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1.发明授权公开(公告)号：US10985533B2
公开(公告)日：2021-04-20
申请号：US16228683
申请日：2018-12-20
发明人： Tougo Nakatani , Takahiro Okaguchi , Norio Ikedo , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama , Shoichi Takasuka
摘要： A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2 N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.
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2.发明授权公开(公告)号：US10971897B2
公开(公告)日：2021-04-06
申请号：US16234344
申请日：2018-12-27
发明人： Norio Ikedo , Tougo Nakatani , Takahiro Okaguchi , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama
IPC分类号： H01S5/16 , B23K26/21 , B23K26/06 , B23K37/00 , H01S5/10 , B23K26/70 , H01S5/042 , H01S5/343 , H01S5/20
摘要： A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.
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3.发明授权公开(公告)号：US11437780B2
公开(公告)日：2022-09-06
申请号：US16567336
申请日：2019-09-11
发明人： Norio Ikedo , Tougo Nakatani , Takahiro Okaguchi , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama
IPC分类号： H01S5/10 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/40 , B23K26/21 , H01S5/343 , H01S5/0234 , H01S5/16 , H01S5/024 , B23K26/06 , H01S5/02 , B23K26/064
摘要： A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.
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公开(公告)号：US09312659B2
公开(公告)日：2016-04-12
申请号：US14556195
申请日：2014-11-30
CPC分类号： H01S5/0282 , B82Y20/00 , H01S5/028 , H01S5/0281 , H01S5/06825 , H01S5/3013 , H01S5/323 , H01S5/343 , H01S5/34333
摘要： Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.
摘要翻译： 提供了一种高可靠性的氮化物半导体激光元件，其具有即使在激光操作中也不会剥离的坚固的端面保护膜。 氮化物半导体激光元件包括：包含III族氮化物半导体并具有发光端面的半导体多层结构; 以及包含电介质多层膜并覆盖半导体多层结构的发光端面的保护膜。 保护膜包括从发光端面按顺序依次布置的端面保护层和氧扩散抑制层。 端面保护层包括包含铝的氮化物的结晶膜。 氧扩散抑制层具有金属氧化物膜在氧化硅膜之间的结构。 金属氧化物膜通过激光结晶。
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