公开(公告)号：US20170005079A1

公开(公告)日：2017-01-05

申请号：US15113749

申请日：2015-01-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Lutz HOEPPEL ,  Juergen MOOSBURGER ,  Andreas PLOESSL ,  Patrick RODE ,  Peter NAGEL ,  Dominik SCHOLZ

IPC: H01L25/16 ,  H01L33/58 ,  H01L31/147 ,  H01L31/0232 ,  H01L25/00 ,  H01L31/18

CPC classification number: H01L25/167 ,  H01L25/50 ,  H01L31/02327 ,  H01L31/147 ,  H01L31/18 ,  H01L33/486 ,  H01L33/58 ,  H01L2224/96 ,  H01L2933/0033 ,  H01L2933/0091

Abstract: A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).

Abstract translation: 提供了一种用于制造多个光电子半导体部件（100）的方法，包括以下步骤：a）提供辅助载体（2）; b）提供多个半导体芯片（10），其中每个半导体芯片具有布置在载体主体的上侧（22）上的载体主体（12）和半导体本体（4） c）将多个半导体芯片附接在辅助载体上，其中半导体芯片在横向（L）上彼此间隔开，并且其中半导体主体面向辅助载体，如从载体主体所见; d）至少在相邻半导体芯片的半导体主体之间的区域中形成散射层（18）; e）形成复合包装（20）; f）拆下辅助载体（2）; 以及g）将所述复合封装单独地分离成多个光电子半导体部件（100）。

公开(公告)号：US20180069147A1

公开(公告)日：2018-03-08

申请号：US15552259

申请日：2016-02-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz HOEPPEL ,  Alexander F. PFEUFFER ,  Dominik SCHOLZ ,  Isabel OTTO ,  Norwin VON MALM ,  Stefan ILLEK

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/48

CPC classification number: H01L33/0079 ,  H01L21/02 ,  H01L33/486 ,  H01L2221/67 ,  H01L2933/0033

Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).

公开(公告)号：US20170358719A1

公开(公告)日：2017-12-14

申请号：US15533006

申请日：2015-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik SCHOLZ ,  Martin MANDL ,  Ion STOLL ,  Martin STRASSBURG ,  Barbara HUCKENBECK

IPC: H01L33/50 ,  H01L33/16 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/505 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  H01L33/508 ,  H01L2933/0041

Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

公开(公告)号：US20180294378A1

公开(公告)日：2018-10-11

申请号：US16006765

申请日：2018-06-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel OTTO ,  Alexander F. PFEUFFER ,  Dominik SCHOLZ

IPC: H01L33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L21/3065 ,  H01L33/00 ,  H01L31/12 ,  H01L21/28 ,  H01L21/461 ,  H01L21/3213 ,  H01L21/311 ,  H01L25/16

CPC classification number: H01L33/08 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L25/167 ,  H01L27/156 ,  H01L31/12 ,  H01L33/00 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having—a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c),—an active layer (23), and—a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein—the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that—the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and—the first contact layer (41) and the second contact layer (42) run parallel to each other.

公开(公告)号：US20170186911A1

公开(公告)日：2017-06-29

申请号：US15508899

申请日：2015-09-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel OTTO ,  Alexander F. PFEUFFER ,  Dominik SCHOLZ

IPC: H01L33/08 ,  H01L33/38

CPC classification number: H01L33/08 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461 ,  H01L25/167 ,  H01L27/156 ,  H01L31/12 ,  H01L33/00 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having —a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), —an active layer (23), and —a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein —the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that —the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and —the first contact layer (41) and the second contact layer (42) run parallel to each other.