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32 条记录 (耗时 0.032 秒)

    Amino acid N-carboxyanhydrides with acyl substituents on nitrogen atoms thereof
    6.
    发明授权
    Amino acid N-carboxyanhydrides with acyl substituents on nitrogen atoms thereof 失效
    在其氮原子上具有酰基取代基的氨基酸N-羧酸酐

    公开(公告)号：US06670447B2

    公开(公告)日：2003-12-30

    申请号：US10070156

    申请日：2002-03-04

    申请人： Hidetoshi Tsunoda ,  Michiru Sekiguchi ,  Hajime Iizuka ,  Kazuya Sakai

    发明人： Hidetoshi Tsunoda ,  Michiru Sekiguchi ,  Hajime Iizuka ,  Kazuya Sakai

    IPC分类号： C07K1600

    CPC分类号： C07D263/44 ,  C07C231/10 ,  C07C237/22 ,  C07D231/12 ,  C07D233/56 ,  C07D249/08 ,  C07D295/185 ,  C07D413/06 ,  C07D413/14 ,  C07D417/06 ,  C07D417/14 ,  C07D471/04 ,  C07D487/08

    摘要： This invention provides amino acid N-carboxyanhydrides, each of which has an N-acyl substituent on its nitrogen atom, is represented by the following formula (1): readily reacts with nucleophilic reagents such as free amino acids, alcohols, anions or the like, and are intermediates useful for the high-yield production of amino acid derivatives, optically active compounds, peptides, polypeptides and the like useful in many fields lead by the fields of pharmaceuticals and agrochemicals, and also provides a process for the production of the amino acid N-carboxyanhydrides. Further, the present invention also provides a process for the production of diamides, which uses the compounds of the formula (1) and amine derivatives represented by the following formula (7): These diamides can also be suitably used for the production of amino acid derivatives, optically active compounds, peptides, polypeptides and the like.

    摘要翻译： 本发明提供氨基酸N-羧酸酐，其各自在其氮原子上具有N-酰基取代基，由下式（1）表示：容易与亲核试剂如游离氨基酸，醇，阴离子等反应 并且是用于高产量生产氨基酸衍生物，光学活性化合物，肽，多肽等的中间体，其在许多领域中可用于药物和农用化学品的领域，并且还提供了制备氨基酸的方法 酸性N-羧酸酐。 此外，本发明还提供了使用式（1）的化合物和由下式（7）表示的胺衍生物的二酰胺的制备方法：这些二酰胺也可以适合用于制备氨基酸 衍生物，光学活性化合物，肽，多肽等。

    MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK
    7.
    发明申请
    MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND TRANSFER MASK 有权
    掩模布，其制造方法和转印掩模

    公开(公告)号：US20130177841A1

    公开(公告)日：2013-07-11

    申请号：US13823206

    申请日：2011-09-29

    申请人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    发明人： Kazuya Sakai ,  Masahiro Hashimoto ,  Takeyuki Yamada

    IPC分类号： G03F1/50

    CPC分类号： G03F1/50 ,  G03F1/38

    摘要： Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate 1, a thin film 2 which is for forming a transfer pattern and is made of a material containing a metal. The thin film 2 has a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin film 2 can be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.

    摘要翻译： 提供了一种掩模坯料，其提高了用于将形成转印图案的薄膜粘合到抗蚀剂上，从而能够抑制所形成的抗蚀剂图案的崩溃，碎裂等的发生。 掩模坯料在透明基板1上具有用于形成转印图案并由含有金属的材料制成的薄膜2。 薄膜2具有含有烃的氧化膜形式的表面改性层。 薄膜2的表面改性层可以通过例如使高度浓缩的臭氧气体和不饱和烃气体作用于薄膜而形成。

    Photomask blank manufacturing method and photomask manufacturing method
    8.
    发明授权
    Photomask blank manufacturing method and photomask manufacturing method 有权
    光掩模坯料制造方法和光掩模制造方法

    公开(公告)号：US08221941B2

    公开(公告)日：2012-07-17

    申请号：US12647808

    申请日：2009-12-28

    申请人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

    发明人： Toshiyuki Suzuki ,  Masahiro Hashimoto ,  Kazunori Ono ,  Ryo Ohkubo ,  Kazuya Sakai

    IPC分类号： G03F1/22

    CPC分类号： G03F1/32

    摘要： A thin film made of a material containing a metal and silicon is formed on a light-transmissive substrate. Then, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin film, the transfer characteristic of the thin film pattern does not change more than a predetermined degree. This treatment is performed by carrying out, for example, a heat treatment in an atmosphere containing oxygen at 450° C. to 900° C.

    摘要翻译： 在透光性基板上形成由含有金属和硅的材料构成的薄膜。 然后，进行处理以预先修改薄膜的主表面，使得当将具有200nm或更小的波长的曝光光累积地照射到通过对薄膜进行图案化而制造的光掩模的薄膜图案上时， 薄膜图案的转印特性不会超过预定的程度。 该处理通过例如在450℃〜900℃的含氧气氛中进行热处理来进行。

    Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same
    9.
    发明授权
    Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same 有权
    掩模毛坯，其制造方法，转印掩模及其制造方法

    公开(公告)号：US09091934B2

    公开(公告)日：2015-07-28

    申请号：US13995751

    申请日：2011-12-22

    申请人： Kazuya Sakai ,  Masahiro Hashimoto

    发明人： Kazuya Sakai ,  Masahiro Hashimoto

    IPC分类号： G03F1/50 ,  H01L21/3065 ,  G03F1/46 ,  H01L21/308 ,  H01L21/3213 ,  G03F1/82

    CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/82 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3213 ,  H01L21/32136

    摘要： Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

    摘要翻译： 提供了一种制造掩模坯料的方法，该掩模坯料具有改进的耐臭氧清洁等的清洁性能，因此能够防止由于清洁而引起的掩模性能的劣化。 该方法用于制造掩模坯料，其在基板上具有在其表面形成有由含有过渡金属的材料制成的抗反射层的薄膜，并进行使高浓度的臭氧气体与 浓度为50〜100体积％，从而形成表面改性层，该表面改性层包含在抗反射层的表面含有过渡金属的氧化物的强氧化物膜。