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公开(公告)号：US11322908B2
公开(公告)日：2022-05-03
申请号：US16670833
申请日：2019-10-31
发明人： Toru Takayama , Tohru Nishikawa , Tougo Nakatani , Katsuya Samonji , Takashi Kano , Shinji Ueda
IPC分类号： H01S5/34 , H01S5/024 , H01S5/026 , H01S5/22 , H01S5/343 , H01S5/023 , H01S5/0233 , H01S5/0235 , H01S5/16 , H01S5/02 , H01S5/0234 , F21Y115/30 , F21S41/176 , F21S41/16 , H01S5/20 , H01S5/10 , H01S5/0237
摘要： A nitride light emitter includes: a nitride semiconductor light-emitting element including an AlxGa1-xN substrate (0≤x≤1) and a multilayer structure above the AlxGa1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the AlxGa1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the AlxGa1-xN substrate.
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公开(公告)号：US09214789B2
公开(公告)日：2015-12-15
申请号：US14688746
申请日：2015-04-16
发明人： Toru Takayama
IPC分类号： H01S5/00 , H01S5/343 , H01S5/323 , H01S5/02 , H01S5/22 , H01S5/30 , H01S5/34 , H01S5/223 , H01S5/32
CPC分类号： H01S5/34333 , H01S5/0206 , H01S5/22 , H01S5/2231 , H01S5/3013 , H01S5/3201 , H01S5/3213 , H01S5/32341 , H01S5/3407 , H01S2301/173
摘要： A semiconductor light emitting element includes a substrate including GaN, a first cladding layer provided over the substrate, a quantum well active layer provided over the first cladding layer, a second cladding layer provided over the quantum well active layer, and a first refractive index correction layer provided between the substrate and the first cladding layer. The first refractive index correction layer includes a layer of In1-x-yAlyGaxN (where x+y 1, x/1.13+y/0.49>1, or x/1.54+y/0.24>1, and the relations x/0.91+y/0.75≧1 and x/1.08+y/0.91≦1.
摘要翻译： 半导体发光元件包括：包括GaN的衬底;设置在衬底上的第一覆盖层，设置在第一覆盖层上的量子阱有源层;设置在量子阱有源层上的第二覆层;以及第一折射率校正 层，设置在基板和第一包层之间。 第一折射率校正层包括In1-x-yAlyGaxN（其中x + y <1），x和y满足关系x / 1.05 + y / 0.69> 1，x / 1.13 + y / 0.49> 1 ，或x / 1.54 + y / 0.24> 1，关系x / 0.91 + y /0.75≥1和x / 1.08 + y / 0.91＆nlE; 1。
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公开(公告)号：US10680414B2
公开(公告)日：2020-06-09
申请号：US16181993
申请日：2018-11-06
发明人： Toru Takayama , Tougo Nakatani , Takashi Kano , Katsuya Samonji
IPC分类号： H01S5/20 , H01S5/343 , H01S5/30 , H01L33/14 , H01L33/32 , H01S5/22 , F21Y115/30 , F21S41/176 , F21S41/16
摘要： A nitride-based light-emitting device includes, on a GaN substrate: a first-conductivity-side first semiconductor layer; an active layer; and a second-conductivity-side first semiconductor layer, in the stated order, and further includes an electron barrier layer of a second conductivity type between the active layer and the second-conductivity-side first semiconductor layer, the electron barrier layer including a nitride-based semiconductor containing at least Al. The electron barrier layer has a first region in which an Al composition changes. The Al composition in the first region monotonically increases in a direction from the active layer to the second-conductivity-side first semiconductor layer. An impurity concentration in the second-conductivity-side first semiconductor layer is lower in a region nearer the electron barrier layer than in a region farther from the electron barrier layer.
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公开(公告)号：US10164408B2
公开(公告)日：2018-12-25
申请号：US15832248
申请日：2017-12-05
发明人： Toru Takayama
摘要： A light emitting element according to the present disclosure includes: a GaN substrate; a first strain correction layer disposed above the GaN substrate and including InxGa1-xN of a first conductivity type where x is greater than 0 and less than or equal to 1; a first low refractive index layer disposed above the first strain correction layer, including In1-a-bGaaAlbN of the first conductivity type, and having relationships of (a/0.98)+(b/0.8)≥1, (a/1.02)+(b/0.85)≤1, and (a/1.03)+(b/0.68)≥1; a first clad layer disposed above the first low refractive index layer, including AlzGa1-zN of the first conductivity type where z is greater than or equal to 0.03 and less than or equal to 0.06, and having a refractive index higher than a refractive index of the first low refractive index layer; and an active layer disposed above the first clad layer.
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5.发明授权公开(公告)号：US10985533B2
公开(公告)日：2021-04-20
申请号：US16228683
申请日：2018-12-20
发明人： Tougo Nakatani , Takahiro Okaguchi , Norio Ikedo , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama , Shoichi Takasuka
摘要： A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2 N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.
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6.发明授权公开(公告)号：US10971897B2
公开(公告)日：2021-04-06
申请号：US16234344
申请日：2018-12-27
发明人： Norio Ikedo , Tougo Nakatani , Takahiro Okaguchi , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama
IPC分类号： H01S5/16 , B23K26/21 , B23K26/06 , B23K37/00 , H01S5/10 , B23K26/70 , H01S5/042 , H01S5/343 , H01S5/20
摘要： A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.
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公开(公告)号：US09184565B2
公开(公告)日：2015-11-10
申请号：US14535057
申请日：2014-11-06
发明人： Toru Takayama
CPC分类号： H01S5/2205 , B82Y20/00 , H01S5/0014 , H01S5/0287 , H01S5/1014 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/3211 , H01S5/34333 , H01S2301/16
摘要： In a semiconductor light-emitting element, a first cladding layer in a first conductive type, a quantum well active layer, and a second cladding layer in a second conductive type are stacked on a semiconductor substrate in this order. A ridge-shaped stripe formed at the second cladding layer forms a waveguide. Rf Wr are satisfied, where the width of the ridge-shaped stripe at a front end face from which laser light is output is represented by Wf, the width of the ridge-shaped stripe at a rear end face is represented by Wr, the reflectance of the front end face is represented by Rf, and the reflectance of the rear end face is represented by Rr. Light in a fundamental transverse mode, a first high-order transverse mode, a second high-order transverse mode, and a third high-order transverse mode is guided in the waveguide.
摘要翻译： 在半导体发光元件中，第一导电类型的第一包层，量子阱有源层和第二导电类型的第二包层依次堆叠在半导体衬底上。 形成在第二包层处的脊状条形成波导。 满足Rf
Wr，其中输出激光的前端面处的脊状条的宽度由Wf表示，后端面处的脊状条的宽度被表示 通过Wr，前端面的反射率由Rf表示，后端面的反射率由Rr表示。 在波导中引导基本横向模式的光，第一高阶横模，第二高阶横模和第三高阶横模。 -
8.发明授权公开(公告)号：US11437780B2
公开(公告)日：2022-09-06
申请号：US16567336
申请日：2019-09-11
发明人： Norio Ikedo , Tougo Nakatani , Takahiro Okaguchi , Takeshi Yokoyama , Tomohito Yabushita , Toru Takayama
IPC分类号： H01S5/10 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/40 , B23K26/21 , H01S5/343 , H01S5/0234 , H01S5/16 , H01S5/024 , B23K26/06 , H01S5/02 , B23K26/064
摘要： A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.
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公开(公告)号：US11309688B2
公开(公告)日：2022-04-19
申请号：US16584173
申请日：2019-09-26
发明人： Daisuke Ikeda , Gen Shimizu , Hideo Kitagawa , Toru Takayama , Masayuki Ono , Katsuya Samonji , Osamu Tomita , Satoko Kawasaki
IPC分类号： H01S5/343 , H01S5/026 , H01S5/02 , H01S5/22 , H01L21/20 , H01L21/3065 , B28D5/00 , H01L33/00 , H01L21/285
摘要： In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.
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