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    Hybrid microfluidic and nanofluidic system
    1.
    发明授权
    Hybrid microfluidic and nanofluidic system 有权
    混合微流体和纳流体系统

    公开(公告)号：US07220345B2

    公开(公告)日：2007-05-22

    申请号：US10273935

    申请日：2002-10-18

    申请人： Paul W. Bohn ,  Jonathan V. Sweedler ,  Mark A. Shannon ,  Tzu-chi Kuo

    发明人： Paul W. Bohn ,  Jonathan V. Sweedler ,  Mark A. Shannon ,  Tzu-chi Kuo

    IPC分类号： B67D5/00

    CPC分类号： B01D57/02 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00907 ,  B01J2219/0093 ,  B01L3/502707 ,  B01L3/502761 ,  B01L2200/027 ,  B01L2300/0681 ,  B01L2300/0874 ,  B01L2300/0896 ,  B01L2400/0415 ,  B01L2400/06 ,  B01L2400/0627 ,  B82Y30/00 ,  G01N27/4473 ,  G01N27/44791

    摘要： A fluid circuit includes a membrane having a first side, a second side opposite the first side, and a pore extending from the first side to the second side. The circuit also includes a first channel containing fluid extending along the first side of the membrane and a second channel containing fluid extending along the second side of the membrane and crossing the first channel. The circuit also includes an electrical source in electrical communication with at least one of the first fluid and second fluid for selectively developing an electrical potential between fluid in the first channel and fluid in the second channel. This causes at least one component of fluid to pass through the pore in the membrane from one of the first channel and the second channel to the other of the first channel and the second channel.

    摘要翻译： 流体回路包括具有第一侧，与第一侧相对的第二侧和从第一侧向第二侧延伸的孔的膜。 电路还包括含有沿着膜的第一侧延伸的流体的第一通道和包含沿膜的第二侧延伸并与第一通道交叉的流体的第二通道。 电路还包括与第一流体和第二流体中的至少一个电连通的电源，用于选择性地在第一通道中的流体和第二通道中的流体之间形成电势。 这使得流体的至少一个成分从第一通道和第二通道中的一个通过膜中的孔到第一通道和第二通道中的另一个。

    Metal-assisted chemical etch to produce porous group III-V materials
    3.
    发明授权
    Metal-assisted chemical etch to produce porous group III-V materials 有权
    金属辅助化学蚀刻产生多孔III-V族材料

    公开(公告)号：US06762134B2

    公开(公告)日：2004-07-13

    申请号：US09989050

    申请日：2001-11-20

    申请人： Paul W. Bohn ,  Xiuling Li ,  Jonathan V. Sweedler ,  Ilesanmi Adesida

    发明人： Paul W. Bohn ,  Xiuling Li ,  Jonathan V. Sweedler ,  Ilesanmi Adesida

    IPC分类号： H01L21302

    CPC分类号： H01L21/30612 ,  H01L21/0332 ,  H01L21/3081 ,  H01L33/18 ,  H01L33/30

    摘要： A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

    摘要翻译： 在III-V族材料表面上沉积诸如Au，Pt或Au / Pd之类的金属薄的不连续层。 然后将表面蚀刻在包含HF和氧化剂的溶液中，优选短暂的时间，几小时至几小时。 优选的氧化剂是H 2 O 2。 可以选择性地控制多孔III-V族材料的形态和发光性质，作为金属沉积类型，掺杂类型，掺杂水平，金属厚度，是否在金属涂层区域或/或金属涂层区域上收集发射的函数的函数 时间。 在本发明的化学蚀刻期间不需要电辅助，其可以在存在或不存在照明的情况下进行。

    Metal-assisted chemical etch porous silicon formation method
    4.
    发明授权
    Metal-assisted chemical etch porous silicon formation method 有权
    金属辅助化学蚀刻多孔硅的形成方法

    公开(公告)号：US06790785B1

    公开(公告)日：2004-09-14

    申请号：US09662682

    申请日：2000-09-15

    申请人： Xiuling Li ,  Paul W. Bohn ,  Jonathan V. Sweedler

    发明人： Xiuling Li ,  Paul W. Bohn ,  Jonathan V. Sweedler

    IPC分类号： H01L21302

    CPC分类号： H01L21/0203

    摘要： A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

    摘要翻译： 金属如Au，Pt或Au / Pd的薄的不连续层沉积在硅表面上。 然后将表面在包含HF和氧化剂的溶液中蚀刻短暂时间，只需几秒至1小时。 优选的氧化剂是H 2 O 2。 可以选择性地控制多孔硅的形态和发光性质，作为沉积金属，Si掺杂类型，硅掺杂水平和/或蚀刻时间的函数。 在本发明的化学蚀刻期间不需要电辅助，其可以在存在或不存在照明的情况下进行。

    Structures with field responsive permeation control
    5.
    发明授权
    Structures with field responsive permeation control 失效
    具有场响应渗透控制的结构

    公开(公告)号：US5556528A

    公开(公告)日：1996-09-17

    申请号：US240244

    申请日：1994-05-10

    申请人： Paul W. Bohn ,  Wenyuan Lu

    发明人： Paul W. Bohn ,  Wenyuan Lu

    IPC分类号： A61K9/00 ,  A61N1/30 ,  G01N27/447 ,  G01N27/26

    CPC分类号： A61K9/0009 ,  A61N1/30 ,  G01N27/4473

    摘要： Devices are useful to capture or dispense target molecules and include an electric field-responsive valve unit. The valve unit includes an active control structure having at least one monomolecular layer and being up to about 10 nm thick. The active control structure is formed by a majority of molecular species with a dipolar moment greater than about 5 Debye, and operable in response to an electric field at a threshold value. A particularly preferred embodiment has the active control structure carried on a microporous membrane with pores in the nanometer range. Applications for inventive embodiments include drug delivery and target molecule capture during electrophoresis separations.

    摘要翻译： 器件可用于捕获或分配靶分子，并包括电场响应阀单元。 阀单元包括具有至少一个单分子层并且高达约10nm厚的主动控制结构。 主动控制结构由大多数具有大于约5德拜的偶极矩的分子物质形成，并且响应于阈值处的电场而可操作。 特别优选的实施方案具有在具有纳米范围内的孔的微孔膜上承载的主动控制结构。 用于发明实施方案的应用包括电泳分离期间的药物递送和靶分子捕获。