-
公开(公告)号：US09214600B2
公开(公告)日：2015-12-15
申请号：US14382286
申请日：2013-02-20
发明人： Martin Mandl , Martin Straβburg , Christopher Kölper , Alexander Pfeuffer , Patrick Rode , Johannes Ledig , Richard Neumann , Andreas Waag
CPC分类号： H01L33/08 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/385 , H01L33/42 , H01L33/50 , H01L33/62 , H01L2933/0016
摘要： An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.
摘要翻译： 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。
-
公开(公告)号：US09966503B2
公开(公告)日：2018-05-08
申请号：US15038562
申请日：2014-12-18
发明人： Martin Straβburg , Martin Mandl , Tilman Schimpke , Ion Stoll , Barbara Huckenbeck , Franz Zwaschka , Daniel Bichler
CPC分类号： H01L33/502 , H01L27/156 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/504 , H01L33/505 , H01L33/56 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
摘要： An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.
-
公开(公告)号：US09496462B2
公开(公告)日：2016-11-15
申请号：US14760177
申请日：2013-12-18
发明人： Britta Göötz , Wolfgang Mönch , Martin Straβburg
IPC分类号： H01L33/08 , H01L33/50 , H01L33/32 , H01L33/56 , H01L27/15 , C09K11/06 , H01L33/18 , C08G61/02
CPC分类号： H01L33/502 , C08G61/02 , C08G2261/3142 , C08G2261/3422 , C08G2261/5222 , C08G2261/95 , C09K11/06 , C09K2211/1416 , H01L27/15 , H01L33/08 , H01L33/18 , H01L33/32 , H01L33/505 , H01L33/507 , H01L33/56
摘要： An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.
摘要翻译： 光电半导体芯片包括彼此间隔一定距离排列的多个有源元件。 载体横向于有源元件布置。 有源元件各自具有垂直于载体延伸并且彼此平行取向的主轴。 转换器材料围绕圆周面上的有源元件。 转换器材料包括转化物质或转化物质和基质材料。 活性元件各自具有由至少两层包围的中心芯区域，使得活性层包围芯区域，并且覆盖层包围活性层。 芯区域形成有第一半导体材料。 有源层包括发光材料。 覆盖层由第二半导体材料形成，并且可以具有0.1nm和100n之间的层厚度。
-
公开(公告)号：US09257596B2
公开(公告)日：2016-02-09
申请号：US14371722
申请日：2013-01-15
发明人： Martin Straβburg , Enrique Calleja-Pardo , Steven Albert , Ana Maria Bengoechea Encabo , Miguel Angel Sanchez-Garcia , Martin Mandl , Christopher Kölper
CPC分类号： H01L33/0075 , H01L27/153 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/32
摘要： A light-emitting diode chip comprising:—a semiconductor body (1) having a plurality of active regions (2), wherein—at least one of the active regions (2) has at least two subregions (21 . . . 28),—the active region (2) has at least one barrier region (3) arranged between two adjacent subregions (21 . . . 28) of said at least two subregions (21 . . . 28),—the at least two subregions (21 . . . 28) emit light of mutually different colour during operation of the light-emitting diode chip,—in at least one of the subregions (21 . . . 28) the emission of light is generated electrically, and—the barrier region (3) is configured to hinder a thermally activated redistribution of charge carriers between the two adjacent subregions (21 . . . 28), is specified.
摘要翻译： 一种发光二极管芯片，包括：具有多个有源区域（2）的半导体本体（1），其中所述有源区域（2）中的至少一个具有至少两个子区域（21 ... 28） 有源区域（2）具有至少一个屏障区域（3），其布置在所述至少两个子区域（21 ... 28）的两个相邻子区域（21 ... 28）之间， - 至少两个子区域（21 ... 28）在发光二极管芯片的工作期间发射相互不同颜色的光，在至少一个子区域（21-28）中，电子发射光产生，并且屏障区域 3）被配置为阻止在两个相邻子区域（21 ... 28）之间的热激活重新分配电荷载流子。
-
公开(公告)号：US09843162B2
公开(公告)日：2017-12-12
申请号：US14895120
申请日：2014-06-03
发明人： Jelena Ristic , Martin Straβburg , Alfred Lell , Uwe Strauβ
IPC分类号： H01S5/00 , H01S5/34 , H01L33/24 , H01S5/022 , H01S5/343 , H01L33/00 , H01L33/16 , H01L33/40 , H01S5/02 , H01S5/10 , H01S5/183 , H01S5/40 , H01S5/42 , H01L27/15 , H01L33/10 , H01L33/46
CPC分类号： H01S5/3428 , H01L27/156 , H01L33/007 , H01L33/10 , H01L33/16 , H01L33/24 , H01L33/405 , H01L33/46 , H01S5/0207 , H01S5/0217 , H01S5/02236 , H01S5/1042 , H01S5/1835 , H01S5/18377 , H01S5/341 , H01S5/34333 , H01S5/4025 , H01S5/4087 , H01S5/423
摘要： An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.
-
6.发明授权Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure 有权发光组件，其具有在柱状结构上具有活性区的半导体层序列公开(公告)号：US09531161B2
公开(公告)日：2016-12-27
申请号：US14785090
申请日：2014-04-17
发明人： Jelena Ristic , Martin Straβburg , Martin Mandl , Alfred Lell
IPC分类号： H01S5/00 , H01S5/20 , H01S5/18 , H01S5/40 , H01S5/183 , H01S5/42 , H01L27/15 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/18 , H01L25/075 , H01L33/00 , H01L33/14
CPC分类号： H01S5/2077 , H01L25/0753 , H01L27/156 , H01L33/0075 , H01L33/06 , H01L33/14 , H01L33/18 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2933/0033 , H01S5/18 , H01S5/183 , H01S5/4025 , H01S5/405 , H01S5/42 , H01L2924/00
摘要： An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.
摘要翻译： 组件具有一个柱状结构，其一端设置在衬底上，其中该结构至少部分被半导体层结构覆盖，该半导体层结构具有产生电磁辐射的有源区，该活性区具有用于辐射复合的带隙， 带隙沿结构的纵向轴线在结构的自由端的方向上减小，使得电荷载体在结构的自由端的方向上的扩散以及电荷载体对在该结构的区域中的辐射复合 支持结构的自由端。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.013 秒)
