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    Physically unclonable function based on programming voltage of magnetoresistive random-access memory
    2.
    发明授权
    Physically unclonable function based on programming voltage of magnetoresistive random-access memory 有权
    基于磁阻随机存取存储器编程电压的物理不可克隆功能

    公开(公告)号：US09343135B2

    公开(公告)日：2016-05-17

    申请号：US14072537

    申请日：2013-11-05

    Applicant: QUALCOMM Incorporated

    Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

    IPC: G11C11/16 ,  G09C1/00 ,  H04L9/08 ,  H04L9/32

    CPC classification number: G11C11/1695 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

    Abstract: One feature pertains to a method of implementing a physically unclonable function. The method includes initializing an array of magnetoresistive random-access memory (MRAM) cells to a first logical state, where each of the MRAM cells have a random transition voltage that is greater than a first voltage and less than a second voltage. The transition voltage represents a voltage level that causes the MRAM cells to transition from the first logical state to a second logical state. The method further includes applying a programming signal voltage to each of the MRAM cells of the array to cause at least a portion of the MRAM cells of the array to randomly change state from the first logical state to the second logical state, where the programming signal voltage is greater than the first voltage and less than the second voltage.

    Abstract translation: 一个特征涉及实现物理上不可克隆功能的方法。 该方法包括将磁阻随机存取存储器（MRAM）单元的阵列初始化为第一逻辑状态，其中每个MRAM单元具有大于第一电压且小于第二电压的随机转变电压。 转换电压表示使MRAM单元从第一逻辑状态转换到第二逻辑状态的电压电平。 该方法还包括将编程信号电压施加到阵列的每个MRAM单元，以使阵列的MRAM单元的至少一部分随机地将状态从第一逻辑状态改变到第二逻辑状态，其中编程信号 电压大于第一电压且小于第二电压。

    Method and apparatus for generating random numbers using a physical entropy source
    4.
    发明授权
    Method and apparatus for generating random numbers using a physical entropy source 有权
    使用物理熵源产生随机数的方法和装置

    公开(公告)号：US09164729B2

    公开(公告)日：2015-10-20

    申请号：US13759130

    申请日：2013-02-05

    Applicant: QUALCOMM Incorporated

    Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

    IPC: G06F7/58

    CPC classification number: G06F7/58 ,  G06F7/588

    Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

    Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。

    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL- INSULATOR-METAL DEVICE
    5.
    发明申请
    PHYSICALLY UNCLONABLE FUNCTION BASED ON BREAKDOWN VOLTAGE OF METAL- INSULATOR-METAL DEVICE 有权
    基于金属绝缘体金属器件断开电压的物理不可靠功能

    公开(公告)号：US20150074433A1

    公开(公告)日：2015-03-12

    申请号：US14072735

    申请日：2013-11-05

    Applicant: QUALCOMM Incorporated

    Inventor： Xiaochun Zhu ,  Steven M. Millendorf ,  Xu Guo ,  David M. Jacobson ,  Kangho Lee ,  Seung H. Kang ,  Matthew Michael Nowak

    IPC: G06F21/70 ,  G06F1/26

    CPC classification number: G06F21/70 ,  G06F1/26 ,  G09C1/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  G11C17/02 ,  G11C17/14 ,  H04L9/0866 ,  H04L9/3278 ,  H04L2209/12

    Abstract: One feature pertains to a method of implementing a physically unclonable function that includes providing an array of metal-insulator-metal (MIM) devices, where the MIM devices are configured to represent a first resistance state or a second resistance state and a plurality of the MIM devices are initially at the first resistance state. The MIM devices have a random breakdown voltage that is greater than a first voltage and less than a second voltage, where the breakdown voltage represents a voltage that causes the MIM devices to transition from the first resistance state to the second resistance state. The method further includes applying a signal line voltage to the MIM devices to cause a portion of the MIM devices to randomly breakdown and transition from the first resistance state to the second resistance state, the signal line voltage greater than the first voltage and less than the second voltage.

    Abstract translation: 一个特征涉及实现物理上不可克隆的功能的方法，其包括提供金属 - 绝缘体 - 金属（MIM）器件的阵列，其中MIM器件被配置为表示第一电阻状态或第二电阻状态，并且多个 MIM器件最初处于第一电阻状态。 MIM器件具有大于第一电压且小于第二电压的随机击穿电压，其中击穿电压表示使MIM器件从第一电阻状态转变到第二电阻状态的电压。 该方法还包括向MIM器件施加信号线电压以使MIM器件的一部分随机击穿并从第一电阻状态转变到第二电阻状态，信号线电压大于第一电压并小于 第二电压。

    METHOD AND DEVICE FOR ESTIMATING DAMAGE TO MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS
    7.
    发明申请
    METHOD AND DEVICE FOR ESTIMATING DAMAGE TO MAGNETIC TUNNEL JUNCTION (MTJ) ELEMENTS 审中-公开
    用于估计对磁性隧道结（MTJ）元件的损伤的方法和装置

    公开(公告)号：US20150019147A1

    公开(公告)日：2015-01-15

    申请号：US13939243

    申请日：2013-07-11

    Applicant: QUALCOMM Incorporated

    Inventor： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    IPC: G01R31/26

    CPC classification number: G01R31/26 ,  G11B5/3166 ,  G11C11/16 ,  G11C29/50 ,  G11C2029/5002 ,  H01L43/12

    Abstract: For first and second magnetic tunnel junction (MTJ) elements, a trend in a relationship between an electrical characteristic of the first and second MTJ elements and an area of the first and second MTJ elements may be determined. Damage to a sidewall of the first and second MTJ elements may be estimated from the trend. At least one operating parameter of an MTJ manufacturing apparatus may be modified based on an X or Y intercept a trend line.

    Abstract translation: 对于第一和第二磁性隧道结（MTJ）元件，可以确定第一和第二MTJ元件的电特性与第一和第二MTJ元件的面积之间的关系的趋势。 可以从趋势估计对第一和第二MTJ元件的侧壁的损坏。 可以基于X或Y拦截趋势线来修改MTJ制造装置的至少一个操作参数。

    Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM)
    8.
    发明授权
    Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) 有权
    降低自旋转矩磁阻随机存取存储器（STT-MRAM）中的源负载效应

    公开(公告)号：US08913423B2

    公开(公告)日：2014-12-16

    申请号：US13772576

    申请日：2013-02-21

    Applicant: QUALCOMM Incorporated

    Inventor： Kangho Lee ,  Seung H. Kang ,  Xiaochun Zhu

    IPC: G11C11/00 ,  G11C15/02 ,  H01L43/02 ,  G06F17/50 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G06F17/5068 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/12

    Abstract: An apparatus includes a memory cell including a magnetic tunnel junction (MTJ) structure coupled between a bit line and a source line. The MTJ structure includes a free layer coupled to the bit line and a pinned layer. A magnetic moment of the free layer is substantially parallel to a magnetic moment of the pinned layer in a first state and substantially antiparallel to the magnetic moment of the pinned layer in a second state. A physical dimension of the pinned layer produces an unbalanced offset magnetic field which corresponds to a first switching current of the MTJ structure that enables switching from the first state to the second state when a first voltage is applied to the bit line and corresponds to a second switching current that enables switching from the second state to the first state when the first voltage is applied to the source line.

    Abstract translation: 一种装置包括存储单元，其包括耦合在位线和源极线之间的磁性隧道结（MTJ）结构。 MTJ结构包括耦合到位线和固定层的自由层。 自由层的磁矩基本上平行于处于第一状态的被钉扎层的磁矩，并且在第二状态下基本上与销钉层的磁矩反平行。 钉扎层的物理尺寸产生不平衡偏移磁场，其对应于MTJ结构的第一开关电流，当第一电压施加到位线并且对应于第二电压时，能够从第一状态切换到第二状态 当第一电压施加到源极线时，切换电流能够从第二状态切换到第一状态。

    METHOD AND APPARATUS FOR GENERATING RANDOM NUMBERS USING A PHYSICAL ENTROPY SOURCE
    10.
    发明申请
    METHOD AND APPARATUS FOR GENERATING RANDOM NUMBERS USING A PHYSICAL ENTROPY SOURCE 有权
    使用物理熵源产生随机数的方法和装置

    公开(公告)号：US20140222880A1

    公开(公告)日：2014-08-07

    申请号：US13759130

    申请日：2013-02-05

    Applicant: QUALCOMM INCORPORATED

    Inventor： Wenqing Wu ,  Peiyuan Wang ,  Raghu Sagar Madala ,  Senthil Kumar Govindaswamy ,  Kendrick H. Yuen ,  Robert P. Gilmore ,  Jung Pill Kim ,  Seung H. Kang

    IPC: G06F7/58

    CPC classification number: G06F7/58 ,  G06F7/588

    Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.

    Abstract translation: 一种用于通过检测物理熵源是处于状态A还是处于状态B从具有状态A和状态B的物理熵源生成随机二进制序列的方法和装置，试图移动物理熵源的状态 以小于100％确定性的概率方式处于相反状态，并且在尝试移位之前基于检测到的状态和物理熵源的状态产生四个输出中的一个。 将输出放置在第一和第二队列中，并从每个队列成对提取。 基于从每个队列提取的序列输出随机二进制位。

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