公开(公告)号：US09837579B2

公开(公告)日：2017-12-05

申请号：US14604453

申请日：2015-01-23

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Shun Kitahama

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L33/52

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

公开(公告)号：US20160190394A1

公开(公告)日：2016-06-30

申请号：US14979990

申请日：2015-12-28

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Yasuhiro Miki

IPC: H01L33/42 ,  H01L33/56 ,  H01L33/44 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/56 ,  H01L33/44 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.

Abstract translation: 发光元件包括具有上表面的n型半导体层; 在n型半导体层的上表面的一部分上的p型半导体层，p型半导体层具有上表面; 连续地覆盖n型半导体层和p型半导体层的保护膜，在n型半导体层的上表面形成n侧开口的保护膜和在n型半导体层的上表面的p侧开口 p型半导体层; 在p侧开口露出的p型半导体层的上表面上的p侧电极; 在n侧开口处露出的n型半导体层的上表面上的n侧电极，具有n侧透光电极的n侧电极; 以及在n侧透光电极的上表面上的n侧焊盘电极。

公开(公告)号：US10381516B2

公开(公告)日：2019-08-13

申请号：US15216402

申请日：2016-07-21

Applicant: NICHIA CORPORATION

Inventor： Yohei Wakai ,  Masahiko Onishi

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/44 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/38 ,  H01L33/24 ,  H01L33/58

Abstract: A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.

公开(公告)号：US10026879B2

公开(公告)日：2018-07-17

申请号：US14979990

申请日：2015-12-28

Applicant: NICHIA CORPORATION

Inventor： Masahiko Onishi ,  Yasuhiro Miki

IPC: H01L33/00 ,  H01L33/56 ,  H01L33/44 ,  H01L33/58

Abstract: A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode.

公开(公告)号：US08969898B2

公开(公告)日：2015-03-03

申请号：US13772562

申请日：2013-02-21

Applicant: Nichia Corporation

Inventor： Masahiko Onishi ,  Shun Kitahama

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/40 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0016

Abstract: In a method for producing a semiconductor light emitting device: a semiconductor lamination of first and second semiconductor layers having different conductive types is formed; a portion of the semiconductor lamination is removed to expose an area of a surface of the first semiconductor layer; a conductor layer connecting the first and second semiconductor layers is formed; a first electrode is formed on the exposed areas of the first semiconductor layer and a second electrode is formed on an upper surface of the second semiconductor layer; a barrier layer covering at least one of the first and second electrodes is formed; and a connection part in the conductor layer connecting the first and second semiconductor layers is removed.

Abstract translation: 在制造半导体发光器件的方法中，形成具有不同导电类型的第一和第二半导体层的半导体层叠体; 去除半导体层叠的一部分以暴露第一半导体层的表面的区域; 形成连接第一和第二半导体层的导体层; 第一电极形成在第一半导体层的暴露区域上，第二电极形成在第二半导体层的上表面上; 形成覆盖第一和第二电极中的至少一个的阻挡层; 并且去除连接第一和第二半导体层的导体层中的连接部分。