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1.发明授权公开(公告)号：US06282069B1
公开(公告)日：2001-08-28
申请号：US09062027
申请日：1998-04-17
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , G11C11/1675 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49055
摘要： A second antiferromagnetic layer formed on a free magnetic layer has a blocking temperature lower than that of a first antiferromagnetic layer. The exchange anisotropic magnetic field between the free magnetic layer and the second antiferromagnetic layer is smaller than the exchange anisotropic magnetic field between the first antiferromagnetic layer and the pinned magnetic layer. By applying an annealing treatment utilizing the blocking temperature difference between the first and second antiferromagnetic layers, the magnetization direction and the strength of the pinned magnetic layer and the free magnetic layer can be controlled appropriately.
摘要翻译： 形成在自由磁性层上的第二反铁磁层的阻挡温度低于第一反铁磁性层的阻挡温度。 自由磁性层与第二反铁磁性层之间的交换各向异性磁场小于第一反铁磁性层与被钉扎磁性层之间的交换各向异性磁场。 通过利用第一和第二反铁磁层之间的阻挡温度差进行退火处理，可以适当地控制磁化方向和钉扎磁性层和自由磁性层的强度。
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2.发明授权公开(公告)号：US06496338B2
公开(公告)日：2002-12-17
申请号：US09891327
申请日：2001-06-25
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , H01L43/12
摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.
摘要翻译： 本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。 第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。 一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。 此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加 为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。 第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。
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公开(公告)号：US6074707A
公开(公告)日：2000-06-13
申请号：US18919
申请日：1998-02-05
CPC分类号： B82Y25/00 , H01F10/3268 , H01F41/32 , H01L43/12
摘要： The present invention provides a method of producing a magnetoresistive element in which a laminate including a free ferromagnetic layer in which at least magnetization is freely rotated according to an external magnetic field, a non-magnetic layer, and a pinned ferromagnetic layer in which reversal of magnetization is pinned is formed, and is heat-treated for setting different directions of the easy axis of magnetization of the free ferromagnetic layer and the pinned ferromagnetic layer under different conditions. In the heat treatment, first annealing is performed at the predetermined temperature in a magnetic field applied in a first direction, and second annealing is performed in a magnetic field applied in a second direction substantially perpendicular to the first direction so that the easy axis of magnetization of the free ferromagnetic layer is substantially perpendicular to that of the pinned ferromagnetic layer.
摘要翻译： 本发明提供了一种制造磁阻元件的方法，其中包括自由铁磁层的层压体，其中至少磁化根据外部磁场自由旋转，非磁性层和固定的铁磁层，其中反转 形成磁化，并对不同条件下的自由铁磁层和被固定铁磁层的易磁化轴的不同方向进行热处理。 在热处理中，在施加于第一方向的磁场中，在规定温度下进行第一退火，在与第一方向大致正交的第二方向施加的磁场中进行第二退火，使得易磁化轴 的自由铁磁层基本上垂直于被钉扎的铁磁层。
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公开(公告)号：US5910344A
公开(公告)日：1999-06-08
申请号：US175593
申请日：1998-10-20
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G01R33/09 , G11B5/012 , G11B5/31 , G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , H01L43/12 , B29C35/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01L43/10 , H01L43/12 , G11B2005/3996 , G11B5/012 , G11B5/3163 , G11B5/3929 , G11B5/3967
摘要： The present invention provides a magnetoresistive sensor having at least two ferromagnetic layers provided with a non-magnetic layer therebetween; a coercive force increasing layer consisting of an antiferromagnetic material and provided adjacent to one of the ferromagnetic layers, for increasing the coercive force thereof to pin magnetization reversal, the other ferromagnetic layer having free magnetization reversal; and an antiferromagnetic layer provided to adjacent to the other ferromagnetic layer having free magnetization reversal, for applying a longitudinal bias to the other ferromagnetic layer to induce magnetic anisotropy therein due to an unidirectional exchange bias magnetic field to stabilize a magnetic domain.
摘要翻译： 本发明提供一种磁阻传感器，其具有至少两个在其间设置有非磁性层的铁磁层; 由反铁磁性材料构成的矫顽力增加层，并且与铁磁层之一相邻设置，用于增加其矫顽力以引起磁化反转，另一个铁磁层具有自由磁化反转; 以及反铁磁层，其设置成与具有自由磁化反转的另一个铁磁层相邻，用于由于单向交换偏置磁场而使另一个铁磁层施加纵向偏置以引起其各向异性以稳定磁畴。
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5.发明授权公开(公告)号：US06387548B1
公开(公告)日：2002-05-14
申请号：US09168775
申请日：1998-10-08
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/123 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1121
摘要： The antiferromagnetic layer 4 is formed of the X—Mn alloy (X is an platinum group element) and the interface structure of with the pinned magnetic layer 3 is made to be non-coherent by properly adjusting the composition ratio of X. Consequently, the crystal structure of the antiferromagnetic layer 4 is transformed so as to obtain a large exchange anisotropic magnetic field by subjecting the layer to a heat treatment, making it possible to improve the reproduction characteristic over the conventional art.
摘要翻译： 反铁磁层4由X-Mn合金（X是铂族元素）形成，并且通过适当调整X的组成比，使被钉扎磁性层3的界面结构变得不相干。因此， 通过使层进行热处理，反铁磁性层4的晶体结构被变换为获得大的交换各向异性磁场，从而可以提高现有技术的再生特性。
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公开(公告)号：US06591479B2
公开(公告)日：2003-07-15
申请号：US09538336
申请日：2000-03-29
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , G11C11/1675 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49055
摘要： A production method for a spin-valve type magnetoresistive element comprising laminating an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic electrically conductive layer, a free magnetic layer, and a second antiferromagnetic layer. The second antiferromagnetic layer is located on the free magnetic layer and orients the magnetization direction of the free magnetic layer. In this method, a first thermal treatment is performed at a first temperature of ordering a crystal structure of the first antiferromagnetic layer or at a second temperature lower than a second blocking temperature of the second antiferromagnetic layer. After the first thermal treatment, a second thermal treatment is performed at a third temperature lower than a first blocking temperature of the first antiferromagnetic layer but higher than said second blocking temperature of the second antiferromagnetic layer.
摘要翻译： 一种自旋阀型磁阻元件的制造方法，包括层叠反铁磁性层，钉扎磁性层，非磁性导电层，自由磁性层和第二反铁磁性层。 第二反铁磁层位于自由磁性层上并定向自由磁性层的磁化方向。 在该方法中，在排列第一反铁磁层的晶体结构的第一温度或低于第二反铁磁性层的第二阻挡温度的第二温度下进行第一热处理。 在第一热处理之后，在比第一反铁磁层的第一阻挡温度低的第三温度下进行第二热处理，但高于第二反铁磁性层的所述第二阻挡温度。
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7.发明授权公开(公告)号：US06295186B1
公开(公告)日：2001-09-25
申请号：US08944665
申请日：1997-10-06
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , H01L43/12
摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.
摘要翻译： 本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。 第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。 一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。 此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加 为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。 第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。
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公开(公告)号：US06351204B1
公开(公告)日：2002-02-26
申请号：US09565285
申请日：2000-05-02
申请人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
发明人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
IPC分类号： H01F500
CPC分类号： H01F10/187 , H01F17/0006 , H01F2017/0066
摘要： A thin magnetic element comprising a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the relationship 0.035≦t/a≦0.35, and the thin magnetic film has a resistivity of 400 &mgr;&OHgr;cm or more.
摘要翻译： 一种薄磁性元件，包括形成在衬底的至少一侧的线圈图案和形成在线圈图案上的薄磁膜，其中，假定构成线圈图案的线圈导体的厚度和宽度分别为t和a ，线圈导体的纵横比t / a满足关系0.035 <= t / a <= 0.35，薄磁膜的电阻率为400μΩEG·cm以上。
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9.发明授权Magnetic sensor exhibiting large change in resistance at low external magnetic field 失效磁传感器在低外部磁场下表现出较大的电阻变化公开(公告)号：US06191577B1
公开(公告)日：2001-02-20
申请号：US09036606
申请日：1998-03-06
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996 , H01F10/3268
摘要： A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.
摘要翻译： 磁阻传感器包括并列布置的多个多层磁阻膜。 每个多层磁阻膜包括至少一个钉扎铁磁层和至少一个自由磁性层。 固定的铁磁层的磁化反转被固定，而自由铁磁层的磁化矢量响应于外部磁场自由地反转。 两个相邻的多层磁阻膜中的钉扎铁磁层的磁化向量基本上是反平行的。
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公开(公告)号：US06326092B1
公开(公告)日：2001-12-04
申请号：US09593120
申请日：2000-06-13
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L43/12 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译： 磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度 在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向 的矫顽力增强层。 还公开了一种制造这种装置的方法。
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