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    ION SENSOR FOR MEASURING ION CONCENTRATION OF A SOLUTION
    1.
    发明申请
    ION SENSOR FOR MEASURING ION CONCENTRATION OF A SOLUTION 有权
    用于测量离子浓度的离子传感器

    公开(公告)号：US20120048733A1

    公开(公告)日：2012-03-01

    申请号：US13041167

    申请日：2011-03-04

    申请人： Peichen Yu ,  Bing-Mau Chen ,  Chia-Hua Chang ,  Min-Hsiang Hsu ,  Chan-Hung Huang ,  Chen-Hao Kuo

    发明人： Peichen Yu ,  Bing-Mau Chen ,  Chia-Hua Chang ,  Min-Hsiang Hsu ,  Chan-Hung Huang ,  Chen-Hao Kuo

    IPC分类号： G01N27/333 ,  B82Y99/00

    CPC分类号： B82Y30/00 ,  B82Y15/00 ,  G01N27/302

    摘要： An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.

    摘要翻译： 离子传感器包括：导电基底结构，其包括基底和形成在基底上的电极膜; 从电极膜突出的多个离子敏感纳米棒; 以及密封剂，其围绕所述导电基底结构，围绕所述离子敏感纳米棒，并形成有用于暴露所述离子敏感纳米棒的窗口。 每个离子敏感纳米棒具有导电芯和形成在导电芯上并包围导电芯的离子敏感层。 离子敏感材料表现出吸收其上感兴趣的离子的离子选择性，用于诱导与感兴趣的离子的浓度相对应的表面电位。

    Ion sensor for measuring ion concentration of a solution
    2.
    发明授权
    Ion sensor for measuring ion concentration of a solution 有权
    用于测量溶液离子浓度的离子传感器

    公开(公告)号：US08431001B2

    公开(公告)日：2013-04-30

    申请号：US13041167

    申请日：2011-03-04

    申请人： Peichen Yu ,  Bing-Mau Chen ,  Chia-Hua Chang ,  Min-Hsiang Hsu ,  Chan-Hung Huang ,  Chen-Hao Kuo

    发明人： Peichen Yu ,  Bing-Mau Chen ,  Chia-Hua Chang ,  Min-Hsiang Hsu ,  Chan-Hung Huang ,  Chen-Hao Kuo

    IPC分类号： G01N27/333

    CPC分类号： B82Y30/00 ,  B82Y15/00 ,  G01N27/302

    摘要： An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.

    摘要翻译： 离子传感器包括：导电基底结构，其包括基底和形成在基底上的电极膜; 从电极膜突出的多个离子敏感纳米棒; 以及密封剂，其围绕所述导电基底结构，围绕所述离子敏感纳米棒，并形成有用于暴露所述离子敏感纳米棒的窗口。 每个离子敏感纳米棒具有导电芯和形成在导电芯上并包围导电芯的离子敏感层。 离子敏感材料表现出吸收其上感兴趣的离子的离子选择性，用于诱导与感兴趣的离子的浓度相对应的表面电位。

    Three-dimensional indium-tin-oxide electrode, method of fabricating the same, device of fabricating the same, and method of fabricating solar cell comprising the same
    3.
    发明申请
    Three-dimensional indium-tin-oxide electrode, method of fabricating the same, device of fabricating the same, and method of fabricating solar cell comprising the same 审中-公开
    三维铟锡氧化物电极，其制造方法，其制造方法及其制造方法

    公开(公告)号：US20100307592A1

    公开(公告)日：2010-12-09

    申请号：US12585641

    申请日：2009-09-21

    申请人： Chia-Hua Chang ,  Pei-Chen Yu ,  Min-Hsiang Hsu ,  Kung-Hwa Wei ,  Ming-Shin Su

    发明人： Chia-Hua Chang ,  Pei-Chen Yu ,  Min-Hsiang Hsu ,  Kung-Hwa Wei ,  Ming-Shin Su

    IPC分类号： H01L31/0224 ,  H01L21/28 ,  H01B5/00 ,  B05D5/12 ,  C23C16/00

    CPC分类号： C23C14/086 ,  C23C14/225 ,  H01L51/442 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： A three-dimensional ITO electrode and the method of fabricating the same are disclosed. The three-dimensional ITO electrode of the present invention has a conductive layer and a plurality of ITO nanorods formed on the conductive layer, wherein the length range of the ITO nanorods can vary from 10 nm to 1500 nm. The best length is about 50 nm-200 nm for organic solar cells. When applied into organic optoelectronic devices such as organic solar cells and organic light-emitting diodes (OLEDs), the three-dimensional structure of the ITO electrode may increase the contact area to the active layer, thus improving the electric current collecting efficiency and uniformity of current spreading (flowing). Also, an evaporator, a solar cell comprising the above three-dimensional ITO electrode, and the method of fabricating the solar cell are disclosed.

    摘要翻译： 公开了一种三维ITO电极及其制造方法。 本发明的三维ITO电极具有形成在导电层上的导电层和多个ITO纳米棒，其中ITO纳米棒的长度范围可以在10nm至1500nm之间变化。 有机太阳能电池的最佳长度约为50nm-200nm。 当应用于有机太阳能电池和有机发光二极管（OLED）等有机光电子器件时，ITO电极的三维结构可能增加与有源层的接触面积，从而提高电流收集效率和均匀性 电流扩散（流动）。 此外，公开了一种蒸发器，包括上述三维ITO电极的太阳能电池及其制造太阳能电池的方法。

    Methods of fabricating a micromechanical structure
    6.
    发明授权
    Methods of fabricating a micromechanical structure 有权
    制造微机械结构的方法

    公开(公告)号：US08278724B2

    公开(公告)日：2012-10-02

    申请号：US12254493

    申请日：2008-10-20

    申请人： Chia-Hua Chang ,  Hua-Shu Wu ,  Tsung-Mu Lai

    发明人： Chia-Hua Chang ,  Hua-Shu Wu ,  Tsung-Mu Lai

    IPC分类号： H01L27/14

    CPC分类号： B81C1/00142

    摘要： Methods of fabricating a microelectromechanical structure are provided. An exemplary embodiment of a method of fabricating a microelectromechanical structure comprises providing a substrate. A first patterned sacrificial layer is formed on portions of the substrate, the first patterned sacrificial layer comprises a bulk portion and a protrusion portion. A second patterned sacrificial layer is formed over the first sacrificial layer, covering the protrusion portion and portions of the bulk portion of the first patterned sacrificial layer, wherein the second patterned sacrificial layer does not cover sidewalls of the first patterned sacrificial layer. An element layer is formed over the substrate, covering portions of the substrate, the first patterned sacrificial layer and second patterned sacrificial layer. The first and second patterned sacrificial layers are removed, leaving a microstructure on the substrate.

    摘要翻译： 提供了制造微机电结构的方法。 制造微机电结构的方法的示例性实施例包括提供基底。 第一图案化牺牲层形成在衬底的部分上，第一图案化牺牲层包括主体部分和突出部分。 第二图案化牺牲层形成在第一牺牲层上，覆盖突出部分和第一图案化牺牲层的主体部分的部分，其中第二图案化牺牲层不覆盖第一图案化牺牲层的侧壁。 元件层形成在衬底上，覆盖衬底的部分，第一图案化牺牲层和第二图案化牺牲层。 去除第一和第二图案化牺牲层，在基底上留下微结构。

    IMAGE CAPTURE METHOD AND PORTABLE COMMUNICATION DEVICE
    7.
    发明申请
    IMAGE CAPTURE METHOD AND PORTABLE COMMUNICATION DEVICE 有权
    图像捕获方法和便携式通信设备

    公开(公告)号：US20110267524A1

    公开(公告)日：2011-11-03

    申请号：US12915015

    申请日：2010-10-29

    申请人： Chien-Hsin Lee ,  Chia-Hua Chang ,  Sung-Hao Lin

    发明人： Chien-Hsin Lee ,  Chia-Hua Chang ,  Sung-Hao Lin

    IPC分类号： H04N5/232 ,  H04N5/225

    CPC分类号： H04N5/23248 ,  H04N5/23212 ,  H04N5/23216 ,  H04N5/23219 ,  H04N5/23258 ,  H04N5/23293

    摘要： An image capture method is provided for a portable communication device having a display unit, which real-time displays an image at least including an object to be shot. The method includes sensing a moving acceleration of the portable communication device based on a first gravity-sensing threshold value. A touch focus signal is received so that the portable communication device focuses on one of the objects to be the focus-lock object. Then, according to the touch focus signal, the first gravity-sensing threshold value is changed to a second gravity-sensing threshold value, which is larger than the first gravity-sensing threshold value. The image at least including the focus-lock object is captured.

    摘要翻译： 提供了一种用于具有显示单元的便携式通信设备的图像捕获方法，该显示单元实时显示至少包括要被拍摄的对象的图像。 该方法包括基于第一重力感测阈值来感测便携式通信设备的移动加速度。 接收到触摸对焦信号，使得便携式通信装置将对象中的一个对焦为对焦锁定对象。 然后，根据触摸对焦信号，将第一重力感测阈值变更为大于第一重力感测阈值的第二重力感测阈值。 捕获至少包含对焦锁定对象的图像。

    METHOD FOR FABRICATING CHARGE-TRAPPING MEMORY
    9.
    发明申请
    METHOD FOR FABRICATING CHARGE-TRAPPING MEMORY 有权
    用于制造电荷捕获存储器的方法

    公开(公告)号：US20080025087A1

    公开(公告)日：2008-01-31

    申请号：US11460497

    申请日：2006-07-27

    申请人： Yen-Hao Shih ,  Jung-Yu Hsieh ,  Yi-Lin Yang ,  Chia-Hua Chang ,  Jenn-Gwo Hwu

    发明人： Yen-Hao Shih ,  Jung-Yu Hsieh ,  Yi-Lin Yang ,  Chia-Hua Chang ,  Jenn-Gwo Hwu

    IPC分类号： G11C16/04

    CPC分类号： H01L21/76838 ,  H01L29/66833 ,  H01L29/792

    摘要： A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350° C. to 450° C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.

    摘要翻译： 提供了一种电荷俘获存储器件的制造方法。 该方法包括形成至少具有电荷捕获介质的堆叠结构。 然后在器件制造过程之后对堆叠结构进行氢气中的退火处理。 退火过程在约350℃至450℃的温度下进行，氢气的浓度大于0.5摩尔％。

    Thickening method of an electroforming shim
    10.
    发明申请
    Thickening method of an electroforming shim 审中-公开
    电铸垫片的增稠方法

    公开(公告)号：US20070039826A1

    公开(公告)日：2007-02-22

    申请号：US11206274

    申请日：2005-08-18

    申请人： Chia-Hua Chang ,  Cherng-Yuh Su ,  Jen-Chin Wu ,  Jun-Lung Hsi

    发明人： Chia-Hua Chang ,  Cherng-Yuh Su ,  Jen-Chin Wu ,  Jun-Lung Hsi

    IPC分类号： C25D1/10

    CPC分类号： C25D1/10

    摘要： A thickening method of an electroforming shim is provided to increase the thickness of a metal shim. In this embodiment, an active solder with a rare earth element is used to increase the moisture on the substrate surface for the solder during the combining process. Afterwards the oxides of the rare earth element are expelled by mechanical stirring to produce a clean contact surface. The melted fillers moisturize on the substrate surface to achieve the combination.

    摘要翻译： 提供电铸垫片的增厚方法以增加金属垫片的厚度。 在本实施例中，使用具有稀土元素的有源焊料来增加组合工艺期间焊料在衬底表面上的水分。 之后，通过机械搅拌排出稀土元素的氧化物以产生干净的接触表面。 熔化的填料在基材表面上保湿以达到组合。