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公开(公告)号：US10325953B2
公开(公告)日：2019-06-18
申请号：US15562965
申请日：2016-03-31
发明人： Shoji Kawahito
IPC分类号： H01L31/10 , H01L27/144 , H01L27/146 , G01S7/481 , H04N5/361 , H04N5/369 , H04N5/374 , H04N5/3745
摘要： A range sensor includes: an n-type surface-buried region selectively buried in an upper portion of a pixel layer to implement a photodiode and extending from a light-receiving area toward plural portions shielded by a shielding plate along the upper portion of the pixel layer so as to provide a plurality of branches; n-type charge-accumulation regions having a higher impurity concentration than the surface-buried region; a plurality of transfer gate electrodes provided adjacent to the charge-accumulation regions; and an n-type guide region having a higher impurity concentration than the surface-buried region and a lower impurity concentration than the charge-accumulation regions, and provided with one end below an aperture of the shielding plate and other ends extending to a part of the respective transfer gate electrodes.
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公开(公告)号：US12087802B2
公开(公告)日：2024-09-10
申请号：US17679453
申请日：2022-02-24
发明人： Shoji Kawahito , Keita Yasutomi , Noriyuki Miura , Atsushi Yabata
IPC分类号： H01L27/148
CPC分类号： H01L27/14856
摘要： A semiconductor device in which an SOI substrate having an element region in which circuit elements are formed, an insulation layer having a first surface adjoining the SOI substrate, and a support substrate of a first conductivity type are laminated. On the SOI substrate, a transfer electrode configured to transfer charges generated in the support substrate to a third semiconductor layer is formed in a region different from the element region, and the transfer electrode and the third semiconductor layer are adjacent in plan view.
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公开(公告)号：US11442169B2
公开(公告)日：2022-09-13
申请号：US16637028
申请日：2018-08-07
发明人： Shoji Kawahito
IPC分类号： G01S17/894 , G01S7/48 , G01S17/10 , H01L27/146 , G01S7/4865
摘要： A distance image sensor includes a light source, a light source control means for controlling the light source, a pixel circuit including a photoelectric conversion region, charge readout regions, and control electrodes, a charge transfer control means for sequentially applying a control pulse to the control electrodes, and a distance calculation means for reading voltages of the charge readout regions as detection signals and repeatedly calculating a distance on the basis of the detection signals, and the distance calculation means calculates a sum value of signal components of charge generated from the pulsed light other than background light among the detection signals, calculates a distance from the detection signals using a predetermined equation when the sum value exceeds a first threshold value, and invalidates the calculation of the distance when the sum value does not exceed the first threshold value.
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公开(公告)号：US10680032B2
公开(公告)日：2020-06-09
申请号：US16331544
申请日：2017-09-15
发明人： Shoji Kawahito
IPC分类号： H01L27/146 , H04N5/378 , H04N5/355 , H01L31/10 , H04N5/3745 , H04N5/353
摘要： The present invention provides a photoelectric conversion element and a solid-state image sensor, having a simple structure, a wide dynamic range, a high speed and a high sensibility, which includes a principal layer of a first conductivity type, a surface-buried region of a second conductivity type, selectively buried in an upper portion of the principal layer so as to implements a photodiode with the principal layer, a first charge-accumulation region of the second conductivity type, buried in the upper portion of the principal layer configured to accumulate first signal charges transferred from the surface-buried region, generated by the photodiode, and a second charge-accumulation region of the second conductivity type, buried in the principal layer configured to accumulate second signal charges transferred from the surface-buried region, generated by the photodiode, wherein a process including a first period, in which the first signal charges are transferred from the surface-buried region to the first charge-accumulation region, and a second period shorter than the first period, in which the second signal charges are transferred from the surface-buried region to the second charge-accumulation region is repeated multiple times in one frame period.
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公开(公告)号：US10453880B2
公开(公告)日：2019-10-22
申请号：US15760743
申请日：2016-09-16
发明人： Shoji Kawahito , Min-Woong Seo
摘要： A semiconductor element includes a semiconductor region (11) of a first conductivity type, a buried charge-generation region (16) of a second conductivity type, buried in an upper portion of the semiconductor region (11) to implement a photodiode (D1) together with the semiconductor region (11) to generate charges, a charge-readout region (15) of the second conductivity type, provided in the semiconductor region (11) to accumulate the charges transferred from the buried charge-generation region (16), and a reset-performing region (12) of the second conductivity type, provided in the semiconductor region (11), a variable voltage is applied to the reset-performing region (12) to change the height of a potential barrier generated in the semiconductor region (11) sandwiched between the charge-readout region (15) and the reset-performing region (12) to exhaust the charges accumulated in the charge-readout region (15). The semiconductor element has a high pixel conversion gain, ultralow noise of a photon counting level and implements a solid-state imaging device.
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公开(公告)号：US10132927B2
公开(公告)日：2018-11-20
申请号：US14889945
申请日：2014-04-04
发明人： Shoji Kawahito , Keita Yasutomi
IPC分类号： G01S17/10 , G01S7/486 , H01L27/146 , G01S17/89
摘要： A distance measurement device according to one aspect of the present invention includes a photoelectric conversion device which includes a light receiving unit, a charge storage unit, a charge discharge unit, and a gate electrode, a controller which controls an irradiation timing of pulse light having a pulse width which is sufficiently shorter than response time of the light receiving unit to an object and performs control to generate control pulse voltages having at least two kinds of phases based on the irradiation timing and to apply it to the gate electrode, a charge reading unit which reads a first and second charges stored in the charge storage unit according to the applications of the respective control pulse voltages having two kinds of phases as a first and second electrical signals, and a calculation unit which calculates a distance to the object based on the first and second electrical signals.
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公开(公告)号：US09832409B2
公开(公告)日：2017-11-28
申请号：US15116732
申请日：2015-02-06
发明人： Shoji Kawahito , Keita Yasutomi
IPC分类号： H04N5/376 , H04N5/225 , H04N5/374 , G06T5/00 , H01L27/146 , G01S7/486 , H01L27/148 , G01S17/89
CPC分类号： H04N5/3765 , G01S7/4863 , G01S17/89 , H01L27/14609 , H01L27/14806 , H04N5/2256 , H04N5/374
摘要： A high-accurate imaging increased in time resolution can be made. The camera device is provided with a plurality of pixels that include a light-receiving surface embedded region to convert incident light into charges, a charge accumulation region to accumulate the charges, and a gate electrode to control the charges to be transferred from the light-receiving surface embedded region to the charge accumulation region, and are one-dimensionally arranged in each of a plurality of columns, a timing generation circuit which generates a control pulse voltage to be applied to the gate electrode, and a correction circuit unit which is provided in accordance with each of a plurality of columns of the pixels, delays the control pulse voltage in a variable time, and applies the control pulse voltage to the gate electrodes of the plurality of pixels belonging to a column corresponding to the control pulse voltage.
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公开(公告)号：US09202902B2
公开(公告)日：2015-12-01
申请号：US14419341
申请日：2013-08-01
发明人： Shoji Kawahito
IPC分类号： H01L27/00 , H01L29/768 , H01L27/148 , H01L27/146 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H01L29/76833 , H01L27/146 , H01L27/1461 , H01L27/14612 , H01L27/148 , H01L27/14806 , H01L27/14812 , H01L27/14818 , H01L27/14825 , H01L27/14831 , H01L27/14843 , H01L27/1485 , H04N5/369 , H04N5/372 , H04N5/374
摘要： A semiconductor element encompasses a charge-transfer path defined in a semiconductor region (34.35), configured to transfer signal charges, (b) a pair of first field-control electrodes (42a, 42b) laminated via an insulating film on the semiconductor region so as to sandwich the charge-transfer path in between, and a pair of second field-control electrodes (43a, 43b) arranged separately from and adjacently to the first field-control electrodes (42a, 42b). By applying field-control voltages differing from each other, to the first and second field-control electrodes (43a, 43b), a depleted potential in the charge-transfer path is changed, and a movement of the signal charges transferring in the semiconductor region is controlled. Because electric field can be made constant over a long distance along the charge-transfer direction, a semiconductor element and a solid-state imaging device, in which problems caused by interface defects and the like are avoided, can be provided.
摘要翻译： 半导体元件包括限定在半导体区域（34.35）中的电荷传输路径，被配置为传送信号电荷，（b）经由半导体区域上的绝缘膜层压的一对第一场控制电极（42a，42b），从而 将电荷转移路径夹在中间，以及与第一场控制电极（42a，42b）分开并相邻配置的一对第二场控制电极（43a，43b）。 通过施加彼此不同的场控制电压到第一和第二场控制电极（43a，43b），电荷传输路径中的耗尽电位改变，并且在半导体区域中传输的信号电荷的移动 被控制。 由于可以沿着电荷转移方向使电场长距离恒定，所以可以提供避免由界面缺陷等引起的问题的半导体元件和固体摄像器件。
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公开(公告)号：US10230914B2
公开(公告)日：2019-03-12
申请号：US15115814
申请日：2015-02-06
发明人： Shoji Kawahito , Keita Yasutomi , Sangman Han
IPC分类号： G01C3/08 , H04N5/378 , H01L27/144 , G01S17/89 , G01S7/486 , H01L27/146 , H04N5/374
摘要： A charge-modulation element includes a first charge-accumulation region, a second charge-accumulation region, a third charge-accumulation region, and a fourth charge-accumulation region, provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair, a second field-control electrode pair, a third field-control electrode pair, and a fourth field-control electrode pair, arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region, the second charge-accumulation region, the third charge-accumulation region, and the fourth charge-accumulation region.
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公开(公告)号：US20150215549A1
公开(公告)日：2015-07-30
申请号：US14420172
申请日：2013-08-07
发明人： Keiichiro Kagawa , Shoji Kawahito
CPC分类号： H04N5/357 , H04N3/1593 , H04N5/243 , H04N5/341 , H04N5/3415 , H04N5/359 , H04N5/361 , H04N5/374 , H04N5/3745 , H04N2209/048
摘要： A solid-state image pickup device 1A includes an image pickup section 2 having a pixel array P in which a pixel C is two-dimensionally arranged, a lens section 3 having a plurality of lenses 3a arranged on the pixel array P, and an image generating section 4A for generating an image by using an electrical signal SE. The image pickup section 2 has a plurality of the pixel arrays P including one image pickup region T. The image generating section 4A generates the image by averaging the electrical signals SE for each pixel C corresponding to one another among the image pickup regions T, in order to reduce noise present in the electrical signal SE.
摘要翻译： 固态图像拾取装置1A包括具有二维排列像素C的像素阵列P的图像拾取部分2，具有布置在像素阵列P上的多个透镜3a的透镜部分3和图像 生成部4A，用于通过使用电信号SE来生成图像。 图像拾取部分2具有包括一个图像拾取区域T的多个像素阵列P.图像生成部分4A通过对图像拾取区域T中彼此对应的每个像素C的电信号SE进行平均来生成图像， 以减少存在于电信号SE中的噪声。
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