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    Regionally thinned microstructures for microbolometers
    1.
    发明授权
    Regionally thinned microstructures for microbolometers 失效
    用于微电表的局部变薄的微结构

    公开(公告)号：US07303997B1

    公开(公告)日：2007-12-04

    申请号：US11544591

    申请日：2006-10-10

    申请人： Philips Laou ,  Merel Philippe

    发明人： Philips Laou ,  Merel Philippe

    IPC分类号： H01L21/302

    CPC分类号： B81C1/00142 ,  B81B2201/0207 ,  B81B2201/0278 ,  B81B2203/0109 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  G01J5/20

    摘要： Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 μm) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

    摘要翻译： 通过在硅衬底上沉积氮化硅薄膜（0.6μm），在衬底上形成微桥，蚀刻薄膜以限定像素区中的窗口，使窗户变薄，释放氮化硅，从而产生具有区域薄化微桥的微伏热计 在桥上沉积导电YBaCuO膜，在YBaCuO膜上沉积导电膜（Au），并去除YBaCuO和导电膜的选定区域。

    Methods of forming field emission devices with self-aligned gate structure
    2.
    发明授权
    Methods of forming field emission devices with self-aligned gate structure 失效
    用自对准栅极结构形成场发射器件的方法

    公开(公告)号：US5857885A

    公开(公告)日：1999-01-12

    申请号：US743279

    申请日：1996-11-04

    申请人： Philips Laou ,  Ishiang Shih

    发明人： Philips Laou ,  Ishiang Shih

    IPC分类号： H01J9/02

    CPC分类号： H01J9/025

    摘要： Methods of forming a field emission device with self-aligned gate structure, comprising a substrate on which at least one wedge or tip electrode and one accelerating or gate electrode are provided. The only photolithographic step involved is to pattern an integrated gate electrode opening on high quality, thermally grown oxide which can withstand a strong electric field. The formation of the emissive electrode by etching starts at the edge of the integrated gate electrode opening defined by the oxide material layer. As a result, the distance between the emissive electrode and the gate electrode is minimum. Simple wet chemical etching may be used to form the emissive electrode.

    摘要翻译： 形成具有自对准栅极结构的场发射器件的方法，包括其上设置有至少一个楔形或尖端电极和一个加速栅极或栅电极的衬底。 所涉及的唯一的光刻步骤是在能够承受强电场的高质量的热生长氧化物上图案化集成栅电极开口。 通过蚀刻形成发射电极在由氧化物层限定的集成栅电极开口的边缘处开始。 结果，发射电极和栅电极之间的距离是最小的。 可以使用简单的湿化学蚀刻来形成发射电极。

    Infrared imager
    4.
    发明申请
    Infrared imager 失效
    红外成像仪

    公开(公告)号：US20070029482A1

    公开(公告)日：2007-02-08

    申请号：US11197325

    申请日：2005-08-05

    申请人： Philips Laou ,  Linh Ngo Phong

    发明人： Philips Laou ,  Linh Ngo Phong

    IPC分类号： H01L25/00

    CPC分类号： H01L27/14669 ,  H01L27/14632 ,  H04N5/33

    摘要： An infrared imager for detecting infrared (IR) radiation of a scene in a field of view (FOV) of an optical system and converting the IR into a visible image wherein the imager consists of an array of uncooled microbolometers in a focal plane of the optical system and a array of light emitting diode (LED) or liquid crystal display (LCD) elements. The IR radiation collected by the microbolometer produces a change in an electrical output applied to electronic circuitry connected to the array of LED s or LCDs. The electronic circuitry controls the intensity of a LED element or the reflectance of an LCD element. As a result, the imager converts the infrared radiation from the scene into visible light. The light reflected from the LCD or produced by LEDs in an array constitutes the scene image

    摘要翻译： 一种用于检测光学系统的视野（FOV）中的场景的红外（IR）辐射并将该红外成像器转换为可见光图像的红外成像器，其中该成像器由该光学器件的焦平面中的非制冷微波计数器阵列组成 系统和一系列发光二极管（LED）或液晶显示（LCD）元件。 由微热辐射热计收集的红外辐射产生施加到连接到LED或LCD阵列的电子电路的电输出的变化。 电子电路控制LED元件的强度或LCD元件的反射率。 结果，成像器将来自场景的红外辐射转换成可见光。 从LCD反射或由阵列中的LED产生的光构成场景图像

    Microstructure for infrared detector and method of making same
    5.
    发明授权
    Microstructure for infrared detector and method of making same 失效
    红外探测器微结构及其制作方法

    公开(公告)号：US06198098B1

    公开(公告)日：2001-03-06

    申请号：US09085267

    申请日：1998-05-26

    申请人： Philips Laou

    发明人： Philips Laou

    IPC分类号： H01L3109

    CPC分类号： G01J5/20

    摘要： Microstructure for bolometer for high infrared sensitivity and detectivity having a corrugated air bridge microstructure which provides a large area, low infrared reflection and large infrared absorption so as to increase the sensitivity and detectivity.

    摘要翻译： 用于高红外灵敏度和检测率的测辐射热计的微结构具有波纹空气桥微结构，其提供大面积，低红外反射和大的红外吸收，以增加灵敏度和检测性。

    Infrared imager
    6.
    发明授权
    Infrared imager 失效
    红外成像仪

    公开(公告)号：US07247850B2

    公开(公告)日：2007-07-24

    申请号：US11197325

    申请日：2005-08-05

    申请人： Philips Laou ,  Linh Ngo Phong

    发明人： Philips Laou ,  Linh Ngo Phong

    IPC分类号： G01J5/02

    CPC分类号： H01L27/14669 ,  H01L27/14632 ,  H04N5/33

    摘要： An infrared imager for detecting infrared (IR) radiation of a scene in a field of view (FOV) of an optical system and converting the IR into a visible image wherein the imager consists of an array of uncooled microbolometers in a focal plane of the optical system and a array of light emitting diode (LED) or liquid crystal display (LCD) elements. The IR radiation collected by the microbolometer produces a change in an electrical output applied to electronic circuitry connected to the array of LEDs or LCDs. The electronic circuitry controls the intensity of a LED element or the reflectance of an LCD element. As a result, the imager converts the infrared radiation from the scene into visible light. The light reflected from the LCD or produced by LEDs in an array constitutes the scene image.

    摘要翻译： 一种用于检测光学系统的视野（FOV）中的场景的红外（IR）辐射并将该红外成像器转换为可见光图像的红外成像器，其中该成像器由该光学器件的焦平面中的非制冷微波计数器阵列组成 系统和一系列发光二极管（LED）或液晶显示（LCD）元件。 由微热辐射计收集的红外辐射产生施加到连接到LED或LCD阵列的电子电路的电输出的变化。 电子电路控制LED元件的强度或LCD元件的反射率。 结果，成像器将来自场景的红外辐射转换成可见光。 从LCD反射或由阵列中的LED产生的光构成场景图像。