotaka Mukoyama ,  Nobuaki Ueki

    发明人： Naotaka Mukoyama ,  Nobuaki Ueki

    IPC分类号： H01S5/00

    CPC分类号： H01S5/02288 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/423 ,  H01S2301/18

    摘要： A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

    摘要翻译： 垂直腔表面发射激光二极管包括下半导体反射器，有源区，构成具有下半导体反射器的谐振器的上半导体反射器，金属部分形成在上半导体反射器上，金属部分具有限定输出区域的第一孔 在激活区域中产生的激光，以及设置在金属部件和下半导体反射器之间的限光区域，并具有限定激光发射区域的第二孔。 上半导体反射器包括具有朝向下半导体反射器的凸表面的透镜介质。

    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
    7.
    发明授权
    VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device 有权
    具有改进的高频特性的VCSEL，半导体激光器件，模块和光传输器件

    公开(公告)号：US07496123B2

    公开(公告)日：2009-02-24

    申请号：US11706597

    申请日：2007-02-15

    申请人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    发明人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S3/097

    CPC分类号： H01S5/18311 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01L2924/00014

    摘要： A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.

    摘要翻译： 包括基板的VCSEL，在基板上形成的第一导电型的第一半导体层，形成在第一半导体层上的有源层，形成在有源层上的第二导电型的第二半导体层，第一电极 形成在基板的主表面上并与第一半导体层电连接的布线，形成在基板的主表面上并与第二半导体层电连接的第二电极布线，以及形成在基板上用于发射的发光部分 激光灯。 第一电极布线与第一半导体层电连接的接触部分形成在等于或大于pi / 2弧度的范围内，并且以pi弧度为单位，以发光部分为中心。

    Image-forming process and image-forming apparatus
    9.
    发明授权
    Image-forming process and image-forming apparatus 失效
    图像形成处理和图像形成装置

    公开(公告)号：US06468707B1

    公开(公告)日：2002-10-22

    申请号：US09576548

    申请日：2000-05-24

    申请人： Hiroyoshi Okuno ,  Akira Matsumoto ,  Tsutomu Kubo ,  Yusaku Shibuya ,  Yutaka Sugizaki ,  Masahiro Okita ,  Naotaka Mukoyama

    发明人： Hiroyoshi Okuno ,  Akira Matsumoto ,  Tsutomu Kubo ,  Yusaku Shibuya ,  Yutaka Sugizaki ,  Masahiro Okita ,  Naotaka Mukoyama

    IPC分类号： G03G1314

    CPC分类号： G03G9/097 ,  G03G9/09708 ,  G03G13/08

    摘要： An image-forming process capable of keeping a high transfer efficiency for a long period of time, reducing the amount of the toner to be recovered and wasted and obtaining stabilized images without causing image quality defects such as density lowering, density unevenness, ghosts, fog, etc., wherein inorganic fine particles contained in a toner transfer from the toner to an electrostatic latent image holder surface and attach thereto, the attached amount of the inorganic fine particles to the electrostatic latent image holder surface is from 1 to 20% as the average occupied area ratio (CAV) in the electrostatic latent image holder surface, and the difference (CMAX−CMIN) of the maximum occupied area ratio and the minimum occupied area ratio of the attached inorganic fine particles in the electrostatic latent image holder surface is not larger than about 5%.

    摘要翻译： 能够长期保持高转印效率的图像形成工艺，减少要回收和浪费的调色剂的量并获得稳定的图像，而不会引起诸如密度降低，浓度不均匀，重影，雾的图像​​质量缺陷 等等，其中包含在调色剂中的调色剂中的无机细颗粒从静电潜像保持器表面转移到静电潜像保持器表面并附着在其上，无机细颗粒附着到静电潜像保持器表面的量为1至20％ 静电潜像保持体表面的平均占据面积比（CAV）和静电潜像保持体表面中附着的无机微粒的最大占据面积比和最小占据面积比的差（CMAX-CMIN） 大于约5％。