公开(公告)号：US20200152568A1

公开(公告)日：2020-05-14

申请号：US16615839

申请日：2018-05-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Dominik Scholz ,  Christian Leirer

IPC: H01L23/528 ,  H01L23/532

Abstract: A semiconductor component may have a semiconductor body and an electrically conductive carrier layer. The semiconductor body may include a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, situated opposite the first main face, wherein the first main face is formed by a surface of the first semiconductor layer and the second main face is formed by a surface of the second semiconductor layer. The semiconductor body may further include at least one side face connecting the first main face to the second main face. The electrically conductive carrier layer may regionally cover the second main face the carrier layer is structured in such a way that it has at least one contact-free depression. Furthermore, a method for producing such a semiconductor component is disclosed.

公开(公告)号：US20200091372A1

公开(公告)日：2020-03-19

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US20190384140A1

公开(公告)日：2019-12-19

申请号：US16488105

申请日：2018-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Schulten ,  Michael Schumann ,  Dominik Scholz

IPC: G03B15/05 ,  H04N5/235 ,  H04N5/225

Abstract: An assembly is disclosed. In an embodiment an assembly includes a light source configured to illuminate a field of view, a control circuit configured to operate the light source and a camera configured to record a scene in the field of view, wherein the light source comprises at least one semiconductor component having at least one semiconductor chip, wherein the semiconductor chip has an semiconductor layer sequence with an active region, wherein the semiconductor chip comprises the plurality of pixels, wherein the plurality of pixels are configured to generate radiation of the light source, wherein the control circuit has a memory configured to store operational data of the light source, wherein the control circuit is configured to operate the pixels on basis of the operational data, and wherein the arrangement is configured to perform an adaptation of at least a part of the operational data in the memory during operation of the arrangement.

公开(公告)号：US20180166499A1

公开(公告)日：2018-06-14

申请号：US15578239

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L27/15 ,  H01L33/38

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/382 ,  H01L33/62

Abstract: A display device having a plurality of pixels that can be operated separately from one another is disclosed. In an embodiment the display includes a semiconductor layer sequence and a first contact structure for contacting a first semiconductor layer and a second contact structure for contacting a second semiconductor layer, wherein the first contact structure has first contacts configured to be operated separately from one another, each first contact extending laterally and uninterrupted along the first semiconductor layer and each first contact delimits a pixel in a lateral manner with its contour, wherein the semiconductor layer sequence and the first contact structure have at least one recess laterally bordering a respective pixel, which recess extends through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure has second contacts extending through the at least one recess.

公开(公告)号：US11316068B2

公开(公告)日：2022-04-26

申请号：US16316973

申请日：2017-07-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer

IPC: H01L33/08 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.

公开(公告)号：US20200037407A1

公开(公告)日：2020-01-30

申请号：US16484232

申请日：2018-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Schulten ,  Michael Schumann ,  Dominik Scholz

IPC: H05B33/08

Abstract: A method of operating a lighting device with a light-emitting component, in which the light-emitting component includes a plurality of pixels configured to illuminate a plurality of zones in a field of view, the light-emitting component includes a processing device including characterization data of the light-emitting component, and the pixels of the light-emitting component are operated as a function of the characterization data, wherein to determine characterization data prior to intended operation of the lighting device an intensity and/or a color location of the emitted light of a pixel or of each pixel is measured as a function of an operating current.

公开(公告)号：US20200028045A1

公开(公告)日：2020-01-23

申请号：US16495219

申请日：2018-03-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Guido Weiss ,  Christoph Schwarzmaier ,  Dominik Scholz ,  Nicole Heitzer

IPC: H01L33/62 ,  H01L23/00 ,  H01L33/60 ,  C25D7/12

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer and applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer, wherein a ratio of the first metal to the second metal in the seed layer is between 95:5 to 99:1.

公开(公告)号：US10475955B2

公开(公告)日：2019-11-12

申请号：US15779251

申请日：2016-11-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sophia Huppmann ,  Simeon Katz ,  Marcus Zenger ,  Dominik Scholz

IPC: H01L21/30 ,  H01L21/46 ,  H01L23/552 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/62

Abstract: A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

公开(公告)号：US10453989B2

公开(公告)日：2019-10-22

申请号：US15552259

申请日：2016-02-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Alexander F. Pfeuffer ,  Dominik Scholz ,  Isabel Otto ,  Norwin Von Malm ,  Stefan Illek

IPC: H01L21/76 ,  H01L33/00 ,  H01L33/48 ,  H01L21/02

Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).

公开(公告)号：US10242974B2

公开(公告)日：2019-03-26

申请号：US15113749

申请日：2015-01-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Juergen Moosburger ,  Andreas Ploessl ,  Patrick Rode ,  Peter Nagel ,  Dominik Scholz

IPC: H01L33/00 ,  H01L31/12 ,  H01L29/267 ,  H01L27/15 ,  H01L25/16 ,  H01L33/48 ,  H01L25/00 ,  H01L31/0232 ,  H01L31/147 ,  H01L31/18 ,  H01L33/58

Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).