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公开(公告)号：US07732121B2
公开(公告)日：2010-06-08
申请号：US11758958
申请日：2007-06-06
申请人： Natsuhiko Mizutani , Yasuhisa Inao
发明人： Natsuhiko Mizutani , Yasuhisa Inao
CPC分类号： G03F7/70383 , B82Y10/00 , G03F1/50 , G03F7/2014
摘要： A near-field exposure method includes closely contacting an exposure mask having a light blocking film with small openings, to a photoresist layer formed on a substrate having surface unevenness, and projecting the exposure light of the exposure light source onto the exposure mask so that the photoresist is exposed based on near-field light escaping from the small openings, wherein the near-field exposure is carried out under a condition that a contact region where the light blocking film and the photoresist layer are in contact with each other and a liquid region filled with a liquid between the light blocking film and the photoresist layer coexist between the light blocking film and the photoresist layer.
摘要翻译： 近场曝光方法包括将具有小开口的遮光膜的曝光掩模紧密接触到具有表面凹凸的基板上形成的光致抗蚀剂层，并将曝光光源的曝光光投射到曝光掩模上，使得 基于从小开口逸出的近场光来曝光光致抗蚀剂，其中在遮光膜和光致抗蚀剂层彼此接触的接触区域和液体区域的条件下进行近场曝光 在遮光膜和光致抗蚀剂层之间填充有液体，遮光膜和光致抗蚀剂层共存。
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2.发明申请公开(公告)号：US20070218398A1
公开(公告)日：2007-09-20
申请号：US11705787
申请日：2007-02-14
IPC分类号： G03C5/18
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl. group.
摘要翻译： 提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。 使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。 组。
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公开(公告)号：US20070146680A1
公开(公告)日：2007-06-28
申请号：US10554993
申请日：2005-06-24
申请人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
IPC分类号： G03B27/62
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F1/60 , G03F7/2014 , G03F7/70325 , G03F7/70433 , G03F7/70691 , G03F9/703 , G03F9/7053 , G03F9/7088
摘要： Disclosed is an exposure apparatus, an exposure method and an exposure mask, for improved optical lithography. Specifically, in accordance with one preferred form of the invention, the exposure apparatus is arranged to be used with an exposure mask having an elastically deformable holding member and a light blocking film provided on the holding member and being formed with an opening pattern, wherein for exposure the exposure mask is flexed to be brought into contact with an object to be exposed. The exposure apparatus includes a distance detecting system for detecting a distance between the exposure mask before being flexed and the object to be exposed, and a distance controlling system for controlling the distance between the exposure mask before being flexed and the object to be exposed, on the basis of a signal from the distance detecting system.
摘要翻译： 公开了一种用于改进的光刻技术的曝光装置，曝光方法和曝光掩模。 具体地，根据本发明的一个优选形式，曝光装置被布置成与具有可弹性变形的保持构件和设置在保持构件上并形成有开口图案的遮光膜的曝光掩模一起使用，其中， 暴露曝光掩模被弯曲以与待曝光的物体接触。 曝光装置包括用于检测在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离检测系统，以及用于控制在弯曲之前的曝光掩模与待曝光的物体之间的距离的距离控制系统， 来自距离检测系统的信号的基础。
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公开(公告)号：US20070065734A1
公开(公告)日：2007-03-22
申请号：US11548756
申请日：2006-10-12
申请人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Ryo Kuroda , Natsuhiko Mizutani
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/50 , G03F7/2014 , G03F7/70325 , G03F7/70566
摘要： An exposure method for exposing a workpiece on the basis of near-field light escaping from an opening of a mask. The method includes projecting non-polarized exposure light having a predetermined wavelength, emitted from a laser light source and passed through a depolarization device and a diffusion device, onto an exposure mask having a light blocking film formed with a plurality of rectangular openings therein, the openings having (i) a width in a widthwise direction not greater than one-third of the wavelength of the exposure light and (ii) two or more lengthwise directions extending along the mask surface, so that near-field light escaping from the openings performs exposure of a pattern on the basis of the openings.
摘要翻译： 一种用于基于从掩模的开口逸出的近场光暴露工件的曝光方法。 该方法包括将从激光源射出并通过去极化装置和扩散装置的具有预定波长的非偏振曝光光投射到具有形成有多个矩形开口的遮光膜的曝光掩模上， 具有（i）宽度方向的宽度不大于曝光光的波长的三分之一的开口和（ii）沿着掩模表面延伸的两个或更多个长度方向，使得从开口逸出的近场光执行 在开口的基础上曝光图案。
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5.发明授权公开(公告)号：US07704672B2
公开(公告)日：2010-04-27
申请号：US11705787
申请日：2007-02-14
CPC分类号： G03F7/0755 , C07F7/12 , C07F7/1804 , G03F7/022 , G03F7/0751 , G03F7/165
摘要： Provided are a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern through fewer steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent comprising a 1,2-naphthoquinone-2-diazido-5-sulfonyl group or a 1,2-naphthoquinone-2-diazido-4-sulfonyl group.
摘要翻译： 提供了用于通过较少步骤形成低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。 使用的是含有1,2-萘醌-2-二叠氮基-5-磺酰基或1,2-萘醌-2-二叠氮基-4-磺酰基的感光性硅烷偶联剂。
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公开(公告)号：US20090311631A1
公开(公告)日：2009-12-17
申请号：US11914040
申请日：2007-10-10
申请人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
发明人： Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
CPC分类号： G03F9/7038 , B82Y10/00 , G03F7/70325 , G03F7/7035 , G03F7/70866 , G03F9/7096 , Y10S430/167
摘要： A near-field exposure apparatus includes a near-field exposure mask, a mechanism to place a substrate to be exposed, opposed to the near-field exposure mask, a mechanism to perform relative alignment of the near-field exposure mask and the substrate to be exposed, a mechanism to closely contact the near-field exposure mask and the substrate to be exposed, with each other, a mechanism to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed.
摘要翻译： 近场曝光装置包括近场曝光掩模，与近场曝光掩模相对地放置待曝光的基板的机构，用于执行近场曝光掩模和基板的相对对准的机构， 暴露出将近场曝光掩模和待曝光的基板紧密接触的机构，将曝光光投射到近场曝光掩模的机构，以及用于去除静电的软X射线照射装置 在近场曝光掩模和待暴露的基板中的至少一个中充电的电。 软X射线照射装置设置在远离待曝光的基板的近场曝光掩模的一侧。
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7.发明申请公开(公告)号：US20080246970A1
公开(公告)日：2008-10-09
申请号：US12131433
申请日：2008-06-02
IPC分类号： G01N21/55
CPC分类号： G01N21/648 , G01N21/554 , Y10T436/11
摘要： A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.
摘要翻译： 传感器装置由具有多个开口的金属膜形成，位于每个开口内的传感器材料，发射具有第一波长的光的光源和检测从光源发出的光并发射的光检测器 从开口穿过或反射。 多个开口在金属膜中沿第一方向周期性地布置，并且多个开口中的每一个的尺寸和第一方向上的间隔都等于或小于光的波长。
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8.发明申请Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device 失效光敏硅烷偶联剂，形成图案的方法和制造装置的方法公开(公告)号：US20070218373A1
公开(公告)日：2007-09-20
申请号：US11710901
申请日：2007-02-27
IPC分类号： G03F1/00
CPC分类号： G03F7/165 , C07F7/12 , C07F7/1804 , G03F7/0751 , G03F7/0755
摘要： Provided is a photosensitive silane coupling agent for forming a low-defect microparticle pattern, dot array pattern, or hole array pattern with a smaller number of process steps, and a method of forming a pattern using such photosensitive silane coupling agent. Used is a photosensitive silane coupling agent having a secondary amino group protected by an o-nitrobenzyloxycarbonyl group.
摘要翻译： 提供了用于形成具有较少数量的工艺步骤的低缺陷微粒图案，点阵列图案或孔阵列图案的感光性硅烷偶联剂，以及使用这种感光性硅烷偶联剂形成图案的方法。 使用具有被邻硝基苄氧基羰基保护的仲氨基的感光性硅烷偶联剂。
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9.发明授权公开(公告)号：US07733491B2
公开(公告)日：2010-06-08
申请号：US12131433
申请日：2008-06-02
CPC分类号： G01N21/648 , G01N21/554 , Y10T436/11
摘要： A sensor device is formed from a metal film having a plurality of openings, a sensor material positioned within each of the openings, a light source that emits light having a first wavelength, and a light detector that detects light emitted from the light source and transmitted through or reflected from the openings. The plurality of openings are arranged periodically in a first direction in the metal film, and both a size of each of the plurality of openings and an interval thereof in the first direction are equal to or less than the wavelength of the light.
摘要翻译： 传感器装置由具有多个开口的金属膜形成，位于每个开口内的传感器材料，发射具有第一波长的光的光源和检测从光源发出的光并发射的光检测器 从开口穿过或反射。 多个开口在金属膜中沿第一方向周期性地布置，并且多个开口中的每一个的尺寸和第一方向上的间隔都等于或小于光的波长。
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公开(公告)号：US20080199817A1
公开(公告)日：2008-08-21
申请号：US12102152
申请日：2008-04-14
申请人： Natsuhiko Mizutani , Yasuhisa Inao
发明人： Natsuhiko Mizutani , Yasuhisa Inao
IPC分类号： G03F7/00
CPC分类号： G03F7/7035 , B82Y10/00 , G03F1/36 , G03F1/50 , G03F7/2014 , G03F7/70325
摘要： A resist pattern forming method includes preparing a photomask for generating near-field light having an intensity distribution. The photomask has a light-transmissible base member, and a light-blocking film. The film has a micro-aperture adapted to expose an object to near-field light seeping out from the micro-aperture. The photomask has a periodic structure and a shift of a phase. The shift exists between recesses or projections adjacent to the micro-aperture. A difference in the intensity distribution of the near-field light in the area of the aperture is reduced. The photomask is arranged close to a photoresist film on a substrate. Light from a light source irradiates the photoresist film by way of the photomask to form a latent image based on the micro-aperture, and the photoresist film is developed to form a resist pattern on the substrate based on the latent image.
摘要翻译： 抗蚀剂图案形成方法包括制备用于产生具有强度分布的近场光的光掩模。 光掩模具有透光性基材和遮光膜。 该膜具有适于将物体暴露于从微孔渗出的近场光的微孔。 光掩模具有周期性结构和相位偏移。 在与微孔相邻的凹部或突起之间存在偏移。 孔径区域中的近场光的强度分布的差异减小。 光掩模布置在基板上的光致抗蚀剂膜附近。 来自光源的光通过光掩模照射光致抗蚀剂膜，以基于微孔形成潜像，并且基于潜像在光致抗蚀剂图案上显影以在基板上形成抗蚀剂图案。
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