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    Forming method for variable-resistance nonvolatile memory element
    2.
    发明授权
    Forming method for variable-resistance nonvolatile memory element 有权
    可变电阻非易失性存储元件的形成方法

    公开(公告)号：US09524776B2

    公开(公告)日：2016-12-20

    申请号：US15130939

    申请日：2016-04-16

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Ken Kawai ,  Koji Katayama

    IPC: G11C11/00 ,  G11C13/00

    CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/56

    Abstract: A forming method includes: applying a first pulse voltage to a second electrode to a variable-resistance nonvolatile memory element in first state; and executing at least once a sequence that includes determining whether the variable-resistance nonvolatile memory element is in a second state, and continuously applying a second pulse voltage followed by a third pulse voltage to the variable-resistance nonvolatile memory element when the variable-resistance nonvolatile memory element is determined not to be in the second state.

    Abstract translation: 一种形成方法包括：在第一状态下，向第二电极施加第一脉冲电压到可变电阻非易失性存储元件; 以及执行至少一次包括确定所述可变电阻非易失性存储元件是否处于第二状态的序列，并且当所述可变电阻器的可变电阻值为可变电阻时，向所述可变电阻非易失性存储器元件连续施加第二脉冲电压和第三脉冲电压 非易失性存储元件被确定为不处于第二状态。

    Gas detection device, gas detection system, fuel cell vehicle, and gas detection method
    3.
    发明授权
    Gas detection device, gas detection system, fuel cell vehicle, and gas detection method 有权

    公开(公告)号：US11541737B2

    公开(公告)日：2023-01-03

    申请号：US16471913

    申请日：2017-12-18

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Shunsaku Muraoka ,  Kazunari Homma ,  Koji Katayama ,  Zhiqiang Wei

    IPC: G01M3/16 ,  G01N27/04 ,  G01R27/22 ,  H01M8/1246 ,  B60K1/04

    Abstract: Provided is a gas detection device that includes a gas sensor, a power supply circuit that applies voltage to the gas sensor, and a control circuit that determines whether a leak of gas is present. The power supply circuit includes a reset power source that generates a first voltage, and a detection power source that generates a detection voltage for measuring resistance of a metal-oxide layer of the gas sensor. When a value of a current flowing through the metal-oxide layer is a predetermined value ITH or greater, the reset power source applies the first voltage to the gas sensor to perform a reset of resetting the metal-oxide layer of the gas sensor to a high-resistance state, and the control circuit determines that a leak of gas is present, depending on a state in which the reset is performed after the reset is performed for the first time.

    Nonvolatile memory element and nonvolatile memory device
    5.
    发明授权
    Nonvolatile memory element and nonvolatile memory device 有权
    非易失性存储器元件和非易失性存储器件

    公开(公告)号：US09082479B2

    公开(公告)日：2015-07-14

    申请号：US13991787

    申请日：2012-10-03

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Zhiqiang Wei ,  Takeshi Takagi ,  Satoru Mitani ,  Shunsaku Muraoka ,  Koji Katayama

    IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00 ,  H01L27/24

    CPC classification number: G11C13/004 ,  G11C13/0007 ,  G11C13/0061 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2213/55 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

    Abstract: A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer.

    Abstract translation: 非易失性存储器件包括：第一电极; 第二电极; 和可变电阻层，其包括：包含第一金属氧化物的第一氧化物层; 位于第一氧化物层之间并与第一氧化物层接触的第二氧化物层和包含第二金属氧化物并且具有低于第一氧化物层的缺氧程度的氧缺乏程度的第二电极; 以及位于所述第一氧化物层和所述第二氧化物层中的局部区域，其与所述第二电极接触并且不与所述第一电极接触，并且具有高于所述第二氧化物层的氧缺乏程度的缺氧程度，以及 与第一氧化物层的氧缺乏程度不同。

    Gas-detecting apparatus including gas sensor and method of detecting hydrogen using gas sensor
    7.
    发明授权
    Gas-detecting apparatus including gas sensor and method of detecting hydrogen using gas sensor 有权

    公开(公告)号：US10281420B2

    公开(公告)日：2019-05-07

    申请号：US15472979

    申请日：2017-03-29

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Shunsaku Muraoka ,  Kazunari Homma ,  Zhiqiang Wei ,  Koji Katayama

    IPC: G01N27/12 ,  G01N33/00

    Abstract: A gas-detecting apparatus includes a gas sensor and a power supply circuit. The gas sensor includes: a first electrode; a second electrode; a metal oxide layer disposed between the first electrode and the second electrode; and an insulation film covering the first electrode, the second electrode, and the metal oxide layer. The insulation file having an opening from which a surface of the second electrode is exposed. The resistance value of the metal oxide layer decreases when gas containing hydrogen atoms comes into contact with the second electrode. The power supply circuit applies a predetermined voltage between the first electrode and the second electrode to increase the resistance value of the metal oxide layer before and/or after the decrease in the resistance value of the metal oxide layer.

    Nonvolatile memory element and nonvolatile memory device
    8.
    发明授权
    Nonvolatile memory element and nonvolatile memory device 有权
    非易失性存储器元件和非易失性存储器件

    公开(公告)号：US08957399B2

    公开(公告)日：2015-02-17

    申请号：US13995383

    申请日：2012-10-22

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

    IPC: H01L45/00 ,  G11C13/00 ,  G11C11/56 ,  H01L27/10 ,  H01L27/24

    CPC classification number: H01L45/145 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0083 ,  G11C2213/15 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1625

    Abstract: A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.

    Abstract translation: 可变电阻非易失性存储元件包括第一电极，第二电极和可变电阻层，包括：包含具有非化学计量组成的金属氧化物并包括p型载流子的第一氧化物层; 位于第一氧化物层之间并与第一氧化物层接触的第二氧化物层和第二电极，并且包括具有非化学计量组成并包括n型载体的金属氧化物; 位于所述第一氧化物层中的与第一电极没有接触并且氧含量原子百分比高于第一氧化物层的氧储存区; 以及位于所述第二氧化物层中的与氧储存区接触并且氧含量原子百分比低于第二氧化物层的原子百分比的局部区域。

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