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公开(公告)号：US4393333A
公开(公告)日：1983-07-12
申请号：US215064
申请日：1980-12-10
摘要： A microwave plasma ion source according to the present invention is designed such that a microwave electric field and a magnetic field are applied to a discharge gas introduced into a discharge region, to form plasma, from which ions are extracted. The above magnetic field is formed by means of an electromagnet provided on the low-voltage side of ion extraction electrodes and a high-permeability member provided in that section which is on the side of a waveguide and which permits the microwaves to be propagated freely.
摘要翻译： 根据本发明的微波等离子体离子源被设计成使微波电场和磁场被施加到引入到放电区域的放电气体，形成从其中提取离子的等离子体。 上述磁场通过设置在离子提取电极的低压侧的电磁体和设置在该部分中的位于波导侧的高导磁性部件形成，并允许微波自由传播。
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公开(公告)号：US4409520A
公开(公告)日：1983-10-11
申请号：US247072
申请日：1981-03-24
IPC分类号： H01J23/36 , H01J27/02 , H01J27/16 , H01J27/18 , H01J37/08 , H01L21/265 , H01J7/46 , H01J19/80
摘要： A microwave discharge ion source according to this invention comprises a microwave generator, a discharge chamber having ridged electrodes, and a waveguide connecting the microwave generator with the discharge chamber. This waveguide consists of a waveguide having no ridged electrode, and a waveguide having ridged electrodes. Further, a vacuum-sealing dielectric plate is disposed at an intermediate position or an end part of the waveguide having no ridged electrode. A space in the waveguide as extends from the vacuum-sealing dielectric plate to the discharge chamber is filled with a dielectric.As a result, the design and fabrication of the vacuum-sealing dielectric plate are facilitated, and a microwave discharge ion source of high performance is provided.
摘要翻译： 根据本发明的微波放电离子源包括微波发生器，具有脊状电极的放电室和将微波发生器与放电室连接的波导。 该波导由不具有脊状电极的波导和具有脊状电极的波导构成。 此外，真空密封电介质板设置在没有脊状电极的波导的中间位置或端部。 从真空密封电介质板延伸到放电室的波导中的空间填充有电介质。 结果，促进了真空密封电介质板的设计和制造，并且提供了高性能的微波放电离子源。
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公开(公告)号：US4316090A
公开(公告)日：1982-02-16
申请号：US154824
申请日：1980-05-30
摘要： A microwave plasma ion source according to this invention is characterized by the construction of the extracting electrode in contact with the discharge chamber. The electrode is divided into a part substantially exposed to a plasma and a remaining part which is not exposed to the plasma. Moreover, both these parts are held in a state in which they are electrically connected with each other.As a result, very little P or As deposits on the surface of the electrode, and a stable high-current ion beam can be supplied over a long period of time.
摘要翻译： 根据本发明的微波等离子体离子源的特征在于与放电室接触的提取电极的结构。 电极被分成基本上暴露于等离子体的部分和不暴露于等离子体的剩余部分。 此外，这两个部件保持在彼此电连接的状态。 结果，可以在长时间内供给在电极表面上沉积很少的P或As和稳定的高电流离子束。
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公开(公告)号：US4058748A
公开(公告)日：1977-11-15
申请号：US686121
申请日：1976-05-13
CPC分类号： H01J27/18 , H01J49/105
摘要： An ion source for emitting an efficient radiation of ion beam having a rectangular cross section includes a set of parallel electrodes to which a microwave power is supplied to generate a microwave electric field in an electrode gap. A DC magnetic field is applied in a direction along the opposing surfaces of the electrodes to provide a microwave discharge in the electrode gap in cooperation with the microwave electric field crossing therewith. The electrode gap or discharge space has a rectangular cross section perpendicular to a direction along which ions produced by the microwave discharge are extracted as an ion beam with a side of the cross section corresponding to the distance between the electrodes being shorter than its side crossing therewith. This allows the efficient generation of the ion beam having the rectangular cross section through one or more extraction electrodes which include rectangular slits corresponding in pattern to the above-mentioned cross section.
摘要翻译： 用于发射具有矩形横截面的离子束的有效辐射的离子源包括一组平行电极，微波功率被供应到该电极以在电极间隙中产生微波电场。 沿着电极的相对表面的方向施加DC磁场，以与与其交叉的微波电场配合，在电极间隙中提供微波放电。 电极间隙或放电空间具有垂直于微波放电产生的离子的离子束垂直的方向截面，其横截面的一侧对应于电极之间的距离短于与其交叉的侧面 。 这允许通过一个或多个提取电极有效地产生具有矩形横截面的离子束，所述提取电极包括与上述横截面相对应的矩形狭缝。
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公开(公告)号：US4101411A
公开(公告)日：1978-07-18
申请号：US787878
申请日：1977-04-15
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238
摘要： In an apparatus wherein a microwave discharge is caused by introducing a discharge gas into a discharge area to which a microwave electric field is supplied by a microwave coupler and to which an external magnetic field is supplied by a magnetic field generator, whereby the surface of a substrate is etched by using ions in a generated plasma, a plasma etching apparatus is characterized by employing a round waveguide as the microwave coupler, the discharge area being formed within the round waveguide.
摘要翻译： 在微波放电是通过将放电气体引入到由微波耦合器供给微波电场的放电区域中并且由磁场发生器供应外部磁场的情况下引起的微波放电的装置，由此， 通过在产生的等离子体中使用离子蚀刻衬底，等离子体蚀刻装置的特征在于采用圆形波导作为微波耦合器，放电区域形成在圆形波导内。
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公开(公告)号：US4330384A
公开(公告)日：1982-05-18
申请号：US89093
申请日：1979-10-29
IPC分类号： H01L21/3065 , H01L21/3213 , C23F1/02 , H05H1/24
CPC分类号： H01L21/32135 , H01L21/3065 , H01L21/32137
摘要： Micro-wave plasma etching is carried out with a gas containing at least SF.sub.6 as an etching gas at a high etching rate of silicon, and a high selectivity, with an easy monitoring and a low temperature dependency.
摘要翻译： 微波等离子体蚀刻通过在硅的高蚀刻速率下以至少含有SF 6的气体作为蚀刻气体进行，并且具有高选择性，易于监测和低温度依赖性。
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公开(公告)号：US4430138A
公开(公告)日：1984-02-07
申请号：US138082
申请日：1980-04-07
IPC分类号： C23F4/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H05H1/30 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32192 , H05H1/30 , H01J2237/3343
摘要： In a microwave plasma etching apparatus wherein the surface of a sample is exposed to a plasma generated by microwave discharge, thereby to subject the sample surface to an etching processing; the sample is transported while revolving along a circular orbit in a plasma exposure region, and the section of the plasma exposure region is put into the shape of a fan whose pivot coincides with the central point of the circuit orbit, whereby the enhancement of the etching processing capability and the uniformity of the etching speed are achieved.
摘要翻译： 在微波等离子体蚀刻装置中，其中样品的表面暴露于通过微波放电产生的等离子体，从而使样品表面进行蚀刻处理; 样品在等离子体曝光区域中沿着圆形轨道旋转传送，并且等离子体暴露区域的部分被放置成其枢转与电路轨道的中心点重合的风扇的形状，由此增强蚀刻 实现了处理能力和蚀刻速度的均匀性。
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公开(公告)号：US4462863A
公开(公告)日：1984-07-31
申请号：US459240
申请日：1983-01-19
申请人： Shigeru Nishimatsu , Keizo Suzuki , Ken Ninomiya , Ichiro Kanomata , Sadayuki Okudaira , Hiroji Saida
发明人： Shigeru Nishimatsu , Keizo Suzuki , Ken Ninomiya , Ichiro Kanomata , Sadayuki Okudaira , Hiroji Saida
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/30604 , H01J37/32192 , H01J37/3266 , H01J2237/3343 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.
摘要翻译： 公开了一种微波等离子体蚀刻系统，其包括用于提供放电空间的真空室，并且设有用于引入含有含氟气体，氢气和氧气的放电气体的入口，用于在放电中形成磁场的磁场形成装置 用于在放电空间中形成微波电场的空间微波电场形成装置和用于保持在真空室中待处理的基板的基板保持装置。 在微波等离子体蚀刻中，含有氟的放电气体，具有或不具有氧气的氢提供几乎不受侧面蚀刻的优良蚀刻。
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公开(公告)号：US4298419A
公开(公告)日：1981-11-03
申请号：US163294
申请日：1980-06-26
IPC分类号： C23F4/00 , C03C15/00 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/02 , C03C25/06 , H01L21/306
CPC分类号： H01J37/32357 , C03C15/00
摘要： A dry etching apparatus using microwaves according to the present invention is equipped with means for impressing such an AC voltage upon a sample as has a frequency ranging from 100 KHx to 10 MHx. Consequently, the sample has its surface prevented from being charged up no matter which it might be made of an insulator or might have its surface covered with an insulator. As a result, the etching rate can be maintained at a high level even for such sample.
摘要翻译： 根据本发明的使用微波的干式蚀刻装置具有将样品上的这种交流电压施加到100KHx至10MHZ的频率的装置。 因此，无论是由绝缘体制成还是将其表面覆盖绝缘体，样品的表面都不会被充电。 结果，即使对于这样的样品，蚀刻速率也可以保持在高水平。
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