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公开(公告)号：US20110143500A1
公开(公告)日：2011-06-16
申请号：US13035273
申请日：2011-02-25
IPC分类号： H01L21/60
CPC分类号： H01L23/49524 , H01L23/4952 , H01L24/03 , H01L24/05 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/84 , H01L24/91 , H01L29/7816 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/37147 , H01L2224/40245 , H01L2224/45014 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/4903 , H01L2224/49051 , H01L2224/49171 , H01L2224/73221 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19043 , H01L2924/00 , H01L2924/00015 , H01L2924/207
摘要： There is a need for providing a technology capable of decreasing on-resistance of a power transistor in a semiconductor device that integrates the power transistor and a control integrated circuit into a single semiconductor chip. There is another need for providing a technology capable of reducing a chip size of a semiconductor device. A semiconductor chip includes a power transistor formation region to form a power transistor, a logic circuit formation region to form a logic circuit, and an analog circuit formation region to form an analog circuit. A pad is formed in the power transistor formation region. The pad and a lead are connected through a clip whose cross section is larger than that of a wire. On the other hand, a bonding pad is connected through the wire 29.
摘要翻译： 需要提供一种能够降低将功率晶体管和控制集成电路集成到单个半导体芯片的半导体器件中的功率晶体管的导通电阻的技术。 另外需要提供能够减少半导体器件的芯片尺寸的技术。 半导体芯片包括形成功率晶体管的功率晶体管形成区域，形成逻辑电路的逻辑电路形成区域和形成模拟电路的模拟电路形成区域。 在功率晶体管形成区域中形成焊盘。 焊盘和引线通过横截面大于导线的夹子连接。 另一方面，焊盘通过导线29连接。
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