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    Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor
    1.
    发明授权
    Spin valve thin-film magnetic device having free magnetic layer in ferrimagnetic state and manufacturing method therefor 失效
    具有亚铁磁性状态的自由磁性层的旋转阀薄膜磁性装置及其制造方法

    公开(公告)号：US06639762B2

    公开(公告)日：2003-10-28

    申请号：US09764003

    申请日：2001-01-17

    申请人： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

    发明人： Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide ,  Fumihito Koike ,  Naoya Hasegawa

    IPC分类号： G11B533

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3948 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/302 ,  Y10T29/49034 ,  Y10T29/49043

    摘要： A spin valve thin-film magnetic device is provided, in which the asymmetry can be reduced. The spin valve thin-film magnetic device comprises a free magnetic layer and a first and a second fixed magnetic layer, which are provided respectively at each side of the free magnetic layer in the thickness direction thereof. In the spin valve thin-film magnetic device, the free magnetic layer is composed of a first and a second ferromagnetic free layer, in which the entire free magnetic layer is in a ferrimagnetic state, the first fixed magnetic layer is composed of a first and a second pinned ferromagnetic layer, in which the entire first fixed magnetic layer is in a ferrimagnetic state, and the second fixed magnetic layer is composed of a third and a fourth pinned ferromagnetic layer, in which the entire second fixed magnetic layer is in a ferrimagnetic state. In addition, magnetization directions of the second and the third pinned ferromagnetic layers, which are closer to the free magnetic layer, are antiparallel to each other.

    摘要翻译： 提供了一种自旋阀薄膜磁性器件，其中可以减小不对称性。 自旋阀薄膜磁性装置包括自由磁性层和第一和第二固定磁性层，它们分别设置在自由磁性层的厚度方向的每一侧。 在自旋阀薄膜磁性器件中，自由磁性层由第一和第二铁磁性自由层构成，其中整个自由磁性层处于亚铁磁状态，第一固定磁性层由第一和第二铁磁性层组成， 第二固定铁磁层，其中整个第一固定磁性层处于亚铁磁状态，并且第二固定磁性层由第三和第四钉扎铁磁层构成，其中整个第二固定磁性层处于铁磁性 州。 此外，更靠近自由磁性层的第二和第三固定铁磁层的磁化方向彼此反平行。

    Spin-valve magnetoresistive element and method for making the same
    2.
    发明授权
    Spin-valve magnetoresistive element and method for making the same 失效
    旋转阀磁阻元件及其制造方法

    公开(公告)号：US06500570B2

    公开(公告)日：2002-12-31

    申请号：US09730955

    申请日：2000-12-05

    申请人： Naoya Hasegawa ,  Fumihito Koike ,  Yosuke Ide

    发明人： Naoya Hasegawa ,  Fumihito Koike ,  Yosuke Ide

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T428/1121

    摘要： A spin-valve magnetoresistive element includes an antiferromagnetic layer, a first pinned magnetic layer, a nonmagnetic interlayer, a second pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer, a pair of longitudinal biasing layers, and a pair of lead layers. When a detecting current is applied from the lead layers, the magnetization vector of the free magnetic layer is aligned in a direction intersecting the magnetization vector of the second pinned magnetic layer, and the magnetization vector of the second pinned magnetic layer is tilted by an angle &thgr; from the normal of a track width direction toward a direction opposite to a longitudinal biasing magnetic field, in order to reduce asymmetry of the output.

    摘要翻译： 自旋阀磁阻元件包括反铁磁层，第一钉扎磁性层，非磁性中间层，第二钉扎磁性层，非磁性导电层，自由磁性层，一对纵向偏置层和一对引线层 。 当从引线层施加检测电流时，自由磁性层的磁化矢量在与第二被钉扎磁性层的磁化矢量交叉的方向上对准，并且第二被钉扎磁性层的磁化矢量倾斜一定角度 θ从轨道宽度方向的法线朝向与纵向偏置磁场相反的方向，以减小输出的不对称性。

    Spin-valve element having fixed layer containing nano-oxide layer
    4.
    发明申请
    Spin-valve element having fixed layer containing nano-oxide layer 失效
    旋转阀元件具有含有纳米氧化物层的固定层

    公开(公告)号：US20050157435A1

    公开(公告)日：2005-07-21

    申请号：US11034386

    申请日：2005-01-12

    申请人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    发明人： Kazuaki Ikarashi ,  Naoya Hasegawa ,  Fumihito Koike ,  Eiji Umetsu

    IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B2005/3996

    摘要： A nonmagnetic material-noncontact layer forming a fixed magnetic layer is formed using CoFe, a nonmagnetic material-contact layer is formed using Co, and an NOL (Nano-Oxide Layer) is provided between the nonmagnetic material-noncontact layer and the nonmagnetic material-contact layer. In addition, the average film thickness of the nonmagnetic material-contact layer is set in the range of 16 to 19 Å. Accordingly, compared to a three-layered structure composed of CoFe, an NOL, and CoFe or a three-layered structure composed of Co, an NOL, and Co, which has been conventionally used, the rate (ΔR/R) of change in resistance and the unidirectional exchange bias magnetic field (Hex*) can both be improved.

    摘要翻译： 使用CoFe形成形成固定磁性层的非磁性材料非接触层，使用Co形成非磁性材料接触层，在非磁性材料 - 非接触层和非磁性材料 - 非接触层之间设置NOL（纳米氧化物层） 接触层。 此外，非磁性材料接触层的平均膜厚设定在16〜19的范围内。 因此，与通常使用的CoFe，NOL，CoFe或由Co，NOL，Co构成的三层结构体构成的三层结构相比，变化率（ΔR/ R） 电阻和单向交流偏置磁场（Hex *）都可以提高。

    Giant magnetoresistive material film, method of producing the same and magnetic head using the same
    6.
    发明授权
    Giant magnetoresistive material film, method of producing the same and magnetic head using the same 失效
    巨磁阻材料膜，其制造方法和使用其的磁头

    公开(公告)号：US06387550B1

    公开(公告)日：2002-05-14

    申请号：US09547705

    申请日：2000-04-11

    申请人： Fumihito Koike ,  Naoya Hasegawa

    发明人： Fumihito Koike ,  Naoya Hasegawa

    IPC分类号： G11B566

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23C14/085 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3268 ,  H01L43/10 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1193 ,  Y10T428/12958 ,  Y10T428/26 ,  Y10T428/265

    摘要： A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of &agr;-Fe2O3 provided adjacent thereto and having a thickness of 200 to 1000 Å so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in magnetic resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.

    摘要翻译： 巨磁阻材料薄膜包括NiFe合金或NiFeCo合金的至少两个铁磁层，它们通过Au，Ag，Cu或Cr的非磁性层形成在衬底上，其中至少一个铁磁层的磁化被固定 通过与其相邻设置的厚度为200〜1000的α-Fe2O3矫顽力增加层，以增加铁磁层的矫顽力，另一个铁磁层具有自由磁化，从而产生磁阻的变化 在低磁场下。 本发明还提供了制造巨磁阻材料膜的方法和设置有巨磁阻材料膜的磁头。