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公开(公告)号：US07603648B2
公开(公告)日：2009-10-13
申请号：US11174336
申请日：2005-06-29
申请人： Peng Liu , Vivek Singh , Bin Hu
发明人： Peng Liu , Vivek Singh , Bin Hu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： Systems, techniques, and approaches to quickly generate mask patterns, synthesize near-fields, and design masks. In one aspect, a mask may be designed by modeling the transmitted field using a library of corrections and a fast field model.
摘要翻译： 快速生成掩模图案，合成近场和设计蒙版的系统，技术和方法。 在一个方面，可以通过使用校正库和快速场模型对所发送的场进行建模来设计掩模。
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公开(公告)号：US20050244728A1
公开(公告)日：2005-11-03
申请号：US11174336
申请日：2005-06-29
申请人： Peng Liu , Vivek Singh , Bin Hu
发明人： Peng Liu , Vivek Singh , Bin Hu
CPC分类号： G06F17/5081 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： Systems, techniques, and approaches to quickly generate mask patterns, synthesize near-fields, and design masks. In one aspect, a mask may be designed by modeling the transmitted field using a library of corrections and a fast field model.
摘要翻译： 快速生成掩模图案，合成近场和设计蒙版的系统，技术和方法。 在一个方面，可以通过使用校正库和快速场模型对所发送的场进行建模来设计掩模。
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公开(公告)号：US08778605B2
公开(公告)日：2014-07-15
申请号：US13762083
申请日：2013-02-07
申请人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
发明人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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公开(公告)号：US20090170012A1
公开(公告)日：2009-07-02
申请号：US12316064
申请日：2008-12-09
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
IPC分类号： G03F1/00
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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公开(公告)号：US20070094959A1
公开(公告)日：2007-05-03
申请号：US11242165
申请日：2005-09-30
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
IPC分类号： E04C2/52
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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6.发明申请Determining an optimizaton for generating a pixelated photolithography mask with high resolution imaging capability 审中-公开确定用于产生具有高分辨率成像能力的像素化光刻掩模的优化公开(公告)号：US20070006113A1
公开(公告)日：2007-01-04
申请号：US11173394
申请日：2005-06-30
申请人： Bin Hu , Vivek Singh , Bikram Baidya , Kenny Toh , Srinivas Bollepalli , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Bikram Baidya , Kenny Toh , Srinivas Bollepalli , Yan Borodovsky
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A pixelated photolithography mask is optimized for high resolution microelectronic processing. In one embodiment, the invention includes synthesizing a pixelated photolithography mask, applying a pixel flipping function to the mask, comparing the resulting mask to a desired result, and synthesizing an optimized pixelated binary photolithography mask using the function.
摘要翻译： 像素化光刻掩模被优化用于高分辨率微电子处理。 在一个实施例中，本发明包括合成像素化光刻掩模，向掩模施加像素翻转函数，将所得到的掩模与期望的结果进行比较，以及使用该功能合成优化的像素化二值光刻掩模。
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公开(公告)号：US08404403B2
公开(公告)日：2013-03-26
申请号：US12824037
申请日：2010-06-25
申请人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
发明人： Shem Ogadhoh , Raguraman Venkatesan , Kevin J. Hooker , Sungwon Kim , Bin Hu , Vivek Singh , Bikram Baidya , Prasad Narendra Atkar , Seongtae Jeong
IPC分类号： G03F1/68
摘要： Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.
摘要翻译： 这里描述的是要连续成像以在诸如半导体晶片的衬底上打印复合图案的一组掩模的掩模设计和建模。 本文进一步描述的是使用该组掩模对衬底进行双重图案化的方法。 这里还描述了一种基于掩模级别中的另一个的预测图案轮廓来校正掩模级中的一个的绘制图案的方法。 本文还描述了一种对光致抗蚀剂施加到非均匀衬底上的掩模级的抗蚀剂轮廓轮廓建模方法，以及预测两个掩模的布尔运算的抗蚀剂轮廓的方法。
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公开(公告)号：US07512926B2
公开(公告)日：2009-03-31
申请号：US11242165
申请日：2005-09-30
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
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公开(公告)号：US08112726B2
公开(公告)日：2012-02-07
申请号：US12316064
申请日：2008-12-09
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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公开(公告)号：US20090100400A1
公开(公告)日：2009-04-16
申请号：US12316085
申请日：2008-12-09
申请人： Bin Hu , Vivek Singh , Yan Borodovsky
发明人： Bin Hu , Vivek Singh , Yan Borodovsky
IPC分类号： G06F17/50
CPC分类号： G03F7/70283 , G03F1/32 , G03F1/36 , G03F7/70433 , G03F7/705
摘要： The present invention discloses a method of designing a set of two tiled masks, as well as, a mask including: a first tile, the first tile being transparent to a light, the first tile having a first characteristic linear dimension that is 15% or less of a wavelength of the light; a second tile, the second tile being transparent to the light, the second tile having a second characteristic linear dimension that is 15% or less of the wavelength of the light; and a third tile, the third tile being opaque to the light, the third tile having a third characteristic linear dimension that is 15% or less of the wavelength of the light.
摘要翻译： 本发明公开了一种设计一组两个平铺掩模的方法，以及掩模，包括：第一瓦片，第一瓦片对于光是透明的，第一瓦片具有15％的第一特征线性尺寸或 较少的波长的光; 第二瓦片，所述第二瓦片对于所述光是透明的，所述第二瓦片具有光的波长的15％或更小的第二特征线性尺寸; 以及第三瓦片，所述第三瓦片对于所述光不透明，所述第三瓦片具有光的波长的15％以下的第三特征线性尺寸。
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