Photosensitive silicon chip having a ridge near an end photosite
    1.
    发明授权
    Photosensitive silicon chip having a ridge near an end photosite 失效
    感光硅芯片具有靠近端部光泽的脊

    公开(公告)号:US5696626A

    公开(公告)日:1997-12-09

    申请号:US542247

    申请日:1995-10-12

    IPC分类号: H01L31/0216 H04N1/04

    CPC分类号: H01L31/02162

    摘要: A photosensitive chip, such as used in a scanner or facsimile, defines a linear array of photosites, each photosite being covered with a filter formed from a cured translucent liquid. At the critical ends of the chip, between the end photosite in the array and the edge of the chip, there is provided a ridge which protrudes over the thickness of the filter. This ridge maintains the physical integrity of the filter.

    摘要翻译: 诸如用于扫描仪或传真机中的感光芯片限定了一种线性阵列的光斑,每个光斑都被由固化的半透明液体形成的过滤器覆盖。 在芯片的临界端,在阵列中的端部闪光和芯片的边缘之间,设置有突出于过滤器厚度的脊。 该脊保持过滤器的物理完整性。

    Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same
    2.
    发明授权
    Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same 有权
    具有减少滤光器薄膜边缘像素光电子的光学器件及其制造方法

    公开(公告)号:US06255133B1

    公开(公告)日:2001-07-03

    申请号:US09641292

    申请日:2000-08-18

    IPC分类号: H01L21302

    摘要: The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.

    摘要翻译: 本发明涉及在边缘像素上具有减小的滤光器薄化的电光装置,以及用于减少最接近诸如感光芯片的光电装置的边缘的像素上的滤光层的薄化的方法, 例如,在全色数字复印机或扫描仪中。 半导体晶片包括限定由凹槽分开的多个芯片区域和突片区域的主表面,其中所述芯片区域包括内部光斑,外部光电子​​和键合焊盘。 在突片区域的主表面上沉积多个堤坝,并且在主表面之外沉积清晰层,而不包括粘合垫。 或者,在除了接合焊盘之外的主表面上沉积透明层,然后将多个突片沉积在主表面上的突片区域中。 第一原色滤色器层沉积在至少第一内部光泽和第一外部光泽上,并且第一原色滤色器层透过原色。

    Process for separating image sensor dies and the like from a wafer that
minimizes silicon waste
    3.
    发明授权
    Process for separating image sensor dies and the like from a wafer that minimizes silicon waste 失效
    用于从使硅废料最小化的晶片分离图像传感器管芯等的工艺

    公开(公告)号:US5128282A

    公开(公告)日:1992-07-07

    申请号:US787445

    申请日:1991-11-04

    IPC分类号: H01L21/304 H01L31/18

    摘要: A process for separating image sensor dies and the like from a wafer in which pairs of separation grooves separating each row of dies are formed in the active side of the wafer, with the tab between each groove pair being substantially equal to the width of the dicing blade, cutting a single bottom groove in the inactive side of the wafer opposite to and spanning each pair of separation grooves, and aligning the dicing blade with the midpoint of the wall of one groove in each pair of grooves so as to cut between the rows of dies. In a second embodiment, a two-pass separation process is enabled in which the tab between separation grooves is slightly larger than the width of the dicing blade, with the dicing blade first aligned with the midpoint of one separation groove to cut one row of dies from the wafer together with part of the tab, with the blade realigned with the midpoint of the other separate groove to cut a second row of dies and the remainder of the tab.

    摘要翻译: 用于从晶片分离图像传感器管芯等的工艺,其中在晶片的有源侧形成有分隔每一列管芯的隔离槽对,每个槽对之间的突片基本上等于切割宽度 切割晶片的不活动侧的单个底槽,与每对分隔槽相对并跨越每对分隔槽,并将切割刀片与每对槽中的一个槽的壁的中点对准,以便在行之间切割 的死亡。 在第二实施例中,能够进行双路分离处理,其中分离槽之间的突片略大于切割刀片的宽度,其中切割刀片首先与一个分隔槽的中点对齐,以切割一排模具 从晶片与片的一部分一起,刀片与另一个分开的凹槽的中点重新对准,以切割第二排模具和突片的其余部分。

    Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same

    公开(公告)号:US06201293B1

    公开(公告)日:2001-03-13

    申请号:US09196462

    申请日:1998-11-19

    IPC分类号: H01L23495

    摘要: The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface. A first primary color filter layer is deposited over at least first inner photosite and first outer photosite, and the first primary color filter layer transmits a primary color.

    Precision dicing of silicon chips from a wafer
    5.
    发明授权
    Precision dicing of silicon chips from a wafer 失效
    晶圆硅片的精密切割

    公开(公告)号:US5521125A

    公开(公告)日:1996-05-28

    申请号:US328789

    申请日:1994-10-28

    IPC分类号: H01L21/304 H01L21/78

    CPC分类号: H01L21/78 H01L21/3043

    摘要: A wafer design and dicing technique for creating semiconductor chips from wafers. A succession of oxide layers are deposited in first and second regions of a surface of a silicon substrate. The regions are separated by a street having no oxide layers therein, and the successive oxide layers form a vertical wall with a surface normal to the surface of the silicon substrate. A shock-absorbent material is deposited in the street, forming a concave meniscus therein. The shock-absorbent material retards the trajectories of silicon particles set into motion when the wafer is diced into chips.

    摘要翻译: 用于从晶圆制造半导体芯片的晶片设计和切割技术。 一系列氧化物层沉积在硅衬底表面的第一和第二区域中。 这些区域由其中没有氧化物层的街道分开,并且连续的氧化物层形成具有与硅衬底的表面垂直的表面的垂直壁。 冲击吸收材料沉积在街上,在其中形成凹面弯月面。 当晶片切成芯片时,吸震材料阻止硅颗粒轨迹运动。

    Assembly for mounting semiconductor chips in a full-width-array image
scanner
    6.
    发明授权
    Assembly for mounting semiconductor chips in a full-width-array image scanner 失效
    用于将半导体芯片安装在全宽阵列图像扫描器中的组件

    公开(公告)号:US5545913A

    公开(公告)日:1996-08-13

    申请号:US330299

    申请日:1994-10-17

    摘要: An assembly facilitates mounting a set of abutted semiconductor chips, such as chips aligned to form a single full-page-width linear array of photosensors in a digital scanner or copier. An elongated bead of electrically conductive adhesive extends along a surface of a support substrate. A plurality of semiconductor chips is disposed along the elongated bead, each semiconductor chip including a linear array of photosensors on a front surface thereof, and a back surface attached to the support substrate by the electrically conductive adhesive. A connection block is disposed along another portion of the elongated bead, the block including a first surface contacting the bead, a second surface, and a conductor extending from the first surface to the second surface.

    摘要翻译: 组件有助于安装一组邻接的半导体芯片,例如对准的芯片,以在数字扫描器或复印机中形成光传感器的单个全页宽线性阵列。 导电粘合剂的细长珠沿着支撑基底的表面延伸。 多个半导体芯片沿着细长的凸条设置,每个半导体芯片包括前表面上的光电传感器的线性阵列和通过导电粘合剂附着到支撑基板的后表面。 连接块沿着细长的胎圈的另一部分设置,该块包括接触胎圈的第一表面,第二表面和从第一表面延伸到第二表面的导体。

    Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same
    7.
    发明授权
    Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same 有权
    具有减少滤光器薄膜边缘像素光电子的光学器件及其制造方法

    公开(公告)号:US06222180B1

    公开(公告)日:2001-04-24

    申请号:US09669124

    申请日:2000-09-25

    IPC分类号: G01J350

    摘要: The present invention relates to semiconductor devices with a reduced filter thinning of outer photosites and a method for reducing the thinning of filter layers of the outer photosites. A semiconductor device includes a main surface including a plurality of photosites and bonding pads defined in the main surface, wherein the photosites include inner photosites and outer photosites. The semiconductor device further includes a clear layer deposited over the main surface exclusive of the bonding pads and outer photosites, and a first primary color filter layer deposited over at least first inner photosite and first outer photosite, the first primary color filter transmitting a primary color.

    摘要翻译: 本发明涉及具有减小的外部光斑的过滤器薄化的半导体器件以及用于减少外部光斑的滤光层的薄化的方法。 半导体器件包括主表面,该主表面包括限定在主表面中的多个光斑和接合焊盘,其中所述光斑包括内部光斑和外部光泽。 所述半导体器件还包括沉积在所述主表面上而不是所述接合焊盘和外部光泽的清晰层,以及沉积在至少第一内部光泽和第一外部光泽上的第一原色滤色器层,所述第一原色滤色器透过原色 。

    Filter architecture for a photosensitive chip
    10.
    发明授权
    Filter architecture for a photosensitive chip 失效
    感光芯片的滤波器结构

    公开(公告)号:US5604362A

    公开(公告)日:1997-02-18

    申请号:US603513

    申请日:1996-02-20

    CPC分类号: H01L31/02162

    摘要: In a photosensitive chip suitable for full-color imaging, separate photosites on the chip correspond to different primary colors in an original image. Each primary-color photosite is filtered with a polyimide doped to a particular primary color. The red-filtering layer and the blue-filtering layer are left on the non-photosensitive portions of the main surface of the chip, and together serve as a non-reflective area which prevents stray reflections from the chip. The chip is further provided with a base layer of infrared-filtering polyimide.

    摘要翻译: 在适用于全彩色成像的感光芯片中,芯片上的独立照片对应于原始图像中的不同原色。 用掺杂到特定原色的聚酰亚胺过滤每个原色的光亮度。 红色滤光层和蓝色滤色层留在芯片的主表面的非感光部分上,并且一起用作防止来自芯片的杂散反射的非反射区域。 芯片还设置有红外滤光聚酰亚胺的基层。