公开(公告)号：US06482668B2

公开(公告)日：2002-11-19

申请号：US09260044

申请日：1999-03-02

申请人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

发明人： Naoto Okada ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/1824 ,  H01L31/1816 ,  Y02E10/545 ,  Y02P70/521

摘要： In the step of forming a microcrystalline i-type semiconductor layer by high-frequency plasma CVD, wherein an area of the parallel-plate electrode is represented by S; a width of the discharge space in its direction perpendicular to the transport direction of the belt-like substrate, by Ws; a width of a region formed by the parallel-plate electrode together with its surrounding insulating region, in its direction perpendicular to the transport direction of the belt-like substrate, by Wc; a width of the belt-like substrate in the direction perpendicular to its transport, by Wk; a distance between the parallel-plate electrode and the belt-like substrate, by h; a power density at which crystal fraction begins to saturate at predetermined substrate temperature, material gas flow rate and pressure, by Pd; and a high-frequency power, by P, 2h/(Ws−Wc)≧2.5, (Ws/h)×2(Ws−Wk)/[4h+(Ws−Wc) ]≧10, and P≧(10/8)×Pd×S. A microcrystalline semiconductor layer having lower characteristics distribution in the width direction of a belt-like substrate result, and photovoltaic devices having uniform photoelectric conversion efficiency can be mass-produced by a roll-to-roll system.

摘要翻译： 在通过高频等离子体CVD形成微晶i型半导体层的步骤中，平行板电极的面积由S表示; 放电空间在与带状衬底的输送方向垂直的方向上的宽度Ws; 由平行板电极与其周围的绝缘区域在垂直于带状衬底的输送方向的方向上形成的区域的宽度为Wc; 带状基板在与其运输方向垂直的方向上的宽度W k; 平行板电极和带状衬底之间的距离h; 通过Pd在晶体部分在预定的衬底温度，材料气体流速和压力下开始饱和的功率密度; 和高频功率，通过P，在带状衬底的宽度方向上具有较低特性分布的微晶半导体层，并且可以通过卷对卷大规模生产具有均匀光电转换效率的光电器件 系统。

公开(公告)号：US06576061B1

公开(公告)日：2003-06-10

申请号：US09469797

申请日：1999-12-22

申请人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Koichiro Moriyama ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Tadashi Hori ,  Naoto Okada ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L21/67173 ,  H01L21/67236 ,  H01L21/67253 ,  H01L21/6776

摘要： A substrate-processing method comprising transporting a substrate to pass through a plurality of processing spaces communicated with each other while processing said substrate in each processing space, characterized in that based on an inner pressure of (a) one of said plurality of processing spaces, said inner pressure of said processing space (a) and an inner pressure of (b) at least one of the processing spaces arranged before or after said processing space (a) are controlled. A substrate-processing apparatus comprising a plurality of processing spaces, a substrate transportation means for transporting a substrate to pass through said plurality of processing spaces while said substrate being processed in each processing space, and a pressure gage of measuring an inner pressure of (a) one of said plurality of processing spaces, characterized in that said substrate-processing apparatus has a control unit for controlling the inner pressure of said processing space (a) and that of (b) at least one of the processing spaces arranged before or after said processing space (a) based on information obtained from said pressure gage.

摘要翻译： 一种基板处理方法，包括在每个处理空间中处理所述基板的同时传送基板以通过彼此连通的多个处理空间，其特征在于，基于所述多个处理空间中的一个的内部压力， 所述处理空间（a）的所述内部压力和所述处理空间（a）之前或之后布置的处理空间中的至少一个处理空间（b）的内部压力被控制。1。一种基板处理设备，包括多个处理空间， 基板传送装置，用于在每个处理空间中处理所述基板的同时传送基板以通过所述多个处理空间;以及压力计，测量所述多个处理空间中的一个处理空间中的（a）的内部压力，其特征在于， 所述基板处理装置具有用于控制所述处理空间（a）和（b）的内部压力的控制单元 基于从所述压力计获得的信息，在所述处理空间（a）之前或之后布置的处理空间中的至少一个。

公开(公告)号：US06261862B1

公开(公告)日：2001-07-17

申请号：US09358930

申请日：1999-07-23

申请人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

发明人： Tadashi Hori ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda ,  Hiroyuki Ozaki

IPC分类号： H01L2100

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A process is provided for producing a photovoltaic element which has at least one pin junction, and a buffering semiconductor layer constituted of plural sublayers between an n-type layer and an i-type layer and/or between an i-type layer and a p-type layer, through production steps of introducing a source material gas into an electric discharge space in a reaction chamber, and decomposing the source material gas by plasma discharge to form a non-monocrystalline semiconductor layer. In the process, in electric discharge generation for formation of at least one of the sublayers, the polarity of the electrode confronting the substrate for formation of a first sublayer and the polarity of the electrode confronting the substrate for formation of a second sublayer adjacent to the first sublayer is made different from each other, or the potential of one of the electrodes is set at zero volt. Thereby, diffusion of the dopant from the p-type layer or the n-type layer into the i-type layer is prevented effectively. The produced photovoltaic element is improved in the output properties, the open-circuit voltage, and the fill factor, and these properties deteriorate less.

摘要翻译： 提供了一种制造具有至少一个pin结的光电元件的工艺，以及在n型层和i型层之间和/或i型层与p型之间由多个子层构成的缓冲半导体层 型层，通过将源材料气体引入反应室中的放电空间的生产步骤，以及通过等离子体放电来分解原料气体以形成非单晶半导体层。 在该过程中，在用于形成至少一个子层的放电产生中，与用于形成第一子层的衬底相对的电极的极性和与衬底相对的用于形成邻近第二子层的第二子层的电极的极性 使第一子层彼此不同，或者将一个电极的电位设置为零伏。 由此，有效地防止了掺杂剂从p型层或n型层向i型层的扩散。 所产生的光电元件的输出性能，开路电压和填充因子得到改善，并且这些特性劣化较少。

公开(公告)号：US06153823A

公开(公告)日：2000-11-28

申请号：US37825

申请日：1998-03-11

申请人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

发明人： Atsushi Shiozaki ,  Keishi Saito ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/048 ,  H01L31/076 ,  H01L31/20 ,  H02J7/35 ,  H01L25/00

CPC分类号： H02J7/35 ,  B32B17/04 ,  B32B17/10788 ,  H01L31/048 ,  H01L31/076 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/548 ,  Y10S136/293

摘要： A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

摘要翻译： 提供一种光电转换元件，其包括基板，形成在基板上的非单晶半导体的多个半导体结以及覆盖半导体结的表面材料。 半导体结具有彼此不同的各自的吸收光谱，并且各自的光劣化率彼此不同。 当没有表面材料存在时，由劣化率最小的半导体结产生的光电流大于具有最大劣化率的半导体结的光电流，并且当存在时，表面材料在相当于一部分的范围内吸收光 具有最小劣化率的半导体结的吸收光谱，使得由劣化率最小的半导体结产生的光电流变得小于具有最大劣化率的半导体结的光电流。

公开(公告)号：US06667240B2

公开(公告)日：2003-12-23

申请号：US09800724

申请日：2001-03-08

申请人： Hiroyuki Ozaki ,  Masahiro Kanai ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda

发明人： Hiroyuki Ozaki ,  Masahiro Kanai ,  Naoto Okada ,  Koichiro Moriyama ,  Hiroshi Shimoda

IPC分类号： H01L21311

CPC分类号： C23C16/511 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32761 ,  H05H1/46 ,  H05H2001/4622

摘要： A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitudinal direction, wherein an opening of a discharge container is adjusted with an opening adjusting plate having a shape set so as to reduce ununiformity of a deposited film thickness in a width direction of the substrate on the basis of a measurement of a deposition rate distribution. Accordingly, there is provided a method and an apparatus for forming a deposited film which are capable of producing a photovoltaic element without ununiformity in characteristics by depositing semiconductor layers without ununiformity in thickness and quality.

公开(公告)号：US20090117807A1

公开(公告)日：2009-05-07

申请号：US12175079

申请日：2008-07-17

申请人： Yoshinori Uno ,  Naoto Okada

发明人： Yoshinori Uno ,  Naoto Okada

IPC分类号： H01L51/56

CPC分类号： H01L27/3269 ,  G09G3/14 ,  G09G3/3216 ,  G09G3/3225 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2320/0693 ,  G09G2360/145 ,  H01L2251/562

摘要： Provided is a method of manufacturing an organic electroluminescence display apparatus including an organic electroluminescence device formed on a substrate, the organic electroluminescence device including a first electrode and a second electrode, at least one of which is transparent, and an organic emission layer formed between the first electrode and the second electrode, the organic emission layer being for emitting light by application of a current. Aging is performed until a rate of change in current efficiency of the organic electroluminescence device per unit time at a predetermined luminance or the amount of change per unit time in the rate of change in current efficiency of the organic electroluminescence device per unit time falls within a predetermined range.

摘要翻译： 提供一种制造有机电致发光显示装置的方法，所述有机电致发光显示装置包括形成在基板上的有机电致发光器件，所述有机电致发光器件包括第一电极和第二电极，所述第一电极和第二电极中的至少一个是透明的， 第一电极和第二电极，有机发射层用于通过施加电流来发光。 进行老化，直到每单位时间内的有机电致发光元件的电流效率以规定的亮度或单位时间的变化量为单位时间内的有机电致发光元件的电流效率的变化率落在 预定范围。

公开(公告)号：US06911352B2

公开(公告)日：2005-06-28

申请号：US10626656

申请日：2003-07-25

申请人： Takeshi Takada ,  Naoto Okada

发明人： Takeshi Takada ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/31 ,  H01L27/14 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/50

摘要： A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a method of manufacturing a semiconductor device including the steps of forming a first semiconductor layer on a substrate, forming a first transparent electroconductive layer on the first semiconductor layer, and forming a second semiconductor layer on the first transparent electroconductive layer, the method further including executing passivation treatment on defects in the first semiconductor layer before the formation of the second semiconductor layer.

摘要翻译： 通过利用半导体器件的制造方法，能够以高产率制造能够抑制流过第一半导体层的缺陷区域的短路电流的半导体器件，其包括以下步骤：在第一半导体层上形成第一半导体层 在所述第一半导体层上形成第一透明导电层，以及在所述第一透明导电层上形成第二半导体层，所述方法还包括在形成所述第二半导体层之前对所述第一半导体层中的缺陷执行钝化处理。

公开(公告)号：US06930025B2

公开(公告)日：2005-08-16

申请号：US10059168

申请日：2002-01-31

申请人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

发明人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

IPC分类号： C23C14/02 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/18 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1884 ,  C23C14/024 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/056 ,  Y02E10/52

摘要： In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2≦(second film formation rate)/(first film formation rate)≦100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.

摘要翻译： 在基板上形成具有结晶性的透明导电膜的方法中，该方法包括以第一成膜速度形成薄膜的第一步骤和以第二薄膜形成速率形成薄膜的第二步骤 各步骤中的成膜速度满足：<？in-line-formula description =“In-line formula”end =“lead”？> 2 <=（第二成膜速率）/（第一成膜速率）<= 100 ; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其提供了一种通过有利于成本降低的沉积工艺制造透明导电膜的方法，其可以在短时间内形成 透明导电膜具有不均匀的表面轮廓，具有高的光限制效应，并且当应用于形成光伏器件的多层结构时，可以实现光伏性能的提高并且获得高的批量生产率。

公开(公告)号：US06500291B1

公开(公告)日：2002-12-31

申请号：US09786868

申请日：2001-03-12

申请人： Naoto Okada ,  Toshikatu Shimazaki ,  Takeshi Yoshida ,  Yoshitaka Minami ,  Hiroshi Yamazaki

发明人： Naoto Okada ,  Toshikatu Shimazaki ,  Takeshi Yoshida ,  Yoshitaka Minami ,  Hiroshi Yamazaki

IPC分类号： B44C1165

CPC分类号： B32B38/10 ,  B32B37/22 ,  B32B38/0004 ,  B32B2309/06 ,  B32B2457/08 ,  G03F7/16 ,  Y10T156/1052 ,  Y10T156/1712 ,  Y10T156/1741 ,  Y10T156/1911

摘要： A lamination device for performing a lamination method for a dry film resist as a transfer layer, comprising a substrate transport part (15), a substrate preheating part (8), a lamination part (9) and, (10), an inter-substrate film processing part (3), a film feed part (2), a film accumulation part (4), a base film continuous peeling part (12, 13), and a cover film continuous peeling part (5), wherein a lamination is carried out by a pair of lamination rolls (9) and (10), part (15) being transport rolls, a base film is peeled off from a substrate after lamination, a guide roll (12) for peeling off the base film is located forward of the lamination rolls in the transport direction of the substrate, and the guide roll is free to move vertically or laterally, whereby an angle between a substrate surface and the base film being wound up, i.e., the peeling angle of the base film can be changed to any angle.

摘要翻译： 一种用于进行作为转印层的干膜抗蚀剂层叠方法的层叠装置，包括基板输送部（15），基板预热部（8），层叠部（9）和（10） 基板膜加工部（3），膜输送部（2），膜积存部（4），基膜连续剥离部（12,13）以及覆膜连续剥离部（5） 由一对层压辊（9）和（10），作为输送辊的部分（15）进行，层压后从基板剥离基膜，用于剥离基膜的引导辊（12）是 位于基板的输送方向上的层叠辊的前方，导向辊可以自由地垂直或横向移动，由此基板表面和基膜之间的角度被卷起，即基膜的剥离角度 可以改变任何角度。

公开(公告)号：US08382078B2

公开(公告)日：2013-02-26

申请号：US12594556

申请日：2007-06-14

申请人： Naoto Okada ,  Takuya Kishida

发明人： Naoto Okada ,  Takuya Kishida

IPC分类号： F16M1/00 ,  B60G13/00

CPC分类号： F16F1/44 ,  F16F1/373

摘要： To provide a bump stopper (1) having constricted parts (2A, 2B) in the circumferential surface and exhibiting buffering action by deforming resiliently when an annular distal end portion (3) collides against a partner member (61) in a state that a bump stopper central axis (0) is inclined to a collision surface (62), without sliding on the collision surface (62), thereby generation of noise being suppressed, the distal end portion (3) has a outside diameter and an inside diameter which expand toward the end, a diameter d1 at a collision start point (4) at the most distal end of the inner diameter surface is set substantially equal to or larger than the outside diameter d2 of the constricted part (2A) located just above it, and the distal end portion (3) deforms to tilt further to the outer diameter side through action of moment at the time of collision.

摘要翻译： 为了提供在圆周表面上具有缩颈部分（2A，2B）的凸块止动器（1），并且当环形顶端部分（3）在凸起 止动器中心轴线（0）相对于碰撞面（62）倾斜，而不会在碰撞面（62）上滑动，从而抑制噪音的产生，所以前端部（3）的外径和内径扩大 向内端面的最远端的碰撞起始点（4）的直径d1设定为位于正上方的收缩部（2A）的外径d2以上， 远端部分3通过碰撞时的力矩而进一步向外径侧倾斜。