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    Superconducting logic circuit and superconducting switching device therefor
    1.
    发明授权
    Superconducting logic circuit and superconducting switching device therefor 失效
    超导逻辑电路及其超导开关器件

    公开(公告)号：US4555643A

    公开(公告)日：1985-11-26

    申请号：US391716

    申请日：1982-06-24

    申请人： Nobuo Kotera ,  Yuji Hatano ,  Atsushi Asano ,  Ushio Kawabe

    发明人： Nobuo Kotera ,  Yuji Hatano ,  Atsushi Asano ,  Ushio Kawabe

    IPC分类号： H03K17/92 ,  H03K19/195

    CPC分类号： H03K19/1956 ,  H03K17/92 ,  Y10S505/858 ,  Y10S505/861

    摘要： A superconducting logic circuit including a first power source terminal connected with a current source; a second power source terminal connected with a current sink; a first superconducting switching device connected between said first power source terminal and ground; a second superconducting switching device connected between said second power source terminal and ground; first and second resistors connected with said first and second power source terminals, respectively; and third and fourth resistors connected with the control terminals of said first and second superconducting switching devices, respectively, wherein the other terminals of said first and second resistors are connected with each other to provide a logic output terminal, and wherein the other terminals of said third and fourth resistors are connected with each other to provide a logic input terminal.

    摘要翻译： 一种超导逻辑电路，包括与电流源连接的第一电源端子; 与电流接收器连接的第二电源端子; 连接在所述第一电源端子和地之间的第一超导开关装置; 连接在所述第二电源端子和地之间的第二超导开关装置; 分别与所述第一和第二电源端子连接的第一和第二电阻器; 以及分别与所述第一和第二超导开关装置的控制端子连接的第三和第四电阻器，其中所述第一和第二电阻器的其他端子彼此连接以提供逻辑输出端子，并且其中所述第一和第二超导开关装置的其它端子 第三和第四电阻器彼此连接以提供逻辑输入端子。

    Superconducting device
    4.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5311036A

    公开(公告)日：1994-05-10

    申请号：US875431

    申请日：1992-04-29

    申请人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    发明人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    IPC分类号： H01L21/82 ,  H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

    Oxide-superconducting tunneling device formed on a submicron recess in the substrate
    5.
    发明授权
    Oxide-superconducting tunneling device formed on a submicron recess in the substrate 失效
    形成在衬底中的亚微米凹槽上的氧化物 - 超导隧穿装置

    公开(公告)号：US5198413A

    公开(公告)日：1993-03-30

    申请号：US790085

    申请日：1991-11-13

    申请人： Yoshinobu Tarutani ,  Ushio Kawabe

    发明人： Yoshinobu Tarutani ,  Ushio Kawabe

    IPC分类号： H01L39/22 ,  H01L39/24

    CPC分类号： H01L39/225 ,  H01L39/2496 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/776

    摘要： An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

    摘要翻译： 氧化物超导装置包括通过隧道势垒层连接的氧化物超导体的第一和第二电极。 氧化物超导体形成在具有凹部的基板上，并且其包括沿着凹部的晶界。 隧道势垒层沿着晶界形成，并且由元素F，Cl，Br，I，C，O，S，P或N的任何材料构成，由这些元素组成的混合物和含 这种元素，该材料被引入晶粒边界附近和/或晶粒间隙附近。

    Superconducting current detecting circuit employing DC flux parametron circuit
    7.
    发明授权
    Superconducting current detecting circuit employing DC flux parametron circuit 失效
    采用直流通量参数电路的超导电流检测电路

    公开(公告)号：US4866373A

    公开(公告)日：1989-09-12

    申请号：US291338

    申请日：1988-12-28

    申请人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

    发明人： Yutaka Harada ,  Eiichi Goto ,  Ushio Kawabe ,  Nobuo Miyamoto ,  Hideaki Nakane ,  Mutsuko Hatano

    IPC分类号： G01R17/06 ,  G01R19/00 ,  G01R19/15 ,  G01R19/257

    CPC分类号： G01R19/257 ,  G01R17/06 ,  G01R19/0092 ,  G01R19/15 ,  Y10S505/827 ,  Y10S505/845

    摘要： A superconducting current detecting circuit which comprises a reference current generation circuit for generating a reference current and a DC flux parametron circuit for comparing an input current to be detected with the reference current to thereby produce pulses in synchronism with an input excitation signal, the number of the pulses being varied in accordance with a difference between the input current and the reference current, the pulses having positive or negative values depending on the polarity of the difference, the reference current generation circuit having means for increasing or decreasing the reference current by a quantity corresponding to the number of the pulses in response to the polarity of the pulses so that reference current generation circuit produces the reference current which agrees with the input current.

    摘要翻译： 一种超导电流检测电路，包括用于产生参考电流的参考电流产生电路和用于将待检测的输入电流与参考电流进行比较的DC通量参数电路，从而产生与输入激励信号同步的脉冲， 所述脉冲根据所述输入电流和所述参考电流之间的差异而变化，所述脉冲具有取决于所述差的极性的正值或负值，所述参考电流产生电路具有用于将所述参考电流增加或减少量的装置 对应于响应于脉冲极性的脉冲数，使得参考电流产生电路产生与输入电流一致的参考电流。

    Ion beam source
    8.
    发明授权
    Ion beam source 失效
    离子束源

    公开(公告)号：US4467240A

    公开(公告)日：1984-08-21

    申请号：US344186

    申请日：1982-01-28

    申请人： Masaaki Futamoto ,  Isamu Yuito ,  Ushio Kawabe

    发明人： Masaaki Futamoto ,  Isamu Yuito ,  Ushio Kawabe

    IPC分类号： H01J1/02 ,  H01J27/00 ,  H01J27/02 ,  H01J27/26 ,  H01J37/08 ,  H01J1/16 ,  H01J19/10

    CPC分类号： H01J27/022 ,  H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807

    摘要： An ion beam source characterized in that a needle-like tip is comprised of a carbide, a nitride, or a diboride of at least one element selected from the group consisting of Ti, Zr, Hf, V, Nb and Ta, a hexaboride of at least one element of rare earth metal elements of atomic numbers 57-70, or carbon. Stable ion beam emission of high brightness and long life can be obtained by using the needle-like tip of the said material.

    摘要翻译： 一种离子束源，其特征在于针状尖端由选自Ti，Zr，Hf，V，Nb和Ta中的至少一种元素的碳化物，氮化物或二硼化物构成，六硼化物 至少一种原子数为57-70的稀土金属元素或碳。 通过使用所述材料的针状尖端可以获得高亮度和长寿命的稳定的离子束发射。

    Cathode for an electron source and a method of producing the same
    9.
    发明授权
    Cathode for an electron source and a method of producing the same 失效
    电子源用阴极及其制造方法

    公开(公告)号：US4193013A

    公开(公告)日：1980-03-11

    申请号：US897406

    申请日：1978-04-18

    申请人： Masaaki Futamoto ,  Ushio Kawabe ,  Shigeyuki Hosoki ,  Tsutomu Komoda ,  Shigehiko Yamamoto

    发明人： Masaaki Futamoto ,  Ushio Kawabe ,  Shigeyuki Hosoki ,  Tsutomu Komoda ,  Shigehiko Yamamoto

    IPC分类号： B44F1/12 ,  H01J1/15 ,  H01J1/304 ,  H01J9/02 ,  H01J9/04 ,  H01J9/18

    CPC分类号： H01J1/15 ,  H01J1/304

    摘要： A cathode for an electron source according to this invention comprises an emitter tip made of an electron emissive material, a filament for holding the emitter tip, and a binder for binding the emitter tip and the filament, the filament and the binder being made of glassy carbon. The binder can have a carbide or boride powder incorporated therein. The cathode according to this invention can be produced by using a thermosetting resin of predetermined shape as the starting material of the filament, fixing the emitter tip to a predetermined position of the thermosetting resin with the adhesive agent made of the raw thermosetting resin, and heating the resultant assembly in a non-oxidizing atmosphere to carbonize the resinous portions. This cathode is structurally very simple. Moreover, the adhesion between the filament and the emitter tip is excellent, and the emitter tip can be heated to high temperatures above 2,000.degree. C. by causing current to flow through the cathode.

    摘要翻译： 根据本发明的用于电子源的阴极包括由电子发射材料制成的发射极尖端，用于保持发射极尖端的灯丝和用于结合发射极尖端和灯丝的粘合剂，灯丝和粘合剂由玻璃状 碳。 粘合剂可以具有并入其中的碳化物或硼化物粉末。 根据本发明的阴极可以通过使用预定形状的热固性树脂作为丝的起始材料，使用由原始热固性树脂制成的粘合剂将发射极尖端固定到热固性树脂的预定位置，并加热 所得组合物在非氧化气氛中以使树脂部分碳化。 该阴极在结构上非常简单。 此外，灯丝和发射极尖端之间的粘附性优异，并且通过使电流流过阴极，可以将发射极尖端加热到高于2000℃的高温。

    Superconducting device
    10.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5442196A

    公开(公告)日：1995-08-15

    申请号：US201410

    申请日：1994-02-24

    申请人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    发明人： Toshikazu Nishino ,  Mutsuko Miyake ,  Ushio Kawabe ,  Yutaka Harada ,  Masaaki Aoki ,  Mikio Hirano

    IPC分类号： H01L21/82 ,  H01L39/22

    CPC分类号： H01L39/228 ,  H01L21/82

    摘要： A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.

    摘要翻译： 一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。 超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。 并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。