公开(公告)号：US08168518B2

公开(公告)日：2012-05-01

申请号：US12600595

申请日：2008-04-30

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

IPC分类号： H01L21/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02683 ,  H01L27/1281 ,  H01L27/1285

摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.

摘要翻译： 在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。 通过缓冲层（17）在其上形成光吸收层（19）。 能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。 这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a） ）和氧化反应的热量。 这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

公开(公告)号：US08518756B2

公开(公告)日：2013-08-27

申请号：US13441556

申请日：2012-04-06

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

IPC分类号： H01L21/00

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02683 ,  H01L27/1281 ,  H01L27/1285

摘要： A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.

摘要翻译： 一种使薄膜结晶的方法在基板上形成的覆盖栅电极的栅极绝缘膜。 通过缓冲层在其上形成光吸收层。 能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层。 这仅退光到光吸收层Lh的表面侧，并且产生通过使用在光吸收层处的能量线Lh的热转化和退火反应的热而产生的热而使非晶硅膜结晶而获得的结晶硅膜。

公开(公告)号：US20100159619A1

公开(公告)日：2010-06-24

申请号：US12600595

申请日：2008-04-30

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Goh Matsunobu ,  Yoshio Inagaki ,  Koichi Tatsuki ,  Shin Hotta ,  Katsuya Shirai

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/30

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02683 ,  H01L27/1281 ,  H01L27/1285

摘要： A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.

摘要翻译： 在基板（1）上形成栅极绝缘膜（13）以覆盖栅电极（11），并且进一步形成非晶硅膜（半导体薄膜）（15）。 通过缓冲层（17）在其上形成光吸收层（19）。 能量线Lh由诸如半导体激光器的连续波激光器施加到光吸收层（19）。 这仅氧化光吸收层Lh的表面侧，并且产生通过使用在光吸收层（19）处的能量线Lh的热转换产生的热而使非晶硅膜（15）结晶而获得的美丽的晶体硅膜（15a） ）和氧化反应的热量。 这提供了一种以较简单的工艺以低成本使具有良好可控性的薄膜结晶的方法。

公开(公告)号：US07820531B2

公开(公告)日：2010-10-26

申请号：US12247370

申请日：2008-10-08

申请人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

发明人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： B23K26/032 ,  B23K26/0006 ,  B23K2103/172 ,  B23K2103/54 ,  B23K2103/56 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/3244 ,  H01L51/0005 ,  H01L2251/5315

摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。 在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化 在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量 导致第一方向，并且在第二方向上的测量结果位于预定范围内。

公开(公告)号：US20090095962A1

公开(公告)日：2009-04-16

申请号：US12247370

申请日：2008-10-08

申请人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

发明人： Goh Matsunobu ,  Koichi Tatsuki ,  Yoshio Inagaki ,  Nobuhiko Umezu ,  Koichi Tsukihara

IPC分类号： H01L33/00 ,  H01L21/00 ,  A61N5/00

CPC分类号： B23K26/032 ,  B23K26/0006 ,  B23K2103/172 ,  B23K2103/54 ,  B23K2103/56 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/3244 ,  H01L51/0005 ,  H01L2251/5315

摘要： A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过施加激光束来修改半导体膜; 以及在所述改性半导体膜上形成半导体器件。 在修改半导体膜的步骤中，激光束和衬底在与第一方向相反的第一方向和第二方向上相对于彼此移动，激光照射的区域之间的光学特性的变化 在第一和第二方向中的每一个中测量光束和在基板中不被激光束照射的区域或照射区域的光学特性，并且调制激光束的照射功率，使得测量 导致第一方向，并且在第二方向上的测量结果位于预定范围内。

公开(公告)号：US08193008B2

公开(公告)日：2012-06-05

申请号：US12468969

申请日：2009-05-20

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Hirohisa Amago ,  Go Matsunobu ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Hirohisa Amago ,  Go Matsunobu ,  Katsuya Shirai

IPC分类号： H01L21/66

CPC分类号： G01N21/956 ,  G01N2021/9513 ,  H01L21/02532 ,  H01L21/02675 ,  H01L22/12 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78678

摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.

摘要翻译： 一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过对所述非晶半导体薄膜施加激光以选择性地对所述非晶半导体薄膜进行加热处理，从而在每个元件区域中部分地形成晶体半导体薄膜，从而使所述非晶半导体薄膜在被所述激光照射的区域中结晶。 并检查结晶半导体薄膜的结晶度。 检查步骤包括以下步骤：通过向结晶半导体薄膜和非晶半导体薄膜施加光来确定结晶区域的亮度与非结晶区域的亮度之间的对比度，并且执行晶体半导体 薄膜在确定的对比的基础上。

公开(公告)号：US20090291511A1

公开(公告)日：2009-11-26

申请号：US12468969

申请日：2009-05-20

申请人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Hirohisa Amago ,  Go Matsunobu ,  Katsuya Shirai

发明人： Nobuhiko Umezu ,  Koichi Tsukihara ,  Hirohisa Amago ,  Go Matsunobu ,  Katsuya Shirai

IPC分类号： H01L21/66 ,  H01L21/20 ,  G01N21/59

CPC分类号： G01N21/956 ,  G01N2021/9513 ,  H01L21/02532 ,  H01L21/02675 ,  H01L22/12 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78678

摘要： A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each element region by applying laser light to the amorphous semiconductor thin film to selectively perform a heating process on the amorphous semiconductor thin film, thereby crystallizing the amorphous semiconductor thin film in a region irradiated with the laser light; and inspecting the crystallinity degree of the crystalline semiconductor thin film. The step of inspecting includes the steps of determining a contrast between the luminance of a crystallized region and the luminance of a non-crystallized region by applying light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and performing screening of the crystalline semiconductor thin film on the basis of the determined contrast.

摘要翻译： 一种形成半导体薄膜的方法包括以下步骤：在衬底上形成非晶半导体薄膜; 通过对所述非晶半导体薄膜施加激光以选择性地对所述非晶半导体薄膜进行加热处理，从而在每个元件区域中部分地形成晶体半导体薄膜，从而使所述非晶半导体薄膜在被所述激光照射的区域中结晶。 并检查结晶半导体薄膜的结晶度。 检查步骤包括以下步骤：通过向结晶半导体薄膜和非晶半导体薄膜施加光来确定结晶区域的亮度与非结晶区域的亮度之间的对比度，并且执行晶体半导体 薄膜在确定的对比的基础上。

公开(公告)号：US20050252894A1

公开(公告)日：2005-11-17

申请号：US11177574

申请日：2005-07-08

申请人： Yutaka Imai ,  Nobuhiko Umezu ,  Akihiko Asano ,  Shin Hotta ,  Koichi Tatsuki ,  Atsushi Fukumoto ,  Shigeo Kubota

发明人： Yutaka Imai ,  Nobuhiko Umezu ,  Akihiko Asano ,  Shin Hotta ,  Koichi Tatsuki ,  Atsushi Fukumoto ,  Shigeo Kubota

IPC分类号： B23K26/06 ,  B23K26/067 ,  H01L21/20 ,  H01L21/268 ,  B23K26/02

CPC分类号： B23K26/0613 ,  B23K26/0604 ,  B23K26/0622 ,  B23K26/067 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285

摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.

摘要翻译： 激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。 照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。 激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。 参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔 原始基板温度。

公开(公告)号：US06933185B2

公开(公告)日：2005-08-23

申请号：US10394223

申请日：2003-03-24

申请人： Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

发明人： Hiroyuki Wada ,  Yoshimi Hirata ,  Ayumu Taguchi ,  Koichi Tatsuki ,  Nobuhiko Umezu ,  Shigeo Kubota ,  Tetsuo Abe ,  Akifumi Ooshima ,  Tadashi Hattori ,  Makoto Takatoku ,  Yukiyasu Sugano

IPC分类号： H01L21/263 ,  H01L21/66 ,  C30B28/02 ,  H01L21/786

CPC分类号： H01L22/12

摘要： The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

摘要翻译： 对通过非晶硅膜的准分子激光退火而形成的多晶硅膜的状态进行评价。 当非晶硅膜退火以形成多晶硅膜时，线性或周期性本身就取决于退火期间施加到非晶硅的能量而形成的多晶硅膜的膜表面的空间结构。 该线性或周期性被处理为图像并且通过利用线性或周期性从图像数字地表示。 基于数值结果检查多晶硅膜的状态。

公开(公告)号：US5862163A

公开(公告)日：1999-01-19

申请号：US847759

申请日：1997-04-23

申请人： Nobuhiko Umezu ,  Hiroyuki Wada ,  Koichi Tatsuki

发明人： Nobuhiko Umezu ,  Hiroyuki Wada ,  Koichi Tatsuki

IPC分类号： G02F1/37 ,  G02F1/35 ,  H01S3/109 ,  H01S3/10

CPC分类号： G02F1/3501 ,  G02F1/37 ,  G02F2001/3505

摘要： An apparatus for generating ultraviolet laser radiation according to the present invention includes a laser light source and a frequency conversion device made of a nonlinear optical crystal on which laser light irradiated from the laser light source is made incident and which converts a frequency of the incident laser light to thereby irradiate the ultraviolet radiation. A protective film which prevents oxygen and water content from permeating thereinto is deposited on at least an output end surface, from which ultraviolet radiation is irradiated, of the nonlinear optical crystal. Therefore, it is possible to prevent characteristics of the frequency conversion device from being lowered due to change of a property thereof resulting from increased output power of laser light and to increase a lifetime thereof.

摘要翻译： 根据本发明的用于产生紫外激光辐射的装置包括激光源和由激光光源照射的激光入射并且将入射激光器的频率转换的非线性光学晶体的变频装置 从而照射紫外线。 防止氧和水分渗透到其中的保护膜沉积在非线性光学晶体的至少一个紫外线照射的输出端表面上。 因此，可以防止由于激光的输出功率的增加而导致的变频特性而降低频率转换装置的特性并增加其寿命。