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    Process for preparing magnetic disk
    4.
    发明授权
    Process for preparing magnetic disk 失效
    磁盘制作工艺

    公开(公告)号：US5209837A

    公开(公告)日：1993-05-11

    申请号：US735945

    申请日：1991-07-25

    申请人： Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

    发明人： Noboru Tsuya ,  Tadao Tokushima ,  Toshiro Takahashi

    IPC分类号： G11B5/73 ,  G11B5/84

    CPC分类号： G11B5/84 ,  G11B5/73

    摘要： This invention relates to a process for preparing a magnetic disk, which comprises (a) subjecting a substrate having an anodized aluminum film to mirror surface-finishing, (b) widening pores of the anodized aluminum film by chemical dissolution treatment so that the total area of pores becomes from 20 to 80% of the entire surface area, thereby retaining crystalline alumina of the anodized aluminum film extruded after the chemical dissolution treatment, and (c) coating the resultant substrate with a magnetic continuous thin film.

    摘要翻译： 本发明涉及一种制备磁盘的方法，该方法包括：（a）对具有阳极氧化铝膜的基板进行镜面整理，（b）通过化学溶解处理使阳极氧化铝膜的孔扩大，使得总面积 的孔变成整个表面积的20至80％，从而保持化学溶解处理后挤出的阳极化铝膜的结晶氧化铝，（c）用磁性连续薄膜涂覆所得基材。

    Substrate for magnetic recording medium and process of producing the same
    6.
    发明授权
    Substrate for magnetic recording medium and process of producing the same 失效
    磁记录介质用基板及其制造方法

    公开(公告)号：US5277960A

    公开(公告)日：1994-01-11

    申请号：US872167

    申请日：1992-04-22

    申请人： Noboru Tsuya ,  Toshiro Takahashi

    发明人： Noboru Tsuya ,  Toshiro Takahashi

    IPC分类号： G11B5/66 ,  G11B5/73 ,  G11B5/82 ,  G11B5/84 ,  B32B3/30 ,  B32B15/08

    CPC分类号： G11B5/7315 ,  G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/24612 ,  Y10T428/31678

    摘要： The first invention provides a substrate for a magnetic recording medium, which is prepared by forming a macro-concavo-convex pattern for improving CSS properties and a micro-concavo-convex pattern for improving magnetic properties on the surface, thereby preventing the degradation of the CSS properties brought by the enhancement in friction coefficient and the increase in the area of a protective layer of the medium in contact with a magnetic head, caused by the wearing of the protective layer of the medium.The second invention provides a process of producing a substrate for a magnetic recording medium, which forms the above macro-concavo-convex pattern and micro-concavo-convex pattern in a uniform distribution at the same time.The first invention utilizes, as the texture, protrusions 13P and 15P different in length from the substrate surface, the protrusions being prepared by packing at least two kinds of materials 13 and 15 differing in etching rate into alumite pores 14A and 14B, polishing and then etching.The second process invention comprises the steps of packing the first material into alumite pores of an aluminum alloy by means of electrolytic deposition, packing the second material having an etching rate different from that of the first material by means of dipping method, polishing the resultant surface and etching the polished surface so as to make the respective protrusion lengths of the first and the second materials within the predetermined range.

    摘要翻译： 第一发明提供了一种用于磁记录介质的基板，其通过形成用于改善CSS性质的宏观凹凸图案和用于改善表面上的磁性能的微凹凸图案来制备，从而防止了 通过介质的保护层的磨损而引起的摩擦系数的增强和与磁头接触的介质的保护层的面积增加引起的CSS性质。 第二发明提供了一种制造用于磁记录介质的衬底的方法，其同时形成均匀分布的上述宏观凹凸图案和微凹凸图案。 第一发明利用了与基板表面不同长度的突起13P和15P作为纹理，通过将蚀刻速率不同的至少两种材料13和15填充到耐氧化铝孔14A和14B中来进行抛光，然后抛光 蚀刻。 第二工艺方法包括以下步骤：通过电解沉积将第一种材料包装到铝合金的防氧化铝孔中，通过浸渍法将具有不同于第一种材料的蚀刻速率的第二种材料包装， 并且蚀刻抛光表面以使第一和第二材料的相应突出长度在预定范围内。

    High silicon steel thin strips and a method for producing the same
    7.
    发明授权
    High silicon steel thin strips and a method for producing the same 失效
    高硅钢薄带及其制造方法

    公开(公告)号：US4265682A

    公开(公告)日：1981-05-05

    申请号：US974506

    申请日：1978-12-29

    申请人： Noboru Tsuya ,  Kenichi Arai

    发明人： Noboru Tsuya ,  Kenichi Arai

    IPC分类号： B22D11/06 ,  C21D6/00 ,  C22C38/02 ,  H01F1/153 ,  H01F1/04

    CPC分类号： H01F1/15341 ,  B22D11/06 ,  C21D6/008 ,  C22C38/02

    摘要： A high silicon steel strip having excellent magnetic properties and good workability, and having a composition consisting of 4-10% by weight of silicon and the remainder being substantially iron and incidental impurities is produced by cooling super rapidly the high silicon steel melt on a cooling substrate to form a thin strip having micro-structure comprising very fine crystal grains having substantially no ordered lattice.

    摘要翻译： 具有优异的磁性能和良好的加工性的高硅钢带，其组成由4-10重量％的硅组成，其余部分基本上是铁和附带的杂质，通过冷却来快速冷却高硅钢熔体 衬底以形成具有微结构的薄带，其包括基本上没有有序晶格的非常细的晶粒。

    Process of producing silicon ribbon with p-n junction
    8.
    发明授权
    Process of producing silicon ribbon with p-n junction 失效
    用p-n结生产硅带的工艺

    公开(公告)号：US4523966A

    公开(公告)日：1985-06-18

    申请号：US650569

    申请日：1984-09-13

    申请人： Noboru Tsuya ,  Kenichi Arai ,  Toshio Takeuchi

    发明人： Noboru Tsuya ,  Kenichi Arai ,  Toshio Takeuchi

    IPC分类号： H01L31/04 ,  C30B11/00 ,  H01L21/18 ,  H01L21/208

    CPC分类号： C30B29/06 ,  C30B11/00 ,  C30B11/001 ,  C30B29/60 ,  C30B29/605 ,  Y10S428/939 ,  Y10T428/12528

    摘要： The disclosed process produces a silicon ribbon wafer with a p-n junction, by melting a raw silicon material, ejecting the molten silicon material onto a rotary cooling member so as to produce a silicon ribbon wafer through super-rapid cooling, and applying an impurity element whose polarity is opposite to that of the raw silicon material onto the thus formed silicon ribbon wafer at a temperature of not lower than 600.degree. C. and cooled from said temperature, whereby a p-n junction is formed in the silicon ribbon wafer simultaneously with the production of the fully solidified silicon ribbon wafer.

    摘要翻译： 所公开的方法通过熔化原料硅产生具有pn结的硅带晶片，将熔融硅材料喷射到旋转冷却构件上，以通过超快速冷却来生产硅带晶片，并施加杂质元素， 极性与原硅材料的温度相反，在不低于600℃的温度下在这样形成的硅带晶片上，并从所述温度冷却，由此在硅带晶片中形成pn结，同时生产 完全固化的硅带晶片。

    Method of manufacturing a thin ribbon wafer of semiconductor material
    9.
    发明授权
    Method of manufacturing a thin ribbon wafer of semiconductor material 失效
    制造半导体材料的薄带晶片的方法

    公开(公告)号：US4525223A

    公开(公告)日：1985-06-25

    申请号：US597565

    申请日：1984-04-09

    申请人： Noboru Tsuya ,  Kenichi Arai

    发明人： Noboru Tsuya ,  Kenichi Arai

    IPC分类号： C30B11/00 ,  C30B15/06 ,  C30B29/64 ,  H01L29/04 ,  H01L31/0368 ,  H01L31/18 ,  H01L21/208

    CPC分类号： H01L31/182 ,  C30B11/00 ,  C30B11/001 ,  C30B11/002 ,  C30B11/007 ,  C30B15/06 ,  C30B29/605 ,  H01L29/04 ,  H01L31/03682 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S117/914 ,  Y10S428/939 ,  Y10T428/12528

    摘要： A novel thin ribbon wafer of semiconductor having a polycrystalline structure composed of more than 50% of a grain having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, sufficient flexibility to be windable on a pipe having a diameter of 34 mm, malleability, and composed from p-type, i-type or n-type semiconductor material, and the composite clad of at least two elements thereof so as to form a p-n type junction. The composition of said semiconductor material consists of pure silicon or silicon with additional elements for improving the properties of a semiconductor; said additional element being at least one element in a proportion of less than 10 atomic % as compared to said silicon, said element selected from the group consisting of non-metallic elements such as hydrogen, phosphorus, sulfur and oxygen; semi-metallic elements such as boron, arsenic, tellurium, tin and selenium; metallic elements such as aluminum, gallium, indium, chromium, silver, iron and bismuth; and mixtures thereof with at least one element having smaller solubility limit than that of silicon. A method of manufacturing a thin ribbon wafer of composite clad of semiconductor material is also disclosed. Said flexible thin ribbon wafer of semiconductor is available for use as/or in a semiconductor electronic device.

    摘要翻译： 一种新型的半导体薄带晶片，具有多晶结构，该多晶结构由超过50％的晶粒尺寸大于5μm的晶粒构成，厚度为5至200μm，足够的柔性可在具有 直径为34mm，可延展性，由p型，i型或n型半导体材料构成，并且复合包层至少包含两个元件，以形成pn型结。 所述半导体材料的组成由具有用于改善半导体性质的附加元素的纯硅或硅组成; 所述附加元素是与所述硅相比小于10原子％的比例的至少一种元素，所述元素选自非金属元素如氢，磷，硫和氧; 半金属元素如硼，砷，碲，锡和硒; 金属元素如铝，镓，铟，铬，银，铁和铋; 以及它们与至少一种具有比硅的溶解度极限小的元素的混合物。 还公开了制造半导体材料的复合包覆薄带晶片的方法。 半导体的所述柔性薄带晶片可用于或在半导体电子器件中使用。

    Thin ribbon of semiconductor material
    10.
    发明授权
    Thin ribbon of semiconductor material 失效
    薄带半导体材料

    公开(公告)号：US4682206A

    公开(公告)日：1987-07-21

    申请号：US721675

    申请日：1985-04-10

    申请人： Noboru Tsuya ,  Kenichi Arai

    发明人： Noboru Tsuya ,  Kenichi Arai

    IPC分类号： C30B11/00 ,  C30B15/06 ,  C30B29/64 ,  H01L29/04 ,  H01L31/0368 ,  H01L31/18

    CPC分类号： H01L31/182 ,  C30B11/00 ,  C30B11/001 ,  C30B11/002 ,  C30B11/007 ,  C30B15/06 ,  C30B29/605 ,  H01L29/04 ,  H01L31/03682 ,  Y02E10/546 ,  Y02P70/521 ,  Y10S117/914 ,  Y10S428/939 ,  Y10T428/12528

    摘要： A novel thin ribbon of semiconductor has a polycrystalline structure composed more than 50% of grains having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, a sufficient flexibility to be windable on a pipe having a diameter of 34 mm, and malleability. The semiconductor is composed of p-type, i-type or n-type semiconductor material, and may be a two-layer composite formed of at least two elements so as to form a p-n type junction. The composition of the semiconductor material consists of pure silicon or silicon with an additional impurity element for improving the properties of the semiconductor, the additional impurity element being selected from the group consisting of hydrogen, phosphorus, sulfur, oxygen, boron, arsenic, tellurium, tin, selenium, aluminum, gallium, indium, chromium, silver, iron and bismuth. A method of manufacturing a thin ribbon of a two-layer composite of semiconductor material is also disclosed. The flexible thin ribbon of semiconductor is available for use as/or in a semiconductor electronic device.

    摘要翻译： 一种新颖的半导体薄带具有多晶结构，该多晶结构由超过50％的晶粒尺寸大于5μm，厚度为5至200μm的晶粒构成，具有足够的挠曲性可在具有直径为 34毫米，延展性。 半导体由p型，i型或n型半导体材料构成，并且可以是由至少两个元素形成的两层复合材料，以便形成p-n型结。 半导体材料的组成由具有用于改善半导体性质的附加杂质元素的纯硅或硅组成，附加的杂质元素选自氢，磷，硫，氧，硼，砷，碲， 锡，硒，铝，镓，铟，铬，银，铁和铋。 还公开了制造半导体材料的双层复合材料的薄带的方法。 半导体的柔性薄带可用于/或用于半导体电子器件。