公开(公告)号：US08173550B2

公开(公告)日：2012-05-08

申请号：US13179851

申请日：2011-07-11

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/302

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

摘要翻译： 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US20090258492A1

公开(公告)日：2009-10-15

申请号：US12489337

申请日：2009-06-22

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/306

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

摘要翻译： 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US07279377B2

公开(公告)日：2007-10-09

申请号：US11200694

申请日：2005-08-10

申请人： Neal R. Rueger ,  Gurtej Sandhu

发明人： Neal R. Rueger ,  Gurtej Sandhu

IPC分类号： H01L21/762

CPC分类号： H01L21/76224 ,  H01L21/7624 ,  H01L27/10844 ,  H01L27/11521 ,  H01L29/7833

摘要： A method suitable for use during fabrication of a semiconductor device such as a dynamic random access memory or a flash programmable read-only memory comprises etching through silicon nitride and pad oxide layers and into a semiconductor wafer to form a trench into the wafer. A shallow trench isolation (STI) layer is formed in the opening in the silicon nitride and in the trench in the wafer which will, under certain conditions, form with an undesirable void. The silicon nitride and pad oxide layers are removed, then an epitaxial silicon layer is formed on the silicon wafer between the STI. A gate/tunnel oxide layer is formed on the epitaxial silicon layer, then a word line is formed over the gate/tunnel oxide. The epitaxial silicon layer ensures that some minimum distance is maintained between the gate/tunnel oxide and the void in the STI. Wafer processing may then be continued to form a completed semiconductor device.

摘要翻译： 适用于半导体器件（例如动态随机存取存储器或闪存可编程只读存储器）的制造期间使用的方法包括通过氮化硅和衬垫氧化物层蚀刻到半导体晶片中以在晶片中形成沟槽。 在硅氮化物的开口和晶片的沟槽中形成浅沟槽隔离（STI）层，这将在某些条件下形成不期望的空隙。 去除氮化硅和衬垫氧化物层，然后在STI之间的硅晶片上形成外延硅层。 在外延硅层上形成栅极/隧道氧化物层，然后在栅极/隧道氧化物上形成字线。 外延硅层确保在栅极/隧道氧化物和STI中的空隙之间保持一些最小距离。 然后可以继续晶片处理以形成完整的半导体器件。

公开(公告)号：US08598041B2

公开(公告)日：2013-12-03

申请号：US13447520

申请日：2012-04-16

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/302

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

公开(公告)号：US20110269252A1

公开(公告)日：2011-11-03

申请号：US13179851

申请日：2011-07-11

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/66

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

摘要翻译： 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US07560390B2

公开(公告)日：2009-07-14

申请号：US11144543

申请日：2005-06-02

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/302

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

摘要翻译： 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替层，无定形碳沉积在剩余的间隔物周围，随后在无定形碳上形成一对间隔物的多个循环，去除一对隔离物中的一个并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US20120202350A1

公开(公告)日：2012-08-09

申请号：US13447520

申请日：2012-04-16

申请人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

发明人： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC分类号： H01L21/302

CPC分类号： H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

摘要翻译： 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US10515801B2

公开(公告)日：2019-12-24

申请号：US12908206

申请日：2010-10-20

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

摘要： Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.

公开(公告)号：US09196753B2

公开(公告)日：2015-11-24

申请号：US13089648

申请日：2011-04-19

申请人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

发明人： D. V. Nirmal Ramaswamy ,  Gurtej Sandhu

IPC分类号： H01L27/108 ,  H01L29/872 ,  H01L27/28 ,  H01L45/00 ,  H01L27/102 ,  H01L29/885 ,  H01L27/22 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L29/872 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/285 ,  H01L29/885 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

摘要： Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

摘要翻译： 为选择装置提供方法，装置和系统，所述选择装置可以包括形成在第一电极上的至少一个半导体材料的半导体叠层，其中半导体叠层可以具有约700埃（或更小）的厚度。 所述至少一个半导体材料中的每一个可以具有约4电子伏（eV）或更小的相关带隙，并且可以在半导体叠层上形成第二电极。

公开(公告)号：US08946907B2

公开(公告)日：2015-02-03

申请号：US13526225

申请日：2012-06-18

申请人： Gurtej Sandhu

发明人： Gurtej Sandhu

IPC分类号： H01L23/52 ,  H01L21/311 ,  H01L21/033

CPC分类号： H01L23/5226 ,  H01L21/0337 ,  H01L21/31144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.

摘要翻译： 提供了一种用于在半导体组件中产生结构的方法。 该方法包括将孔蚀刻到电介质层中，并在该介电层上施加聚合物层。 均匀地施加聚合物层，并根据孔的几何形状，或者存在或不存在生长促进材料，以不同的速率填充孔。 该聚合物产生用于蚀刻间隔物之间​​的附加结构的间隔物。 该方法能够实现比当前光刻技术更小的结构。