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1.发明申请公开(公告)号：US20180219127A1
公开(公告)日：2018-08-02
申请号：US15745940
申请日：2016-07-13
发明人： Lutz HOEPPEL , Attila MOLNAR
摘要： The invention relates, inter alia, to a method for producing a plurality of semiconductor chips, the method comprising the following steps: providing a substrate (1); applying a semiconductor layer sequence (2) to the substrate (1); generating a plurality of recesses (6) in the semiconductor layer sequence (2) on the side of the semiconductor layer sequence (2) that is facing away from the substrate (1); detaching the substrate (1) from the semiconductor layer sequence (2); thinning the semiconductor layer sequence (2) on the side that was facing the substrate (1) prior to detaching the substrate (1).
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公开(公告)号：US20210351323A1
公开(公告)日：2021-11-11
申请号：US17281988
申请日：2019-09-27
发明人： Lutz HOEPPEL
摘要： A component may have a semiconductor body, a first electrode, and a second electrode. The first electrode and the second electrode may be configured for electrically contacting a first semiconductor layer and a second semiconductor, respectively, and may have a first distribution track and a second distribution track for uniformly distributing current in the first semiconductor layer and the second semiconductor layer, respectively. The first distribution track and the second distribution track may be arranged regionally one above the other on the same side of the semiconductor body, overlap each other regionally in top view, and cover the semiconductor body only in certain places. Furthermore, the first distribution track may extend in places throughout the second semiconductor layer and the active zone to the first semiconductor layer. The active zone may be removed only in places in overlapping regions of the semiconductor body and the first distribution track.
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公开(公告)号：US20180301590A1
公开(公告)日：2018-10-18
申请号：US15524618
申请日：2015-11-03
发明人： Johannes BAUR , Lutz HOEPPEL
IPC分类号： H01L33/00 , H01L33/40 , H01L33/62 , H01L33/52 , H01L31/0232 , H01L31/02 , H01L31/0203 , H01L31/18
CPC分类号： H01L33/005 , H01L31/02005 , H01L31/0203 , H01L31/02327 , H01L31/18 , H01L33/0079 , H01L33/0095 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/52 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： Disclosed is an optoelectronic semiconductor chip (10) comprising: —a succession of semiconductor layers (1) that has a main plane of extension, an active layer (12) and a bottom surface (1c); —a substrate (41) that is arranged on the bottom surface (1c) of the succession of semiconductor layers (1) and has a base surface (41c) facing away from the bottom surface (1c); and —a succession of joining layers (3) which is arranged in at least some locations between the succession of semiconductor layers (1) and the substrate (41) in a vertical direction; wherein —the substrate (41) laterally protrudes from the succession of semiconductor layers (1) by a maximum of 10 μm.
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4.发明申请METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE 审中-公开用于生产光电半导体器件和光电半导体器件的方法公开(公告)号：US20170005079A1
公开(公告)日：2017-01-05
申请号：US15113749
申请日：2015-01-21
发明人： Lutz HOEPPEL , Juergen MOOSBURGER , Andreas PLOESSL , Patrick RODE , Peter NAGEL , Dominik SCHOLZ
IPC分类号： H01L25/16 , H01L33/58 , H01L31/147 , H01L31/0232 , H01L25/00 , H01L31/18
CPC分类号： H01L25/167 , H01L25/50 , H01L31/02327 , H01L31/147 , H01L31/18 , H01L33/486 , H01L33/58 , H01L2224/96 , H01L2933/0033 , H01L2933/0091
摘要： A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).
摘要翻译： 提供了一种用于制造多个光电子半导体部件（100）的方法，包括以下步骤：a）提供辅助载体（2）; b）提供多个半导体芯片（10），其中每个半导体芯片具有布置在载体主体的上侧（22）上的载体主体（12）和半导体本体（4） c）将多个半导体芯片附接在辅助载体上，其中半导体芯片在横向（L）上彼此间隔开，并且其中半导体主体面向辅助载体，如从载体主体所见; d）至少在相邻半导体芯片的半导体主体之间的区域中形成散射层（18）; e）形成复合包装（20）; f）拆下辅助载体（2）; 以及g）将所述复合封装单独地分离成多个光电子半导体部件（100）。
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公开(公告)号：US20180261730A1
公开(公告)日：2018-09-13
申请号：US15755527
申请日：2016-09-08
发明人： Lutz HOEPPEL , Matthias SABATHIL , Norwin VON MALM
CPC分类号： H01L33/486 , H01L33/44 , H01L33/52 , H01L33/56 , H01L33/62 , H01L2933/0033 , H01L2933/0066
摘要： A mount (10) and an optoelectronic component (100) with the mount (10) are provided, wherein the mount (10) comprises a moulding (5), at least one through-contact (41, 42) and a plurality of reinforcing fibres (52), wherein the moulding (5) is formed from an electrically insulating moulding material (53), the through-contact (41, 42) is formed from an electrically conductive material, and the reinforcing fibres (52) produce a mechanical connection between the moulding (5) and the through-contact (41, 42) by the reinforcing fibres (52) being arranged in certain regions of the moulding (5) and arranged in certain regions of the through-contact (41, 42). A method for producing a mount or a component with such a mount is also provided.
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6.发明申请公开(公告)号：US20180190711A1
公开(公告)日：2018-07-05
申请号：US15739102
申请日：2016-07-11
发明人： Korbinian PERZLMAIER , Lutz HOEPPEL
IPC分类号： H01L27/15 , H01L33/38 , H01L33/44 , H01L33/62 , H01L29/872
CPC分类号： H01L27/15 , H01L29/1604 , H01L29/247 , H01L29/872 , H01L33/20 , H01L33/30 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
摘要： The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). Furthermore, a first contact layer (5a) is provided which extends laterally along the first semiconductor layer (3a) and electrically contacts same. A third semiconductor layer (7) is applied onto a first contact layer (5a) face facing away from the semiconductor layer sequence (3). A recess (8) is formed which extends through the third semiconductor layer (7), the first contact layer (5a), and the first semiconductor layer (3a) into the second semiconductor layer (3b). A passivation layer (9) is applied onto a third semiconductor layer (7) face facing away from the the semiconductor layer sequence (3). At least one first (9a) and at least one second passage opening (9b, 9c) are formed in the passivation layer (9). A second contact layer (5b) is applied which electrically contacts the second semiconductor layer (3b) in the region of the at least one first passage opening (9a) and the third semiconductor layer (7) in the region of the at least one second passage opening (9b, 9c). The invention additionally relates to an optoelectronic semiconductor chip (1).
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公开(公告)号：US20180069147A1
公开(公告)日：2018-03-08
申请号：US15552259
申请日：2016-02-15
发明人： Lutz HOEPPEL , Alexander F. PFEUFFER , Dominik SCHOLZ , Isabel OTTO , Norwin VON MALM , Stefan ILLEK
CPC分类号： H01L33/0079 , H01L21/02 , H01L33/486 , H01L2221/67 , H01L2933/0033
摘要： Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).
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公开(公告)号：US20220149256A1
公开(公告)日：2022-05-12
申请号：US17440213
申请日：2020-03-16
发明人： Lutz HOEPPEL , Attila MOLNAR
摘要： An optoelectronic semiconductor device may include a carrier having a roughened first main surface and optoelectronic semiconductor chips arranged over the roughened first main surface. The combined surface area of the optoelectronic semiconductor chips is smaller than the surface area of the carrier, and a part of the roughened first main surface is arranged between adjacent optoelectronic semiconductor chips.
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9.发明申请METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR DEVICES AND OPTOELECTRONIC SEMICONDUCTOR DEVICE 有权用于生产光电半导体器件和光电半导体器件的方法公开(公告)号：US20160300825A1
公开(公告)日：2016-10-13
申请号：US15029241
申请日：2014-09-02
发明人： Lutz HOEPPEL
IPC分类号： H01L25/16 , H01L33/00 , H01L27/02 , H01L31/0304 , H01L31/18 , H01L31/02 , H01L33/32 , H01L33/62
CPC分类号： H01L25/167 , H01L27/0248 , H01L31/02002 , H01L31/02005 , H01L31/03044 , H01L31/1852 , H01L31/1876 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01L2933/0066
摘要： The invention relates to a method for producing a plurality of optoelectronic semiconductor components (1), comprising the following steps: a) providing a semiconductor layer sequence (2) having a plurality of semiconductor body regions (200); b) providing a plurality of carrier bodies (3), which each have a first contact structure (31) and a second contact structure (32); c) forming a composite (4) having the semiconductor layer sequence and the carrier bodies in such a way that adjacent carrier bodies are separated from one another by interspaces (35) and each semiconductor body area is electrically conductive connected to the first contact structure and the second contact structure of the associated carrier body; and d) separating the composite into the plurality of semiconductor components, wherein the semiconductor components each have a semiconductor body (20) and a carrier body. The invention further relates to an optoelectronic semiconductor component (1).
摘要翻译： 本发明涉及一种用于制造多个光电子半导体元件（1）的方法，包括以下步骤：a）提供具有多个半导体体区域（200）的半导体层序列（2）; b）提供多个载体主体（3），每个载体主体具有第一接触结构（31）和第二接触结构（32）; c）形成具有半导体层序列和载体的复合体（4），使得相邻载体彼此间隔（35）并且每个半导体主体区域与第一接触结构导电连接，并且 相关联的承载体的第二接触结构; 以及d）将所述复合材料分离成所述多个半导体部件，其中所述半导体部件各自具有半导体本体（20）和载体主体。 本发明还涉及光电子半导体部件（1）。
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