公开(公告)号：US20170271438A1

公开(公告)日：2017-09-21

申请号：US15614917

申请日：2017-06-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ewald Karl Michael Günther ,  Andreas Plössl ,  Heribert Zull ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck ,  Bernd Böhm ,  Korbinian Perzlmaier

IPC: H01L29/06 ,  H01L25/16 ,  H01L29/66 ,  H01L27/02 ,  H01L27/14 ,  H01L27/15 ,  H01L33/00 ,  H01L33/64 ,  H01L33/38 ,  H01L23/60

CPC classification number: H01L29/0607 ,  H01L23/60 ,  H01L25/167 ,  H01L27/0248 ,  H01L27/14 ,  H01L27/15 ,  H01L29/66128 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/641 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

公开(公告)号：US09972967B2

公开(公告)日：2018-05-15

申请号：US15509028

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Joachim Pfeiffer ,  Jens Mueller ,  Christoph Eichler ,  Thomas Veit ,  Thomas Adlhoch

IPC: H01S5/02 ,  H01S5/22

CPC classification number: H01S5/0202 ,  H01S5/0203 ,  H01S5/22 ,  H01S5/2201

Abstract: A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.

公开(公告)号：US09608401B2

公开(公告)日：2017-03-28

申请号：US14653698

申请日：2013-12-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Roland Enzmann ,  Markus Horn ,  Markus Graul ,  Thomas Veit ,  Juergen Dachs ,  Stefan Listl ,  Markus Arzberger

IPC: H01S5/02 ,  H01S5/323 ,  H01S5/022

CPC classification number: H01S5/0201 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/02236 ,  H01S5/0226 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/323 ,  H01S5/32333

Abstract: Method for producing semiconductor laser elements (1) comprises A) providing a carrier composite (20) having a plurality of carriers (2) for the semiconductor laser elements (1), B) providing a laser bar (30) having a plurality of semiconductor laser diodes (3) which comprise a common growth substrate (31) and a semiconductor layer sequence (32) grown thereon, C) generating predetermined breaking points (35) on a substrate underside (34) of the growth substrate (31), said substrate underside facing away from the semiconductor layer sequence (32), D) attaching the laser bar (30) to a carrier upper side (23) of the carrier composite (20), wherein the attachment is performed at an elevated temperature and is followed by cooling, and E) singulating into the semiconductor laser elements (1), wherein steps B) to E) are performed in the indicated sequence.

公开(公告)号：US10224393B2

公开(公告)日：2019-03-05

申请号：US15614917

申请日：2017-06-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ewald Karl Michael Günther ,  Andreas Plöβl ,  Heribert Zull ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck ,  Bernd Böhm ,  Korbinian Perzlmaier

IPC: H01L23/60 ,  H01L25/16 ,  H01L27/02 ,  H01L27/14 ,  H01L27/15 ,  H01L29/06 ,  H01L29/66 ,  H01L33/00 ,  H01L33/38 ,  H01L33/64

Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.

公开(公告)号：US20170264073A1

公开(公告)日：2017-09-14

申请号：US15509028

申请日：2015-08-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Joachim Pfeiffer ,  Jens Mueller ,  Christoph Eichler ,  Thomas Veit ,  Thomas Adlhoch

IPC: H01S5/02 ,  H01S5/22

CPC classification number: H01S5/0202 ,  H01S5/0203 ,  H01S5/22 ,  H01S5/2201

Abstract: A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.

公开(公告)号：US20160163939A1

公开(公告)日：2016-06-09

申请号：US14906724

申请日：2014-07-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ralph Wagner ,  Thomas Veit ,  Björn Hoxhold ,  Philipp Schlosser

IPC: H01L33/62 ,  H01L31/02 ,  H01L31/0203 ,  H01L33/52

CPC classification number: H01L33/62 ,  H01L31/02005 ,  H01L31/0203 ,  H01L33/385 ,  H01L33/44 ,  H01L33/52 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor chip includes a carrier, a semiconductor body having an active region that generates and/or receives radiation, and an insulation layer wherein the semiconductor body is fastened on the carrier with a connecting layer; the carrier extends in a vertical direction between a first main surface facing toward the semiconductor body, and a second main surface facing away from the semiconductor body, and a lateral surface connects the first main surface and the second main surface to one another; a first region of the lateral surface of the carrier has an indentation; a second region of the lateral surface runs in the vertical direction between the indentation and the second main surface; the insulation layer at least partially covers each of the semiconductor body and the first region; and the second region is free of the insulation layer.

Abstract translation: 光电半导体芯片包括载体，具有产生和/或接收辐射的有源区的半导体本体，以及绝缘层，其中半导体主体用连接层紧固在载体上; 载体在面向半导体主体的第一主表面和背离半导体本体的第二主表面之间沿垂直方向延伸，并且侧表面将第一主表面和第二主表面彼此连接; 载体的侧表面的第一区域具有凹陷; 侧表面的第二区域在凹陷和第二主表面之间沿垂直方向延伸; 绝缘层至少部分地覆盖半导体本体和第一区域中的每一个; 并且第二区域没有绝缘层。

公开(公告)号：US20170345966A1

公开(公告)日：2017-11-30

申请号：US15675991

申请日：2017-08-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Heribert Zull ,  Franz Eberhard ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck

IPC: H01L33/00 ,  H01L21/78 ,  H01S5/02

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01S5/0201 ,  H01L2924/00

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

公开(公告)号：US09768344B2

公开(公告)日：2017-09-19

申请号：US15091124

申请日：2016-04-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Heribert Zull ,  Franz Eberhard ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck

IPC: H01L51/40 ,  H01L33/00 ,  H01L21/78 ,  H01S5/02

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01S5/0201 ,  H01L2924/00

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

公开(公告)号：US20160218241A1

公开(公告)日：2016-07-28

申请号：US15091124

申请日：2016-04-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian Perzlmaier ,  Heribert Zull ,  Franz Eberhard ,  Thomas Veit ,  Mathias Kämpf ,  Jens Dennemarck

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L2924/0002 ,  H01S5/0201 ,  H01L2924/00

Abstract: A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

Abstract translation: 一种制造半导体本体的方法包括提供具有至少两个芯片区域和布置在芯片区域之间的至少一个分离区域的半导体晶片，其中半导体晶片包括层序列，其最外层具有至少在分离 区域是对电磁辐射透射的透射层，在激光的帮助下开始分离过程之前执行去除分离区域之间的透射层中的至少一个，在分离区域内施加吸收层，其中吸收层保留在 在随后的分离过程中借助于激光，并且增加透射层在分离区域内的吸收系数，随后通过激光沿着分离区域分离芯片区域。

公开(公告)号：US20140080287A1

公开(公告)日：2014-03-20

申请号：US14002754

申请日：2012-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Heribert Zull ,  Korbinian Perzlmaier ,  Andreas Ploessl ,  Thomas Veit ,  Mathias Kampf ,  Jens Dennemarck ,  Bernd Bohm

IPC: H01L21/683 ,  H01L21/78

CPC classification number: H01L21/6836 ,  H01L21/78 ,  H01L21/7806 ,  H01L21/782 ,  H01L21/784 ,  H01L31/18 ,  H01L33/0079 ,  H01L33/0095 ,  H01S5/0201

Abstract: A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Abstract translation: 一种方法涉及将组分复合材料分离成多个组分区域，其中所述组分复合材料具有包括用于产生或用于接收电磁辐射的区域的半导体层序列。 组件复合材料安装在刚性副载波上。 组分复合材料被分离成多个组分区域，其中从每个组分区域的半导体层序列产生一个半导体本体。 从子载波去除分量区域。