公开(公告)号：US20170162490A1

公开(公告)日：2017-06-08

申请号：US15426142

申请日：2017-02-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIDENORI KATSUMURA ,  SHINYA TOKUNAGA ,  MASAYA SUMITA ,  HIROYOSHI YOSHIDA ,  YASUHIRO SUGAYA ,  KAZUHIDE URIU ,  OSAMU SHIBATA

IPC: H01L23/495 ,  H01L23/00 ,  B60R11/04 ,  H01L23/64 ,  H01L23/31 ,  H04N5/225 ,  H01L49/02 ,  H01L23/498

CPC classification number: H01L23/49589 ,  B60R11/04 ,  B60R2300/105 ,  B60R2300/301 ,  H01L23/3114 ,  H01L23/367 ,  H01L23/481 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49568 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49861 ,  H01L23/642 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L25/00 ,  H01L28/65 ,  H01L2224/16265 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48265 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/1205 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H04N5/2252 ,  H04N5/2257 ,  H04N5/2258 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A semiconductor device includes a metal plate capacitor that includes a heat-resistant metal plate and a capacitor unit including a sintered dielectric formed on at least one surface of the heat-resistant metal plate, a semiconductor chip disposed on the metal plate capacitor, a connector configured to electrically connect the semiconductor chip and the metal plate capacitor, and a protector configured to protect the semiconductor chip, the metal plate capacitor, and the connector.

公开(公告)号：US20170077019A1

公开(公告)日：2017-03-16

申请号：US15358257

申请日：2016-11-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YASUHIRO SUGAYA ,  HIDENORI KATSUMURA ,  SHINYA TOKUNAGA

IPC: H01L23/495

CPC classification number: H01L23/49589 ,  H01G4/224 ,  H01G4/228 ,  H01G4/33 ,  H01G4/40 ,  H01L23/4952 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49568 ,  H01L24/97 ,  H01L25/00 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried. The semiconductor chip, the electrode, the metal plate, and the like are electrically connected with each other via first, second, and third wires.

Abstract translation: 降低了在执行高速信号处理的半导体部件中成为问题的抖动。 半导体器件包括形成在耐热金属板的一个或多个表面上的耐热金属板，具有下电极的电容器部分，烧结电介质部分和上电极，固定在该耐热金属板上的半导体芯片 电容器部分，用于将引线框架电连接到半导体芯片和上部电极的导线，以及至少埋入电容器部分和半导体芯片的模具部件。 半导体芯片，电极，金属板等通过第一，第二和第三布线彼此电连接。