公开(公告)号：US10680414B2

公开(公告)日：2020-06-09

申请号：US16181993

申请日：2018-11-06

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Toru Takayama ,  Tougo Nakatani ,  Takashi Kano ,  Katsuya Samonji

IPC分类号： H01S5/20 ,  H01S5/343 ,  H01S5/30 ,  H01L33/14 ,  H01L33/32 ,  H01S5/22 ,  F21Y115/30 ,  F21S41/176 ,  F21S41/16

摘要： A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.

公开(公告)号：US10985533B2

公开(公告)日：2021-04-20

申请号：US16228683

申请日：2018-12-20

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Tougo Nakatani ,  Takahiro Okaguchi ,  Norio Ikedo ,  Takeshi Yokoyama ,  Tomohito Yabushita ,  Toru Takayama ,  Shoichi Takasuka

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S5/223 ,  H01S5/20 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40 ,  H01S5/32

摘要： A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2 N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.

公开(公告)号：US10971897B2

公开(公告)日：2021-04-06

申请号：US16234344

申请日：2018-12-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Norio Ikedo ,  Tougo Nakatani ,  Takahiro Okaguchi ,  Takeshi Yokoyama ,  Tomohito Yabushita ,  Toru Takayama

IPC分类号： H01S5/16 ,  B23K26/21 ,  B23K26/06 ,  B23K37/00 ,  H01S5/10 ,  B23K26/70 ,  H01S5/042 ,  H01S5/343 ,  H01S5/20

摘要： A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

公开(公告)号：US11322908B2

公开(公告)日：2022-05-03

申请号：US16670833

申请日：2019-10-31

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Toru Takayama ,  Tohru Nishikawa ,  Tougo Nakatani ,  Katsuya Samonji ,  Takashi Kano ,  Shinji Ueda

IPC分类号： H01S5/34 ,  H01S5/024 ,  H01S5/026 ,  H01S5/22 ,  H01S5/343 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/16 ,  H01S5/02 ,  H01S5/0234 ,  F21Y115/30 ,  F21S41/176 ,  F21S41/16 ,  H01S5/20 ,  H01S5/10 ,  H01S5/0237

摘要： A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.

公开(公告)号：US11437780B2

公开(公告)日：2022-09-06

申请号：US16567336

申请日：2019-09-11

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Norio Ikedo ,  Tougo Nakatani ,  Takahiro Okaguchi ,  Takeshi Yokoyama ,  Tomohito Yabushita ,  Toru Takayama

IPC分类号： H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/40 ,  B23K26/21 ,  H01S5/343 ,  H01S5/0234 ,  H01S5/16 ,  H01S5/024 ,  B23K26/06 ,  H01S5/02 ,  B23K26/064

摘要： A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.