公开(公告)号：US20210358792A1

公开(公告)日：2021-11-18

申请号：US17288430

申请日：2019-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ralph Wagner

IPC: H01L21/683 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  B32B43/00

Abstract: In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier.

公开(公告)号：US12112968B2

公开(公告)日：2024-10-08

申请号：US17288430

申请日：2019-10-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ralph Wagner

IPC: B32B43/00 ,  H01L21/683 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L21/6835 ,  B32B43/006 ,  H01L33/0093 ,  H01L33/22 ,  H01L33/32 ,  H01L2221/68354 ,  H01L2221/68368 ,  Y10T156/1158 ,  Y10T156/1917

Abstract: In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and electrically arranging the semiconductor bodies on at least one permanent carrier.

公开(公告)号：US20160163939A1

公开(公告)日：2016-06-09

申请号：US14906724

申请日：2014-07-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ralph Wagner ,  Thomas Veit ,  Björn Hoxhold ,  Philipp Schlosser

IPC: H01L33/62 ,  H01L31/02 ,  H01L31/0203 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L31/02005 ,  H01L31/0203 ,  H01L33/385 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip includes a carrier, a semiconductor body having an active region that generates and/or receives radiation, and an insulation layer wherein the semiconductor body is fastened on the carrier with a connecting layer; the carrier extends in a vertical direction between a first main surface facing toward the semiconductor body, and a second main surface facing away from the semiconductor body, and a lateral surface connects the first main surface and the second main surface to one another; a first region of the lateral surface of the carrier has an indentation; a second region of the lateral surface runs in the vertical direction between the indentation and the second main surface; the insulation layer at least partially covers each of the semiconductor body and the first region; and the second region is free of the insulation layer.

Abstract translation: 光电半导体芯片包括载体，具有产生和/或接收辐射的有源区的半导体本体，以及绝缘层，其中半导体主体用连接层紧固在载体上; 载体在面向半导体主体的第一主表面和背离半导体本体的第二主表面之间沿垂直方向延伸，并且侧表面将第一主表面和第二主表面彼此连接; 载体的侧表面的第一区域具有凹陷; 侧表面的第二区域在凹陷和第二主表面之间沿垂直方向延伸; 绝缘层至少部分地覆盖半导体本体和第一区域中的每一个; 并且第二区域没有绝缘层。