摘要:
A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.
摘要:
A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.
摘要:
A cleaning processing part including an edge cleaning processing unit for cleaning an edge of a substrate is provided in an indexer block. An indexer robot provided in the indexer block transports an unprocessed substrate taken out of a cassette to the cleaning processing part before transporting the unprocessed substrate to an anti-reflection film processing block serving as a processor. The cleaning processing part cleans an edge and a back surface of a substrate.
摘要:
After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.
摘要:
After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.
摘要:
After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.
摘要:
After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.
摘要:
After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.
摘要:
After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.
摘要:
The transporting process from cleaning and drying processing of a substrate in a cleaning/drying processing unit in a cleaning/drying processing group to post-exposure bake (PEB) of the substrate in a thermal processing group for post-exposure bake in a cleaning/drying processing block is described below. First, after the substrate after exposure processing is subjected to the cleaning and drying processing in the cleaning/drying processing group, a sixth central robot takes out the substrate from the cleaning/drying processing group and carries that substrate into the thermal processing group for post-exposure bake in the cleaning/drying processing block.