公开(公告)号：US07790590B2

公开(公告)日：2010-09-07

申请号：US11886428

申请日：2006-03-13

申请人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

发明人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

IPC分类号： H01L21/20 ,  H01L21/44

CPC分类号： H01L21/76849 ,  C23C16/0218 ,  C23C16/14 ,  H01L21/28562 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.

摘要翻译： 在其上设置有带有填充有含Cu电互连膜的孔等的电绝缘膜的基板经受预处理，其中电绝缘膜的表面和含Cu电互连膜的表面 在不超过300℃的温度下，在预定状态下，在选择性地形成其中之前，含有选自由N，H和Si原子组成的组的化合物的化合物的气体 电气互连膜上的W覆盖膜。 在预处理完成之后，在电互连膜上选择性地形成W覆盖膜，然后进一步形成上部Cu电互连。

公开(公告)号：US07338900B2

公开(公告)日：2008-03-04

申请号：US11140362

申请日：2005-05-31

申请人： Eiichi Mizuno ,  Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

发明人： Eiichi Mizuno ,  Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/28568 ,  C23C16/34 ,  H01L21/28556

摘要： A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.

摘要翻译： 一种形成氮化钨膜的方法，包括：供给由钨化合物气体构成的第一原料气体的第一原料气体供给工序，供给还原气体的还原工序;第二原料气体供给工序， 的钨化合物气体，以及氮化步骤，供给氮化气体。 由于在基板5上沉积钨的步骤和形成氮化钨的步骤是通过改变每种气体的流量，每个气体的供给时的压力，供给时间或每个气体的次数， 执行步骤，并且可以容易地控制步骤的顺序，钨沉积的量和形成的氮化钨的量。

公开(公告)号：US20090232984A1

公开(公告)日：2009-09-17

申请号：US11886425

申请日：2006-03-13

申请人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

发明人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/452

摘要： In a vacuum chamber 42 comprising a film forming chamber 44 and a catalyst chamber 46 including a catalyst source 48 located opposed to a substrate S, the film forming chamber 44 is connected to the catalyst chamber 46 through an opening 47, the catalyst source being displace at a position satisfying ω≧θ, where ω is an angle included between the shortest linear line connecting the periphery of a substrate on the substrate supporting stage with the periphery of the opening and the substrate and where θ is an angle included between the shortest linear line connecting the periphery of the substrate with the edge of the catalyst source and the substrate. By using such a film forming apparatus, a radical produced at the catalyst source can be prevented from being deactivated so that the reaction between a source gas and the radical will be efficiently performed to form the desired film.

摘要翻译： 在包括成膜室44的真空室42和包括与基板S相对的催化剂源48的催化剂室46中，成膜室44通过开口47连接到催化剂室46，催化剂源位移 在满足omega =θ的位置处，其中ω是包括在连接基板支撑台上的基板的周边与开口的周边和基板之间的最短线性线之间的角度，其中θ是包括在最短的 将基板的周边与催化剂源的边缘和基板连接的线性线。 通过使用这样的成膜装置，可以防止在催化剂源产生的自由基失活，从而有效地进行源气体与自由基之间的反应，形成所需的膜。

公开(公告)号：US20080311741A1

公开(公告)日：2008-12-18

申请号：US11886428

申请日：2006-03-13

申请人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

发明人： Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

IPC分类号： H01L21/768

CPC分类号： H01L21/76849 ,  C23C16/0218 ,  C23C16/14 ,  H01L21/28562 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-containing electrical interconnection film are treated at a temperature of not more than 300° C. using, in a predetermined state, a gas of a compound containing an atom selected from the group consisting of N, H and Si atoms within the chemical formula thereof, before selectively forming a W-capping film on the electrical interconnection film. After the completion of the pre-treatment, a W-capping film is selectively formed on the electrical interconnection film and then an upper Cu electrical interconnection is further formed.

摘要翻译： 在其上设置有带有填充有含Cu电互连膜的孔等的电绝缘膜的基板经受预处理，其中电绝缘膜的表面和含Cu电互连膜的表面 在不超过300℃的温度下，在预定状态下，在选择性地形成其中之前，含有选自由N，H和Si原子组成的组的化合物的化合物的气体 电气互连膜上的W覆盖膜。 在预处理完成之后，在电互连膜上选择性地形成W覆盖膜，然后进一步形成上部Cu电互连。

公开(公告)号：US20050221625A1

公开(公告)日：2005-10-06

申请号：US11140362

申请日：2005-05-31

申请人： Eiichi Mizuno ,  Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

发明人： Eiichi Mizuno ,  Narishi Gonohe ,  Masamichi Harada ,  Nobuyuki Kato

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/469 ,  H01L21/4763

CPC分类号： H01L21/28568 ,  C23C16/34 ,  H01L21/28556

摘要： A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.

摘要翻译： 一种形成氮化钨膜的方法，包括：供给由钨化合物气体构成的第一原料气体的第一原料气体供给工序，供给还原气体的还原工序;第二原料气体供给工序， 的钨化合物气体，以及氮化步骤，供给氮化气体。 由于在基板5上沉积钨的步骤和形成氮化钨的步骤是通过改变每种气体的流量，每个气体的供给时的压力，供给时间或每个气体的次数， 执行步骤，并且可以容易地控制步骤的顺序，钨沉积的量和形成的氮化钨的量。

公开(公告)号：US20070178234A1

公开(公告)日：2007-08-02

申请号：US11710918

申请日：2007-02-27

申请人： Masamichi Harada ,  Narishi Gonohe

发明人： Masamichi Harada ,  Narishi Gonohe

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  B08B7/0035 ,  C23C16/0227 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76862

摘要： A technique that enables the formation of a low resistivity barrier film at low temperatures, and a technique that enables the removal of impurities (such as, oxides, fluorides, carbides, and nitrides) from the surfaces of semiconductor substrates and metal thin films at low temperatures. A catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. A low resistivity barrier film can be obtained at low temperatures. H2 gas, NH3 gas, SiH4 gas, or the like can be used as the reactive gas. Furthermore, the catalyst is placed in a vacuum atmosphere, and with the catalyst being heated, a treatment gas having a hydrogen atom in its chemical structure is brought into contact with the catalyst, thereby generating radicals. By exposing the surface of an object to be treated to these radicals, impurities (such as, oxides, fluorides or the like) are removed. Because the generated radicals are extremely reactive, a superior cleaning effect is achieved, even with the object being at low temperatures.

摘要翻译： 能够在低温下形成低电阻率阻挡膜的技术，以及能够从低温的半导体基板和金属薄膜的表面除去杂质（例如氧化物，氟化物，碳化物和氮化物）的技术 温度。 将催化剂放置在真空室内并加热，将原料气体和反应性气体交替地引入真空室中，并且在吸附到物体表面的原料气体与分解产生的自由基之间进行反应 的反应气体与催化剂接触，从而在物体上沉积薄膜。 在低温下可以获得低电阻率阻挡膜。 可以使用H 2气体，NH 3气体，SiH 4气体等作为反应气体。 此外，将催化剂置于真空气氛中，在加热催化剂的情况下，将具有化学结构中的氢原子的处理气体与催化剂接触，从而产生自由基。 通过将待处理物体的表面暴露于这些自由基，除去杂质（例如氧化物，氟化物等）。 由于所产生的自由基具有极高的反应性，所以即使物体处于低温也能实现优异的清洁效果。

公开(公告)号：US20050118810A1

公开(公告)日：2005-06-02

申请号：US10989541

申请日：2004-11-17

申请人： Masamichi Harada ,  Narishi Gonohe

发明人： Masamichi Harada ,  Narishi Gonohe

IPC分类号： H01L21/205 ,  B08B7/00 ,  C23C16/00 ,  C23C16/02 ,  C23C16/18 ,  C23C16/34 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H05H1/00

CPC分类号： H01L21/76843 ,  B08B7/0035 ,  C23C16/0227 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76862

摘要： A technique that enables the formation of a low resistivity barrier film at low temperatures, and a technique that enables the removal of impurities (such as, oxides, fluorides, carbides, and nitrides) from the surfaces of semiconductor substrates and metal thin films at low temperatures. A catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. A low resistivity barrier film can be obtained at low temperatures. H2 gas, NH3 gas, SiH4 gas, or the like can be used as the reactive gas. Furthermore, the catalyst is placed in a vacuum atmosphere, and with the catalyst being heated, a treatment gas having a hydrogen atom in its chemical structure is brought into contact with the catalyst, thereby generating radicals. By exposing the surface of an object to be treated to these radicals, impurities (such as, oxides, fluorides or the like) are removed. Because the generated radicals are extremely reactive, a superior cleaning effect is achieved, even with the object being at low temperatures.

摘要翻译： 能够在低温下形成低电阻率阻挡膜的技术，以及能够从低温的半导体基板和金属薄膜的表面除去杂质（例如氧化物，氟化物，碳化物和氮化物）的技术 温度。 将催化剂放置在真空室内并加热，将原料气体和反应性气体交替地引入真空室中，并且在吸附到物体表面的原料气体与分解产生的自由基之间进行反应 的反应气体与催化剂接触，从而在物体上沉积薄膜。 在低温下可以获得低电阻率阻挡膜。 可以使用H 2气体，NH 3气体，SiH 4气体等作为反应气体。 此外，将催化剂置于真空气氛中，在加热催化剂的情况下，将具有化学结构中的氢原子的处理气体与催化剂接触，从而产生自由基。 通过将待处理物体的表面暴露于这些自由基，除去杂质（例如氧化物，氟化物等）。 由于所产生的自由基具有极高的反应性，所以即使物体处于低温也能实现优异的清洁效果。

公开(公告)号：US08216642B2

公开(公告)日：2012-07-10

申请号：US11710918

申请日：2007-02-27

申请人： Masamichi Harada ,  Narishi Gonohe

发明人： Masamichi Harada ,  Narishi Gonohe

IPC分类号： C23C16/18

CPC分类号： H01L21/76843 ,  B08B7/0035 ,  C23C16/0227 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76862

摘要： A technique that enables the formation of a low resistivity barrier film at low temperatures, in which a catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas (such as H2, NH3 or SiH4) are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. Furthermore, a technique for removal of impurities (such as oxides, fluorides, carbides or nitrides), in which the catalyst is placed in a vacuum atmosphere and heated, and a treatment gas having a hydrogen atom in its chemical structure is brought into contact with the catalyst, thereby generating radicals. The surface of an object to be treated is exposed to these radicals.

摘要翻译： 将催化剂置于真空室内并加热的原料气体和反应性气体（例如H 2，NH 3或SiH 4）的低温下形成低电阻率阻挡膜的技术被交替地引入 真空室，并且在被吸附到物体表面的原料气体和与催化剂接触的反应气体分解产生的自由基之间进行反应，从而在物体上沉积薄膜。 此外，将催化剂置于真空气氛中并加热的杂质（例如氧化物，氟化物，碳化物或氮化物）以及具有其化学结构中的氢原子的处理气体的除去技术与 催化剂，从而产生自由基。 待处理物体的表面暴露于这些自由基。

公开(公告)号：US20110084609A1

公开(公告)日：2011-04-14

申请号：US12885073

申请日：2010-09-17

申请人： Yoshinobu KAWAGUCHI ,  Kenichi Yoshimura ,  Masamichi Harada ,  Katsuhiko Kishimoto

发明人： Yoshinobu KAWAGUCHI ,  Kenichi Yoshimura ,  Masamichi Harada ,  Katsuhiko Kishimoto

IPC分类号： B60Q1/08 ,  H05B37/02

CPC分类号： F21V23/0442 ,  F21S41/14 ,  F21S41/16 ,  F21S45/10 ,  F21V9/30 ,  F21W2102/00 ,  F21Y2115/30 ,  H01S5/005

摘要： An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.

摘要翻译： 提供了一种提高眼睛安全性的照明装置。 照明装置包括：半导体激光元件，用作发射激光的激发光源; 荧光板，其包含用于发射所需颜色的光的荧光物质，并且用从所述半导体激光元件发射的激光照射; 检测从荧光板反射的光的受光元件部; 以及光源控制部，其基于来自所述受光元件部的检测信号，控制从所述半导体激光元件发出的激光。

公开(公告)号：US20090194781A1

公开(公告)日：2009-08-06

申请号：US12354068

申请日：2009-01-15

申请人： Masamichi Harada

发明人： Masamichi Harada

IPC分类号： H01L33/00 ,  C09K11/70

CPC分类号： H01L33/504 ,  C09K11/025 ,  C09K11/7734 ,  H01L2933/0091 ,  H05B33/14 ,  H05B33/20

摘要： A wavelength conversion member provided with a composite phosphor obtained by coating surfaces of phosphor particles with coating material particles and has an average particle diameter of the coating material of not more than 1/10 of an average particle diameter of the phosphor particles, and a light emitting device using the same. It is possible to control dispersibility of the phosphor particles in the wavelength conversion member, and it is possible to provide a light emitting device free from color variability and having good light emission efficiency by combining the wavelength conversion member with a semiconductor light emitting element.

摘要翻译： 一种波长转换部件，其具有通过用涂料粒子涂布荧光体粒子的表面而得到的复合荧光体，并且所述涂料的平均粒径为所述荧光体粒子的平均粒径的1/10以下， 发光装置。 可以控制荧光体颗粒在波长转换构件中的分散性，并且可以通过组合波长转换构件和半导体发光元件来提供不具有颜色变化并且具有良好发光效率的发光装置。