Socket assembly with vacuum pickup cap
    1.
    发明授权
    Socket assembly with vacuum pickup cap 失效
    带真空吸头帽的插座组件

    公开(公告)号:US06821127B2

    公开(公告)日:2004-11-23

    申请号:US10287932

    申请日:2002-11-04

    IPC分类号: H01R1306

    CPC分类号: H05K13/0409 Y10S439/94

    摘要: A socket assembly (1) includes a socket (2) and a vacuum pickup cap (3). The socket includes a base (20), a cover (21) movably assembled upon the base and an actuating rod (22) assembled on both the base and the cover for driving the cover to move in relative to the base. The cover defines a through hole (200) in a center thereof. The vacuum pickup cap includes a flexible bottom plate (31) and a flexible film (32). The flexible bottom plate has a sticky bottom surface (310) adhered to an upper surface of the cover and covering the through hole of the cover. The flexible film has a sticky bottom surface (320) adhered to the flexible bottom plate and a smooth upper surface (321) adapted for being sucked by a vacuum pickup device.

    摘要翻译: 插座组件(1)包括插座(2)和真空拾取盖(3)。 插座包括基座(20),可移动地组装在基座上的盖(21)和组装在基座和盖两者上的驱动杆(22),用于驱动盖相对于基座移动。 该盖在其中心形成通孔(200)。 真空拾取盖包括柔性底板(31)和柔性膜(32)。 柔性底板具有粘附到盖的上表面并覆盖盖的通孔的粘性底表面(310)。 柔性膜具有粘附到柔性底板的粘性底表面(320)和适于被真空拾取装置吸入的光滑上表面(321)。

    Method for fabricating liquid crystal (LC) alignment
    2.
    发明申请
    Method for fabricating liquid crystal (LC) alignment 有权
    液晶(LC)校准方法

    公开(公告)号:US20080030673A1

    公开(公告)日:2008-02-07

    申请号:US11882652

    申请日:2007-08-03

    IPC分类号: G02F1/1337

    CPC分类号: G02F1/1337

    摘要: A method for fabricating liquid crystal (LC) alignment includes the steps of processing an alignment film having a plurality of liquid crystal molecules with a single or plurality of plasma generating devices, such that the liquid crystal molecules are aligned at a high pretilt angle. Compared with the prior art, the present invention is suitable for modifying the alignment film surface adjustablely in directions and angles, and can attain the effect of alignment stability with a high pretilt angle in a single process, thus overcoming the drawbacks of the prior art.

    摘要翻译: 制造液晶(LC)取向的方法包括以下步骤:利用单个或多个等离子体产生装置处理具有多个液晶分子的取向膜,使得液晶分子以高预倾角对准。 与现有技术相比,本发明适用于在方向和角度上可调整的取向膜表面,并且可以在单一工艺中以高预倾角获得对准稳定性的效果,从而克服了现有技术的缺点。

    Film coating system and isolating device thereof
    3.
    发明授权
    Film coating system and isolating device thereof 有权
    薄膜涂布系统及其隔离装置

    公开(公告)号:US08316796B2

    公开(公告)日:2012-11-27

    申请号:US11954843

    申请日:2007-12-12

    IPC分类号: C23C16/00

    摘要: A film coating system for coating an object includes a working station and an isolating device. The object is disposed on the working station, and the isolating device is utilized to isolate the object. The isolating device includes a body generating a first power, a first working fluid, a second working fluid, a first guiding portion and a second guiding portion. The first guiding portion guides the first working fluid to pass through the body, thereby forming a first working region to coat the object thereon. The second guiding portion guides the second working fluid excited by the first power of the body to pass through the body, thereby forming a second working region to separate the first working region from the object.

    摘要翻译: 用于涂覆物体的涂膜系统包括加工台和隔离装置。 物体设置在工作站上,隔离装置用于隔离物体。 隔离装置包括产生第一功率的主体,第一工作流体,第二工作流体,第一引导部分和第二引导部分。 第一引导部引导第一工作流体穿过主体,从而形成第一工作区域以在其上涂覆物体。 第二引导部分引导由身体的第一功率激发的第二工作流体穿过主体,从而形成第二工作区域以将第一工作区域与物体分开。

    Surface treating device and surface treating method
    4.
    发明授权
    Surface treating device and surface treating method 有权
    表面处理装置及表面处理方法

    公开(公告)号:US08277616B2

    公开(公告)日:2012-10-02

    申请号:US11892853

    申请日:2007-08-28

    IPC分类号: B01J19/08

    摘要: A surface treating method for treating a tooth surface and a surface treating device thereof are provided. First, a working gas is filled into a tube. Next, a voltage is provided to the working gas for exciting the working gas into plasma. After that, the plasma is discharged through an opening of the tube for contacting the tooth surface.

    摘要翻译: 提供了一种用于处理牙齿表面的表面处理方法及其表面处理装置。 首先,将工作气体填充到管中。 接下来,向工作气体提供用于将工作气体激发成等离子体的电压。 之后,等离子体通过用于与齿面接触的管的开口排出。

    PLASMA SYSTEM
    6.
    发明申请
    PLASMA SYSTEM 有权
    等离子体系

    公开(公告)号:US20100098600A1

    公开(公告)日:2010-04-22

    申请号:US12388552

    申请日:2009-02-19

    IPC分类号: B01J19/08

    CPC分类号: H05H1/2406 H05H2001/2456

    摘要: A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.

    摘要翻译: 产生用于产生等离子体的等离子体系统。 等离子体系包括管,正极和负极。 管具有等离子体射流开口,第一端面和第二端面。 等离子体射流开口穿过管的壁。 等离子体通过等离子体射流开口并被发射到管的外部。 正极具有面向和邻近管的侧表面。 负极与正极分离第一预定距离。 负极具有面对并与管相邻的负极侧面。 第一正极和第一负极设置在第一端面和第二端面之间,等离子体喷射口的一部分配置在正极和负极之间。

    METHOD AND APPARATUS FOR DEPOSITION OF SELENIUM THIN-FILM AND PLASMA HEAD THEREOF
    7.
    发明申请
    METHOD AND APPARATUS FOR DEPOSITION OF SELENIUM THIN-FILM AND PLASMA HEAD THEREOF 审中-公开
    用于沉积薄膜和其等离子体头的方法和装置

    公开(公告)号:US20120315724A1

    公开(公告)日:2012-12-13

    申请号:US13230788

    申请日:2011-09-12

    IPC分类号: H01L21/06 C23C16/50

    摘要: A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state selenium source is dissociated by the plasma head to deposit the selenium thin-film on the substrate. The plasma head includes a chamber, a housing and the solid-state selenium source. Plasma is produced in the chamber. The chamber is surrounded by the housing. The solid-state selenium source is supported by the housing.

    摘要翻译: 一种沉积硒薄膜的方法包括以下步骤。 首先,提供等离子体头。 然后,在大气压下负载基板。 接下来,固体硒源通过等离子体头解离,以将硒薄膜沉积在基底上。 等离子体头包括腔室,壳体和固态硒源。 等离子体在室内产生。 房间被房屋包围。 固态硒源由壳体支撑。

    PROCESSING SYSTEM AND PLASMA GENERATION DEVICE
    8.
    发明申请
    PROCESSING SYSTEM AND PLASMA GENERATION DEVICE 审中-公开
    处理系统和等离子体生成装置

    公开(公告)号:US20080066679A1

    公开(公告)日:2008-03-20

    申请号:US11564826

    申请日:2006-11-29

    IPC分类号: C23F1/00 C23C16/00

    摘要: A processing system is used for processing an object by a first fluid. The processing system includes a base and a plasma generation device. The base supports the object and the plasma generation device ionizes the first fluid. The plasma generation device includes at least one guiding element comprising a path guiding the first fluid to sequentially flow through a first position and a second position and at least one electrode element including a first electrode corresponding to the first position and a second electrode corresponding to the second position. The first and second electrodes energize the first fluid located between the first and second electrodes to form a second fluid, to thereby utilize the second fluid to perform surfacing, activating, cleaning, photoresist ashing or etching process on the object supported by the base.

    摘要翻译: 处理系统用于通过第一流体处理物体。 处理系统包括基座和等离子体产生装置。 基座支撑物体,等离子体发生装置离子化第一流体。 等离子体产生装置包括至少一个引导元件,该引导元件包括引导第一流体顺序地流过第一位置和第二位置的路径,以及包括对应于第一位置的第一电极和对应于第一位置的第二电极的至少一个电极元件 第二名 第一和第二电极激励位于第一和第二电极之间的第一流体以形成第二流体,从而利用第二流体对由基座支撑的物体进行表面,活化,清洁,光致抗蚀剂灰化或蚀刻过程。

    Plasma system
    9.
    发明授权
    Plasma system 有权
    等离子体系

    公开(公告)号:US08092750B2

    公开(公告)日:2012-01-10

    申请号:US12388552

    申请日:2009-02-19

    IPC分类号: H05H1/24

    CPC分类号: H05H1/2406 H05H2001/2456

    摘要: A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.

    摘要翻译: 产生用于产生等离子体的等离子体系统。 等离子体系包括管,正极和负极。 管具有等离子体射流开口,第一端面和第二端面。 等离子体射流开口穿过管的壁。 等离子体通过等离子体射流开口并被发射到管的外部。 正极具有面向和邻近管的侧表面。 负极与正极分离第一预定距离。 负极具有面对并与管相邻的负极侧面。 第一正极和第一负极设置在第一端面和第二端面之间,等离子体喷射口的一部分配置在正极和负极之间。

    Plasma System with Injection Device
    10.
    发明申请
    Plasma System with Injection Device 审中-公开
    带注射装置的等离子体系统

    公开(公告)号:US20110100556A1

    公开(公告)日:2011-05-05

    申请号:US12647041

    申请日:2009-12-24

    IPC分类号: C23F1/08 C23C16/00

    摘要: A plasma system with an injection device is provided. The plasma system comprises a plasma cavity and an injection device. The plasma cavity comprises a first electrode and a second for generating plasma. The injection device comprises a plasma injection tube and at least a reactant injection tube. The plasma injection tube is connected to the plasma cavity. The plasma injection tube comprises an inlet, an outlet and an outer sidewall. The plasma injection tube injects the plasma from the inlet and guides the plasma out through the outlet. The outer sidewall has a width decreasing from the inlet to the outlet. The reactant injection tube is disposed outside of the outer sidewall. The reactant injection tube injects a reactant to the outer sidewall so that the reactant flows along the outer sidewall toward the outlet and mixes with the plasma at the outlet.

    摘要翻译: 提供了具有注射装置的等离子体系统。 等离子体系统包括等离子体腔和注射装置。 等离子体空腔包括用于产生等离子体的第一电极和第二电极。 注射装置包括等离子体注入管和至少反应物注射管。 等离子体注入管连接到等离子体腔。 等离子体注入管包括入口,出口和外侧壁。 等离子体注入管从入口注入等离子体并将等离子体引出通过出口。 外侧壁的宽度从入口到出口减小。 反应物注入管设置在外侧壁的外侧。 反应物注射管将反应物注射到外侧壁,使得反应物沿着外侧壁朝向出口流动并与出口处的等离子体混合。