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公开(公告)号：US06958292B2
公开(公告)日：2005-10-25
申请号：US10364707
申请日：2003-02-12
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
IPC分类号： G03F1/54 , G03F1/56 , G03F1/62 , G03F1/68 , G03F1/70 , G03F7/00 , G03F7/20 , H01L21/027 , H01L21/44
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
摘要翻译： 为了缩短开发和制造半导体集成电路器件的周期，在通过曝光处理将集成电路图案转印到晶片上时，使用部分地设置有遮光图案3a的光掩模PM 1 由抗蚀剂膜形成，除了由金属形成的遮光图案之外。
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公开(公告)号：US06794207B2
公开(公告)日：2004-09-21
申请号：US10364706
申请日：2003-02-12
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
IPC分类号： H01L2166
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
摘要翻译： 为了缩短开发和制造半导体集成电路器件的周期，在通过曝光处理将集成电路图案转印到晶片上时，使用光掩模PM1，其部分地设置有由 除了由金属形成的遮光图案之外的抗蚀剂膜。
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公开(公告)号：US06902868B2
公开(公告)日：2005-06-07
申请号：US10311456
申请日：2001-06-28
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with a light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
摘要翻译： 为了缩短开发和制造半导体集成电路器件的周期，在通过曝光处理将集成电路图案转印到晶片上时，使用光掩模PM 1，其部分地设置有遮光图案3 除了由金属形成的遮光图案之外还形成有抗蚀剂膜。
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公开(公告)号：US06936406B2
公开(公告)日：2005-08-30
申请号：US10364702
申请日：2003-02-12
申请人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Joji Okada , Toshihiko Tanaka , Kazutaka Mori , Ko Miyazaki
CPC分类号： G03F1/56 , G03F1/70 , G03F7/0035 , G03F7/70433 , G03F7/707 , H01L21/0274 , Y10S438/942 , Y10S438/945 , Y10S438/948 , Y10S438/95
摘要： In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
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公开(公告)号：US06846598B2
公开(公告)日：2005-01-25
申请号：US10686723
申请日：2003-10-17
申请人： Norio Hasegawa , Toshihiko Tanaka , Joji Okada , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Toshihiko Tanaka , Joji Okada , Kazutaka Mori , Ko Miyazaki
IPC分类号： G03F1/32 , G03F1/38 , G03F1/40 , G03F1/54 , G03F1/56 , G03F1/62 , G03F1/68 , G03F1/80 , G03F7/00 , H01L21/027 , G03F9/00
CPC分类号： G03F1/56 , G03F7/0035
摘要： In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.
摘要翻译： 为了缩短在掩模上改变或校正掩模图案所需的时间，除了形成的遮光图案之外，在构成光掩模的掩模基板上部分地设置由用于集成电路图案转印的抗蚀剂膜形成的遮光图案 的金属用于集成电路图案转移。
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公开(公告)号：US06656644B2
公开(公告)日：2003-12-02
申请号：US09881701
申请日：2001-06-18
申请人： Norio Hasegawa , Toshihiko Tanaka , Joji Okada , Kazutaka Mori , Ko Miyazaki
发明人： Norio Hasegawa , Toshihiko Tanaka , Joji Okada , Kazutaka Mori , Ko Miyazaki
IPC分类号： G03F900
CPC分类号： G03F1/56 , G03F7/0035
摘要： In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.
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公开(公告)号：US20070155052A1
公开(公告)日：2007-07-05
申请号：US11714837
申请日：2007-03-07
IPC分类号： H01L21/58
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
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8.发明授权Method of fabricating a semiconductor integrated circuit that includes patterning a semiconductor substrate with a first photomask that uses metal for blocking light and patterning the same substrate with a second photomask that uses organic resin for blocking light 有权一种半导体集成电路的制造方法，其包括使用第一光掩模图案化半导体衬底，所述第一光掩模使用金属来阻挡光，并且利用使用有机树脂阻挡光的第二光掩模对相同衬底进行图案化公开(公告)号：US07205222B2
公开(公告)日：2007-04-17
申请号：US11022758
申请日：2004-12-28
IPC分类号： H01L21/475
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
摘要翻译： 提高了半导体集成电路器件的生产率。 根据使用光掩模的次数，适当地使用具有由金属制成的不透明图案的光掩模和由抗蚀剂膜制成的不透明图案的光掩模，从而进行曝光处理。
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9.发明申请公开(公告)号：US20050112504A1
公开(公告)日：2005-05-26
申请号：US11022758
申请日：2004-12-28
IPC分类号： G03F1/54 , G03F1/56 , G03F7/20 , H01L21/768 , G03F7/00
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
摘要翻译： 提高了半导体集成电路器件的生产率。 根据使用光掩模的次数，适当地使用具有由金属制成的不透明图案的光掩模和由抗蚀剂膜制成的不透明图案的光掩模，从而进行曝光处理。
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10.发明授权Method of fabricating a semiconductor integrated circuit that includes patterning a semiconductor substrate with a first photomask that uses metal for blocking light and patterning the same substrate with a second photomask that uses organic resin for blocking light 有权一种半导体集成电路的制造方法，其包括使用第一光掩模图案化半导体衬底，所述第一光掩模使用金属来阻挡光，并且利用使用有机树脂阻挡光的第二光掩模对相同衬底进行图案化公开(公告)号：US07361530B2
公开(公告)日：2008-04-22
申请号：US11714837
申请日：2007-03-07
IPC分类号： H01L21/58
CPC分类号： G03F7/70425 , G03F1/00 , G03F1/56 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05572 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/15311 , Y10S438/944 , Y10S438/946 , H01L2924/00
摘要： Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.
摘要翻译： 提高了半导体集成电路器件的生产率。 根据使用光掩模的次数，适当地使用具有由金属制成的不透明图案的光掩模和由抗蚀剂膜制成的不透明图案的光掩模，从而进行曝光处理。
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