公开(公告)号：US20110097478A1

公开(公告)日：2011-04-28

申请号：US12978393

申请日：2010-12-23

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01G4/00 ,  C23C16/06 ,  C23C16/448 ,  C04B35/472

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07862857B2

公开(公告)日：2011-01-04

申请号：US12768374

申请日：2010-04-27

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01G4/10

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07705382B2

公开(公告)日：2010-04-27

申请号：US11924716

申请日：2007-10-26

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07344589B2

公开(公告)日：2008-03-18

申请号：US11328582

申请日：2006-01-10

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/40

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07012292B1

公开(公告)日：2006-03-14

申请号：US09200495

申请日：1998-11-25

申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

公开(公告)号：US06984417B2

公开(公告)日：2006-01-10

申请号：US09928860

申请日：2001-08-13

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/06 ,  C23C16/00

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US06316797B1

公开(公告)日：2001-11-13

申请号：US09251890

申请日：1999-02-19

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01L2976

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中相应的电容器面积（即横向缩放）在约104至约10-2mum2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US6100200A

公开(公告)日：2000-08-08

申请号：US218563

申请日：1998-12-21

申请人： Peter C. Van Buskirk ,  Michael W. Russell ,  Daniel J. Vestyck ,  Scott R. Summerfelt ,  Theodore S. Moise

发明人： Peter C. Van Buskirk ,  Michael W. Russell ,  Daniel J. Vestyck ,  Scott R. Summerfelt ,  Theodore S. Moise

IPC分类号： C23C14/04 ,  C23C14/34 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L28/55 ,  C23C14/046 ,  C23C14/34 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/2855

摘要： The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.

摘要翻译： 本发明是涉及在半导体衬底中的沟槽中沉积金属化层的方法。 本发明的重点是依次执行加热沉积和蚀刻单元工艺以在通孔或沟槽的内表面上提供良好的金属保形膜。 沉积和蚀刻步骤也可以同时进行。

公开(公告)号：US20130334628A1

公开(公告)日：2013-12-19

申请号：US13992118

申请日：2010-12-07

申请人： Daniel J. Vestyck

发明人： Daniel J. Vestyck

IPC分类号： B81C1/00

CPC分类号： B81C1/00523 ,  B81C1/00936

摘要： A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

摘要翻译： 描述了在由机械装置和基板组成的微机电系统（MEMS）或纳米机电系统（NEMS）的蒸气氢氟酸（VHF）释放期间避免静摩擦的方法。 在衬底和牺牲氧化物层之间和/或器件层和牺牲氧化物层之间和/或在器件层的背离牺牲氧化物层的一侧上提供氮化硅层，并将其转化为较厚的铵 六氟硅酸盐与VHF同时除去一部分牺牲氧化物。 六氟硅酸铵用作临时支撑物，垫片，楔形物或系绳，其限制制造过程中的装置运动，并且随后在加热和/或减压下通过升华除去。

公开(公告)号：US09139425B2

公开(公告)日：2015-09-22

申请号：US13992118

申请日：2010-12-07

申请人： Daniel J. Vestyck

发明人： Daniel J. Vestyck

IPC分类号： H01L21/00 ,  H01L29/84 ,  B81C1/00

CPC分类号： B81C1/00523 ,  B81C1/00936

摘要： A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

摘要翻译： 描述了在由机械装置和基板组成的微机电系统（MEMS）或纳米机电系统（NEMS）的蒸气氢氟酸（VHF）释放期间避免静摩擦的方法。 在衬底和牺牲氧化物层之间和/或器件层和牺牲氧化物层之间和/或在器件层的背离牺牲氧化物层的一侧上提供氮化硅层，并将其转化为较厚的铵 六氟硅酸盐与VHF同时除去一部分牺牲氧化物。 六氟硅酸铵用作临时支撑物，垫片，楔形物或系绳，其限制制造过程中的装置运动，并且随后在加热和/或减压下通过升华除去。