公开(公告)号：US20130083568A1

公开(公告)日：2013-04-04

申请号：US13555420

申请日：2012-07-23

申请人： Kozo MAKIYAMA ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Kozo MAKIYAMA ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L29/78 ,  H02M5/458 ,  H01L21/336

CPC分类号： H01L29/408 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H02M7/537

摘要： An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.

摘要翻译： HEMT在SiC衬底上包括化合物半导体层，具有开口并覆盖化合物半导体层的氮化硅（SiN）保护膜和形成在化合物半导体层上的栅电极以堵塞开口。 在保护膜中，从开口侧面突出的突出部形成在下层部6a。

公开(公告)号：US08709886B2

公开(公告)日：2014-04-29

申请号：US13555420

申请日：2012-07-23

申请人： Kozo Makiyama ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Kozo Makiyama ,  Naoya Okamoto ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L21/338

CPC分类号： H01L29/408 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786 ,  H01L29/7787 ,  H02M7/537

摘要： An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.

摘要翻译： HEMT在SiC衬底上包括化合物半导体层，具有开口并覆盖化合物半导体层的氮化硅（SiN）保护膜和形成在化合物半导体层上的栅电极以堵塞开口。 在保护膜中，从开口侧面突出的突出部形成在下层部6a。

公开(公告)号：US09209042B2

公开(公告)日：2015-12-08

申请号：US14301679

申请日：2014-06-11

申请人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/285 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/872 ,  H01L21/28 ,  H01L29/205 ,  H01L23/29 ,  H01L23/31 ,  H01L29/43 ,  H01L29/20

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/28581 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/475 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。 在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

公开(公告)号：US20140295666A1

公开(公告)日：2014-10-02

申请号：US14301679

申请日：2014-06-11

申请人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L21/311 ,  H01L29/205 ,  H01L29/778 ,  H01L21/28 ,  H01L29/423

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/28581 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/475 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。 在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

公开(公告)号：US08791465B2

公开(公告)日：2014-07-29

申请号：US13549655

申请日：2012-07-16

申请人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Naoya Okamoto ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L21/48 ,  H01L21/285 ,  H01L29/423 ,  H01L29/47 ,  H01L29/872 ,  H01L29/778 ,  H01L29/20 ,  H01L29/43 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/28581 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/475 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。 在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

公开(公告)号：US20130082307A1

公开(公告)日：2013-04-04

申请号：US13549655

申请日：2012-07-16

申请人： Naoya OKAMOTO ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

发明人： Naoya OKAMOTO ,  Kozo Makiyama ,  Toshihiro Ohki ,  Yuichi Minoura ,  Shirou Ozaki ,  Toyoo Miyajima

IPC分类号： H01L29/808 ,  H01L21/283

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/28581 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/432 ,  H01L29/475 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.

摘要翻译： 化合物半导体器件包括化合物半导体层叠结构，在化合物半导体层叠结构上形成并具有通孔的钝化膜以及形成在钝化膜上以便堵塞通孔的栅电极。 在栅电极中形成不同结晶取向之间的晶界，并且晶界的起始点与钝化膜的平坦表面上的通孔分开。

公开(公告)号：US09035353B2

公开(公告)日：2015-05-19

申请号：US13567246

申请日：2012-08-06

申请人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

发明人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

IPC分类号： H01L29/66 ,  H01L21/00 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

摘要翻译： HEMT具有化合物半导体层，具有开口并覆盖化合物半导体层的上侧的保护膜和填充开口并具有骑在化合物半导体层上的形状的栅电极，其中保护膜具有 不含氧的下绝缘膜和含有氧的上绝缘膜的堆叠结构，并且所述开口包括形成在所述下绝缘膜中的第一开口和形成在所述上绝缘膜中并且比所述第一开口更宽的第二开口， 第一开口和第二开口相互通信。

公开(公告)号：US20130082400A1

公开(公告)日：2013-04-04

申请号：US13567246

申请日：2012-08-06

申请人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

发明人： Toshihiro Ohki ,  Naoya Okamoto ,  Yuichi Minoura ,  Kozo Makiyama ,  Shirou Ozaki

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.

摘要翻译： HEMT具有化合物半导体层，具有开口并覆盖化合物半导体层的上侧的保护膜和填充开口并具有骑在化合物半导体层上的形状的栅电极，其中保护膜具有 不含氧的下绝缘膜和含有氧的上绝缘膜的堆叠结构，并且所述开口包括形成在所述下绝缘膜中的第一开口和形成在所述上绝缘膜中并且比所述第一开口更宽的第二开口， 第一开口和第二开口相互通信。

公开(公告)号：US20130083569A1

公开(公告)日：2013-04-04

申请号：US13557332

申请日：2012-07-25

申请人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

发明人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

IPC分类号： H01L21/283 ,  H02M5/458 ,  H01L23/48 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/7787 ,  H01L29/872 ,  H02M1/4225 ,  H02M3/33569 ,  H02M2001/007 ,  Y02B70/126

摘要： A passivation film is formed on a compound semiconductor layered structure, an electrode formation scheduled position for the passivation film is thinned by dry etching, a thinned portion of the passivation film is penetrated by wet etching to form an opening, and a gate electrode is formed on the passivation film so as to embed this opening by an electrode material.

摘要翻译： 在化合物半导体层状结构上形成钝化膜，通过干蚀刻使钝化膜的电极形成预定位置变薄，通过湿蚀刻渗透钝化膜的薄化部分以形成开口，形成栅电极 在钝化膜上，以便通过电极材料嵌入该开口。

公开(公告)号：US08461041B2

公开(公告)日：2013-06-11

申请号：US12955525

申请日：2010-11-29

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Yuichi Minoura

IPC分类号： H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L23/485 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

摘要翻译： 制造半导体器件的方法包括：形成硅化合物基绝缘膜的绝缘膜; 在所述绝缘膜上形成开口，在含有烃气体的气氛中施加活性能量束，形成结晶SiC的阻挡层，并且在所述开口中形成所述阻挡层中的铜的互连结构。