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    SEMICONDUCTOR INTERCONNECT STRUCTURES
    5.
    发明申请
    SEMICONDUCTOR INTERCONNECT STRUCTURES 有权

    公开(公告)号：US20140151893A1

    公开(公告)日：2014-06-05

    申请号：US13693598

    申请日：2012-12-04

    申请人： Boyan Boyanov ,  Kanwal Singh ,  James Clarke ,  Alan Myers

    发明人： Boyan Boyanov ,  Kanwal Singh ,  James Clarke ,  Alan Myers

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L23/5283 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Techniques are disclosed that enable improved shorting margin between unlanded conductive interconnect features and neighboring conductive features. In some embodiments, an etch may be applied to an insulator layer having one or more conductive features therein, such that the insulator layer is recessed below the top of the conductive features and the edges of the conductive features are rounded or otherwise softened. A conformal etch stop layer may then be deposited over the conductive features and the insulator material. A second insulator layer may be deposited above the conformal etch stop layer, and an interconnect feature may pass through the second insulator layer and the conformal etch stop layer to connect with the rounded portion of one of the conductive features. In some embodiments, the interconnect feature is an unlanded via and the unlanded portion of the via may or may not penetrate through the conformal barrier layer.

    摘要翻译： 公开了能够改善未上行的导电互连特征与相邻导电特征之间的短路裕度的技术。 在一些实施例中，可以将蚀刻施加到其中具有一个或多个导电特征的绝缘体层，使得绝缘体层凹入导电特征的顶部下方，并且导电特征的边缘被倒圆或以其它方式软化。 然后可以在导电特征和绝缘体材料上沉积保形蚀刻停止层。 可以在保形蚀刻停止层上方沉积第二绝缘体层，并且互连特征可以穿过第二绝缘体层和保形蚀刻停止层以与导电特征之一的圆形部分连接。 在一些实施例中，互连特征是未上通孔，并且通孔的未上覆部分可以穿透或不穿透保形阻挡层。

    Wafer inspection with a customized reflective optical channel component
    7.
    发明申请
    Wafer inspection with a customized reflective optical channel component 有权
    使用定制的反射光通道部件进行晶片检查

    公开(公告)号：US20060119841A1

    公开(公告)日：2006-06-08

    申请号：US11332195

    申请日：2006-01-12

    申请人： Winston Saunders ,  James Clarke

    发明人： Winston Saunders ,  James Clarke

    IPC分类号： G01N21/88

    CPC分类号： G01N21/9501 ,  G01N21/956

    摘要： A method is described that adjusts the position of a item and sets a tilt angle for each of a plurality of micro-mirrors of a digital micro-mirror device. The setting of the tilt angles is to establish a filter within the optical channel of an inspection tool that inspects the item. The filter is to reduce noise received at an optical detection device. The tilt angle settings are a function of the position. The method also includes comparing information from the optical detection device that describes an inspected region of the item's surface against an expected version of the information.

    摘要翻译： 描述了一种调节物品的位置并为数字微镜装置的多个微反射镜中的每一个设置倾斜角的方法。 倾斜角的设置是在检查项目的检查工具的光通道内建立一个过滤器。 该滤波器用于减少在光学检测装置处接收到的噪声。 倾斜角度设置是位置的函数。 该方法还包括将来自光学检测装置的信息与描述物品表面的被检查区域与信息的预期版本进行比较。

    Processing electronic devices using a combination of supercritical fluid and sonic energy
    8.
    发明申请
    Processing electronic devices using a combination of supercritical fluid and sonic energy 审中-公开
    使用超临界流体和声能的组合处理电子设备

    公开(公告)号：US20060065627A1

    公开(公告)日：2006-03-30

    申请号：US10954384

    申请日：2004-09-29

    申请人： James Clarke ,  Kenneth Cadien ,  Justin Brask

    发明人： James Clarke ,  Kenneth Cadien ,  Justin Brask

    IPC分类号： B44C1/22 ,  B08B6/00 ,  C23F1/00

    CPC分类号： H01L29/66545 ,  B08B3/12 ,  B08B7/0021 ,  C23F1/02 ,  C23F1/10 ,  C23F1/12 ,  H01L21/28079 ,  H01L21/32133 ,  H01L29/665

    摘要： A method of processing a substrate. The method comprises flowing a supercritical fluid and a co-solvent across a substrate placed in a pressure tight vessel and applying a sonic energy to a surface of the substrate. The sonic energy can be an ultrasonic energy or a megasonic energy. The use of supercritical fluid and sonic energy can be used to clean a substrate, condition a surface of a substrate, to etch a substrate, to etch metal, to deliver materials to trenches and cavaties, and to selectively remove a polysilicon layer.

    摘要翻译： 一种处理衬底的方法。 该方法包括使超临界流体和辅助溶剂流过放置在压力容器中的基底上并将声能施加到基底表面。 声能可以是超声能量或兆声波能量。 超临界流体和声能的使用可用于清洁基底，调节基底的表面，蚀刻基底，蚀刻金属，将材料输送到沟槽和气泡，以及选择性地去除多晶硅层。

    Basic supercritical solutions for quenching and developing photoresists
    9.
    发明申请
    Basic supercritical solutions for quenching and developing photoresists 审中-公开
    用于淬火和发展光刻胶的基本超临界解决方案

    公开(公告)号：US20060003271A1

    公开(公告)日：2006-01-05

    申请号：US10883457

    申请日：2004-06-30

    申请人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

    发明人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

    IPC分类号： G03F7/30

    CPC分类号： G03F7/327

    摘要： A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.

    摘要翻译： 配制成包含至少一种超临界流体和碱的基本超临界溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。 碱可以是基本超临界溶液中的超临界流体。 超临界流体是高于临界温度和压力（T T c C和C C）的物质状态。 配制成包含至少一种超临界流体的基本超临界溶液具有低粘度和表面张力，并且由于超临界流体的气体性质，能够穿透具有高纵横比的窄特征和光致抗蚀剂材料。

    Limited Spatial Digital Directory with Physical Navigation for Optimizing Smart Carts
    10.
    发明申请
    Limited Spatial Digital Directory with Physical Navigation for Optimizing Smart Carts 审中-公开

    公开(公告)号：US20180315011A1

    公开(公告)日：2018-11-01

    申请号：US15903042

    申请日：2018-02-23

    申请人： John Clarke ,  James Clarke ,  Paul Clarke

    发明人： John Clarke ,  James Clarke ,  Paul Clarke

    IPC分类号： G06Q10/08 ,  G06K7/14 ,  G06Q20/20

    摘要： The present disclosure relates to a program or system for navigating a store or handling and locating inventory within a store. This application has several embodiments including but not limited to those where the program operates on a computerized console directly docked on a store cart, a mobile device tethered to a store cart, or any combination of the two. Security features, charging features (using energy including but not limited synergistically charged batteries or solar panels) scanning features, geospatial features and other peripheral device enabled features are disclosed in the multiple embodiments of the disclosure. For use with a smart cart the invention disclosed herein can greatly enhance a shopping experience, allowing for efficient shopping, with features like phone charging, simplified item location and purchasing for shoppers and ease of inventory management, cart-maintenance, and security for shop keepers.