公开(公告)号：US20170005079A1

公开(公告)日：2017-01-05

申请号：US15113749

申请日：2015-01-21

申请人： OSRAM OPTO SEMICONDUCTORS GMBH

发明人： Lutz HOEPPEL ,  Juergen MOOSBURGER ,  Andreas PLOESSL ,  Patrick RODE ,  Peter NAGEL ,  Dominik SCHOLZ

IPC分类号： H01L25/16 ,  H01L33/58 ,  H01L31/147 ,  H01L31/0232 ,  H01L25/00 ,  H01L31/18

CPC分类号： H01L25/167 ,  H01L25/50 ,  H01L31/02327 ,  H01L31/147 ,  H01L31/18 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/96 ,  H01L2933/0033 ,  H01L2933/0091

摘要： A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

摘要翻译： 提供了一种用于制造多个光电子半导体部件（100）的方法，包括以下步骤：a）提供辅助载体（2）; b）提供多个半导体芯片（10），其中每个半导体芯片具有布置在载体主体的上侧（22）上的载体主体（12）和半导体本体（4） c）将多个半导体芯片附接在辅助载体上，其中半导体芯片在横向（L）上彼此间隔开，并且其中半导体主体面向辅助载体，如从载体主体所见; d）至少在相邻半导体芯片的半导体主体之间的区域中形成散射层（18）; e）形成复合包装（20）; f）拆下辅助载体（2）; 以及g）将所述复合封装单独地分离成多个光电子半导体部件（100）。

公开(公告)号：US20160300829A1

公开(公告)日：2016-10-13

申请号：US15038034

申请日：2014-11-07

申请人： OSRAM OPTO SEMICONDUCTORS GMBH

发明人： Christian LEIRER ,  Berthold HAHN ,  Karl ENGL ,  Johannes BAUR ,  Siegfried HERRMANN ,  Andreas PLOESSL ,  Simeon KATZ ,  Tobias MEYER ,  Lorenzo ZINI ,  Markus MAUTE

IPC分类号： H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/32

CPC分类号： H01L27/0248 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/15 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Described is an optoelectronic semiconductor chip (1) with a built-in bridging element (9, 9A) for overvoltage protection.

摘要翻译： 描述了具有用于过压保护的内置桥接元件（9,9A）的光电子半导体芯片（1）。

公开(公告)号：US20190013450A1

公开(公告)日：2019-01-10

申请号：US16030714

申请日：2018-07-09

申请人： OSRAM Opto Semiconductors GmbH

发明人： Andreas PLOESSL

IPC分类号： H01L33/62 ,  B23K35/02 ,  B23K35/368 ,  H01L33/00 ,  H01L33/36 ,  H01L23/00

摘要： The method for assembling a carrier comprises a step A), in which a plurality of pigments (100), each with an electronic component (1), is provided. Further, each pigment comprises a meltable solder material (2) directly adjoining a mounting side (10) of the component. At least 63% by volume of each pigment is formed by the solder material. The mounting side of each component has a higher wettability with the molten solder material than a top side (12) and a side surface (11) of the component. In a step B), a carrier (200) with pigment landing areas (201) is provided, the pigment landing areas having higher wettability with the molten solder material of the pigments than the regions laterally adjacent to the pigment landing areas and than the side surfaces and the top sides of the components. In a step C), the pigments are applied to the carrier. In a step D), the pigments are heated so that the solder material melts.

公开(公告)号：US20170365736A1

公开(公告)日：2017-12-21

申请号：US15532071

申请日：2015-11-30

申请人： OSRAM Opto Semiconductors GmbH

发明人： Bernd BARCHMANN ,  Fabian EIGENMANN ,  Andreas PLOESSL

IPC分类号： H01L33/00 ,  H01L21/683 ,  H01L21/78

CPC分类号： H01L33/0054 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/03 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L31/022441 ,  H01L33/0091 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/03002 ,  H01L2224/05669 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/83469 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2224/94 ,  H01L2924/15156 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/03

摘要： A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.