公开(公告)号：US06492669B2

公开(公告)日：2002-12-10

申请号：US09892567

申请日：2001-06-28

申请人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Kazuaki Kunihiro ,  Yuji Takahashi ,  Kensuke Kasahara ,  Nobuyuki Hayama ,  Yasuo Ohno ,  Kouji Matsunaga ,  Masaaki Kuzuhara

发明人： Tatsuo Nakayama ,  Yuji Ando ,  Hironobu Miyamoto ,  Kazuaki Kunihiro ,  Yuji Takahashi ,  Kensuke Kasahara ,  Nobuyuki Hayama ,  Yasuo Ohno ,  Kouji Matsunaga ,  Masaaki Kuzuhara

IPC分类号： H01L2980

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/7783

摘要： A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electrode and a drain electrode, and a gate electrode is provided on an interposed Schottky layer. The carrier supply layer is composed of AlGaN and has tensile strain. The Schottky layer is composed of InGaN and has compressive strain. A negative piezoelectric charge is induced on the carrier supply layer side of the Schottky layer, and a positive piezoelectric charge is induced on the opposite side of the Schottky layer, whereby a sufficient Schottky barrier height is obtained and leakage current is suppressed.

摘要翻译： 在具有缓冲层的半导体器件的基板上形成载流子行进层，然后在该载体行进层上形成间隔层和载体供给层。 在载体供给层上设置有源电极和漏电极，在插入的肖特基层上设置有栅电极。 载体供应层由AlGaN组成并具有拉伸应变。 肖特基层由InGaN组成并具有压应变。 在肖特基层的载流子供给层侧感应出负的压电电荷，在肖特基层的相反侧产生正的压电电荷，由此获得足够的肖特基势垒高度，并且抑制泄漏电流。

公开(公告)号：US06465814B2

公开(公告)日：2002-10-15

申请号：US09891419

申请日：2001-06-27

申请人： Kensuke Kasahara ,  Yasuo Ohno ,  Masaaki Kuzuhara ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Kazuaki Kunihiro ,  Nobuyuki Hayama ,  Yuji Takahashi ,  Kouji Matsunaga

发明人： Kensuke Kasahara ,  Yasuo Ohno ,  Masaaki Kuzuhara ,  Hironobu Miyamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Kazuaki Kunihiro ,  Nobuyuki Hayama ,  Yuji Takahashi ,  Kouji Matsunaga

IPC分类号： H01L31072

CPC分类号： H01L29/7786 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/42316

摘要： A semiconductor device of the present invention comprises Al0.3Ga0.7N layer 4 and Al0.1Ga0.9N layer 5 having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An area where Al0.3Ga0.7N layer 4 is formed is used as a low resistance area, while an area where Al0.1Ga0.9N layer 5 is formed is used as a high resistance area. As a result, a distribution of two-dimensional electrons serving as carriers is produced within a horizontal plane perpendicular to the thickness direction of the layers to form a desired device configuration. For example, when the configuration is applied to a transistor configuration, a channel concentration under a gate is reduced to improve withstand voltage between the gate and a drain, and at the same time, a channel concentration in source and drain areas is increased to realize low contact resistance.

公开(公告)号：US06440822B1

公开(公告)日：2002-08-27

申请号：US09901424

申请日：2001-07-09

申请人： Nobuyuki Hayama ,  Masaaki Kuzuhara ,  Kouji Matsunaga ,  Tatsuo Nakayama ,  Yuji Takahashi ,  Yasuo Ohno ,  Kazuaki Kunihiro ,  Kensuke Kasahara ,  Hironobu Miyamoto ,  Yuji Ando

发明人： Nobuyuki Hayama ,  Masaaki Kuzuhara ,  Kouji Matsunaga ,  Tatsuo Nakayama ,  Yuji Takahashi ,  Yasuo Ohno ,  Kazuaki Kunihiro ,  Kensuke Kasahara ,  Hironobu Miyamoto ,  Yuji Ando

IPC分类号： H01L21301

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/3677 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At lest a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.

摘要翻译： 在制造半导体器件的方法中，沟槽部分形成在衬底的相对表面部分之一的一侧上。 每个沟槽部分的一部分由形成在基板的一个表面部分上的电源金属层覆盖。 衬底被固定到支撑件，使得衬底的一个表面适合于支撑件。 使用沟槽部分将芯片与衬底分离。 在芯片的侧表面部分和芯片的另一个表面部分上形成导电膜。 然后，芯片与支架分离。

公开(公告)号：US20090173968A1

公开(公告)日：2009-07-09

申请号：US12097700

申请日：2006-12-12

申请人： Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

发明人： Kouji Matsunaga ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Akio Wakejima ,  Yuji Ando ,  Hironobu Miyamoto ,  Takashi Inoue ,  Yasuhiro Murase

IPC分类号： H01L29/205

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device 100 contains an undoped GaN channel layer 105, an AlGaN electron donor layer 106 provided on the undoped GaN channel layer 105 as being brought into contact therewith, an undoped GaN layer 107 provided on the AlGaN electron donor layer 106, a source electrode 101 and a drain electrode 103 provided on the undoped GaN layer 107 as being spaced from each other, a recess 111 provided in the region between the source electrode 101 and the drain electrode 103, as being extended through the undoped GaN layer 107, a gate electrode 102 buried in the recess 111 as being brought into contact with the AlGaN electron donor layer 106 on the bottom surface thereof, and an SiN film 108 provided on the undoped GaN layer 107, in the region between the gate electrode 102 and the drain electrode 103.

摘要翻译： 半导体器件100包含未掺杂的GaN沟道层105，设置在与其接触的未掺杂的GaN沟道层105上的AlGaN电子供体层106，设置在AlGaN电子供体层106上的未掺杂的GaN层107，源电极 101和设置在未掺杂的GaN层107上彼此间隔开的漏电极103，设置在源电极101和漏电极103之间的区域中的凹槽111延伸穿过未掺杂的GaN层107，栅极 埋入凹槽111中的电极102与其底表面上的AlGaN电子供体层106接触，以及设置在未掺杂的GaN层107上的SiN膜108，在栅电极102和漏极之间的区域 103。

公开(公告)号：US20100155779A1

公开(公告)日：2010-06-24

申请号：US11992755

申请日：2006-09-28

申请人： Yasuhiro Murase ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Kouji Matsunaga ,  Hironobu Miyamoto

发明人： Yasuhiro Murase ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Kouji Matsunaga ,  Hironobu Miyamoto

IPC分类号： H01L29/78

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/405 ,  H01L29/66462

摘要： In a field effect transistor, a Group III nitride semiconductor layer structure containing a hetero junction, a source electrode 101 and a drain electrode 103 formed apart from each other over the Group III nitride semiconductor layer structure, and a gate electrode 102 disposed between these electrodes, are provided. Over the surface of the Group III nitride semiconductor layer structure, a SiO2 film 122 containing oxygen as a constitutive element is provided, in contact with both side faces of the gate electrode 102. Over the surface of the Group III nitride semiconductor layer structure, a SiN film 121 is provided so as to cover the region between the SiO2 film 122 and the source electrode 101, and the region between the SiO2 film 122 and the drain electrode 103. The SiN film 121 is composed of a material different from that composing the SiO2 film 122, and contains nitrogen as a constitutive element.

摘要翻译： 在场效应晶体管中，包含异质结的III族氮化物半导体层结构，在III族氮化物半导体层结构上彼此分开形成的源电极101和漏极103以及设置在这些电极之间的栅极102 ，提供。 在III族氮化物半导体层结构的表面上，提供含有氧作为构成元素的SiO 2膜122，与栅电极102的两个侧面接触。在III族氮化物半导体层结构的表面上， SiN膜121被设置为覆盖SiO 2膜122和源电极101之间的区域以及SiO 2膜122和漏电极103之间的区域。SiN膜121由与不同于构成 SiO 2膜122，并且含有氮作为构成元素。

公开(公告)号：US06821088B2

公开(公告)日：2004-11-23

申请号：US10097231

申请日：2002-03-13

申请人： Masaharu Sakai ,  Kouji Matsunaga

发明人： Masaharu Sakai ,  Kouji Matsunaga

IPC分类号： F04D2942

CPC分类号： F04D29/422

摘要： In a predetermined range from a nose portion toward a scroll finish side in a scroll casing of a centrifugal blower, a first clearance dimension on a side of a suction port between an outer periphery of a centrifugal fan and a side plate of the scroll casing is set smaller than a second clearance dimension on a side opposite to the suction port between the outer periphery of the centrifugal fan and the side plate of the scroll casing. In addition, in the vicinity of the nose portion, a first wall part of the scroll casing on the side of the suction port protrudes toward a scroll finish side, from a second wall part of the scroll casing on the side opposite to the suction port.

摘要翻译： 在离心式鼓风机的涡旋壳体中从鼻部向涡旋端面侧的预定范围内，离心风扇的外周与涡旋壳体的侧板之间的吸入口侧的第一间隙尺寸为 在与离心风扇的外周和涡旋壳体的侧板之间的吸入口相对的一侧上小于第二间隙尺寸。 此外，在鼻部附近，涡旋壳体的吸入口侧的第一壁部从涡旋壳体的与吸引口相反的一侧的第二壁部朝向涡旋端面突出 。

公开(公告)号：US06755046B2

公开(公告)日：2004-06-29

申请号：US10404730

申请日：2003-04-01

申请人： Shin Nishida ,  Masaaki Kawakubo ,  Kouji Matsunaga

发明人： Shin Nishida ,  Masaaki Kawakubo ,  Kouji Matsunaga

IPC分类号： F25B1300

CPC分类号： F25B9/008 ,  B60H1/00921 ,  B60H2001/00178 ,  B60H2001/00957 ,  B60H2001/3298 ,  F25B1/10 ,  F25B13/00 ,  F25B40/00 ,  F25B2309/061 ,  F25B2313/02321 ,  F25B2313/02331 ,  F25B2313/02341 ,  F25B2313/02344 ,  F25B2313/0314 ,  F25B2313/0315 ,  F25B2341/0012 ,  F25B2600/2513 ,  F25B2700/1931

摘要： In a vehicle air conditioner with a heat pump refrigerant cycle, an interior heat exchanger of the refrigerant cycle is disposed in an air conditioning case to heat air in a heating operation and to cool air in a cooling operation. Further, a cooling heat exchanger for cooling air by evaporating the refrigerant is disposed so that a part of refrigerant circulating in the refrigerant cycle flows into the cooling heat exchanger at least in the heating operation. In addition, a decompression unit for decompressing refrigerant flowing to the cooling heat exchanger is disposed, and the decompression unit is opened even in the cooling operation. Accordingly, dehumidifying capacity of the air conditioner can be improved while the refrigerant cycle has a simple structure.

摘要翻译： 在具有热泵制冷剂循环的车辆用空调机中，将制冷剂循环的内部热交换器设置在空调箱中，以在制热运转中加热空气，并在制冷运转中冷却空气。 此外，通过使制冷剂蒸发而冷却空气的冷却热交换器被配置成使得在制冷剂循环中的制冷剂的一部分至少在加热运转中流入冷却热交换器。 此外，设置用于对流入冷却用热交换器的制冷剂进行减压的减压单元，即使在制冷运转中，减压单元也被打开。 因此，在制冷剂循环具有简单的结构的情况下，能够提高空气调节器的除湿能力。

公开(公告)号：US06400168B2

公开(公告)日：2002-06-04

申请号：US09886033

申请日：2001-06-22

申请人： Kouji Matsunaga ,  Hirobumi Inoue ,  Masao Tanehashi ,  Toru Taura ,  Masahiko Nikaidou ,  Yuuichi Yamagishi ,  Satoshi Hayakawa

发明人： Kouji Matsunaga ,  Hirobumi Inoue ,  Masao Tanehashi ,  Toru Taura ,  Masahiko Nikaidou ,  Yuuichi Yamagishi ,  Satoshi Hayakawa

IPC分类号： G01R3102

CPC分类号： G01R1/06738 ,  G01R1/06772 ,  Y10T29/49123

摘要： In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate. Another tip portion structure is based on a coaxial cable to be cut from the center at a plane perpendicular to the axial direction thereof along one or more oblique plane. A metal ring fitted over a periphery of the coaxial outer conductor may be used.

摘要翻译： 在基本上具有基板，板簧和接地块的尖端部分结构中，将基板附着到基板的背面上的信号线上，并将其与被放置在基板上的DUT的信号电极接触 设备阶段 板簧由弹性材料制成，放置在基片的正面，并定位成对基片施加压力。 接地块位于作为DUT接地电极的信号线和器件级之间。 或者，尖端部分结构还可以具有由完全覆盖基板的前表面的导电薄板形成的接地板或接地表面，并且成形为与接地块一起包围信号线。 多个信号线可以平行布置在基板的同一平面上。 另一个尖端部分结构是基于同轴电缆，沿着一个或多个倾斜平面在垂直于其轴向方向的平面处从中心切割。 可以使用安装在同轴外导体周边上的金属环。

公开(公告)号：US20070274833A1

公开(公告)日：2007-11-29

申请号：US11888080

申请日：2007-07-31

申请人： Masaharu Sakai ,  Kouji Matsunaga ,  Yasushi Mitsuishi

发明人： Masaharu Sakai ,  Kouji Matsunaga ,  Yasushi Mitsuishi

IPC分类号： F01D1/02

CPC分类号： F04D29/30 ,  F04D29/4233

摘要： A centrifugal multi-blade fan has multiple blades about a rotational shaft and draws in air along the rotational shaft and then blows the air approximately perpendicular to the rotational shaft to reduce wind noise. A scroll casing encloses the multi-blade fan and defines a scroll-shaped airflow passage for directing the air blown from the multi-blade fan. The scroll casing has an intake opening and an outlet opening at a scroll end, in a downstream scroll casing portion. The scroll casing expands such that a flow passage cross-sectional area on the airflow downstream side is larger than that on an airflow upstream side. A ratio of a blade length to a diameter of the multi-blade fan is greater than or equal to 0.12, and an outer scroll casing radius, relative to the rotational axis, increases as a logarithmic spiral, its expansion angle being from 3.3° to 4.8°.

摘要翻译： 离心式多叶片风扇具有围绕旋转轴的多个叶片，并沿着旋转轴吸入空气，然后大致垂直于旋转轴吹送空气以减少风噪声。 涡旋壳体包围多叶片风扇并且限定用于引导从多叶片风扇吹出的空气的涡旋状气流通道。 涡旋壳体在下游涡旋壳体部分中具有在涡旋端处的进气开口和出口。 涡旋壳体膨胀，使得气流下游侧的流路横截面积大于气流上游侧的流路截面积。 叶片长度与多叶片风扇的直径的比率大于或等于0.12，并且相对于旋转轴线的外涡旋壳体半径随着对数螺旋而增加，其膨胀角为3.3°至 4.8°。

公开(公告)号：US20050230967A1

公开(公告)日：2005-10-20

申请号：US11104071

申请日：2005-04-12

申请人： Hirohisa Motomura ,  Kazuyuki Niimi ,  Kouji Matsunaga ,  Masahiro Tominaga

发明人： Hirohisa Motomura ,  Kazuyuki Niimi ,  Kouji Matsunaga ,  Masahiro Tominaga

IPC分类号： B60R16/08 ,  B60H1/00 ,  B60H1/32 ,  F16L17/00 ,  F16L23/02 ,  F16L25/00 ,  F16L55/00

CPC分类号： B60H1/3229 ,  F16L23/02

摘要： A seal structure is provided for an air conditioning unit mounted inside a passenger compartment of a vehicle and connected with pipes, which extends to the passenger compartment from an engine cabin through a pipe penetration opening of an isolation member. The seal structure includes an annular-shape pipe coupling wall formed at a case of the air conditioning unit and arranged at an outer side of a connection unit of the pipes, a first packing unit sandwiched between the pipe coupling wall and the connection unit, and a second packing unit between the isolation member and a front end of the pipe coupling wall. The second packing unit is bonded to both the first packing unit and the pipe coupling wall.

摘要翻译： 提供一种用于安装在车辆的乘客室内的空调单元的密封结构，其与管道连接，该管道通过隔离构件的管道穿透孔从发动机舱延伸到乘客舱。 密封结构包括形成在空调单元的壳体处并布置在管的连接单元的外侧的环形管连接壁，夹在管接头壁和连接单元之间的第一包装单元，以及 隔离构件和管接头壁的前端之间的第二包装单元。 第二包装单元与第一包装单元和管接头壁结合。