公开(公告)号：US06610354B2

公开(公告)日：2003-08-26

申请号：US09886174

申请日：2001-06-18

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： C23C1640

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

公开(公告)号：US6055927A

公开(公告)日：2000-05-02

申请号：US782169

申请日：1997-01-14

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/42 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

公开(公告)号：US06825134B2

公开(公告)日：2004-11-30

申请号：US10254627

申请日：2002-09-24

申请人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

发明人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

IPC分类号： H01L21471

CPC分类号： C23C16/45542 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66765

摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

公开(公告)号：US07122962B2

公开(公告)日：2006-10-17

申请号：US10460837

申请日：2003-06-11

申请人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

发明人： Kam S. Law ,  Quanyuan Shang ,  Takako Takehara ,  Taekyung Won ,  William R. Harshbarger ,  Dan Maydan

IPC分类号： H01J17/49

CPC分类号： H01J11/38 ,  H01J11/12

摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

摘要翻译： 包括低k电介质层的等离子体显示面板。 在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。 在另一个实施例中，电介质层包括Black Diamond TM层。 在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

公开(公告)号：US06468601B1

公开(公告)日：2002-10-22

申请号：US09523538

申请日：2000-03-10

申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Dan Maydan

IPC分类号： B05D306

CPC分类号： C23C16/4405

摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

摘要翻译： 用于在用于沉积氮化硅的处理室中减少白色粉末的生产的装置和方法。 该方法的步骤包括加热处理室壁的至少一部分; 提供覆盖所述处理室的壁的主要部分的衬垫; 提供连接到处理室内部的远程室; 导致远程室中的清洁气体的等离子体; 并将清洁气体的等离子体的一部分流入处理室。 该装置包括具有壁的沉积室; 用于加热壁的装置，热耦合到壁的装置; 覆盖壁的大部分的衬垫; 设置在室外的远程室; 活化源，其适于将能量输送到所述远程室中; 用于将前体气体从远程气体供给流入远程室的第一导管，其中激活源被激活以形成反应性物质; 以及用于使反应物质从远程室流入沉积室的第二导管。

公开(公告)号：US5788778A

公开(公告)日：1998-08-04

申请号：US707491

申请日：1996-09-16

申请人： Quanyuan Shang ,  Kam S. Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Kam S. Law ,  Dan Maydan

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3065 ,  B08B7/04 ,  B08B5/00 ,  C03C15/00 ,  C03C23/06

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  Y10S156/916

摘要： A method for cleaning a deposition chamber that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber that is outside of the deposition chamber, activating the precursor gas in the remote chamber via a high power source to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber, and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.

摘要翻译： 一种用于清洁用于制造电子器件的沉积室的方法，包括以下步骤：将前体气体输送到位于沉积室外的远程室中，经由高功率源激活远程室中的前体气体，以形成 将反应性物质从远程室流入沉积室，以及使用从远程室流入沉积室的反应物质以清洁沉积室的内部。

公开(公告)号：US07029529B2

公开(公告)日：2006-04-18

申请号：US10247403

申请日：2002-09-19

申请人： Kam S. Law ,  Robert Z. Bachrach ,  John M. White ,  Quanyuan Shang

发明人： Kam S. Law ,  Robert Z. Bachrach ,  John M. White ,  Quanyuan Shang

IPC分类号： B05C1/02 ,  B05C13/02

CPC分类号： C23C18/1632 ,  B05D1/002 ,  B05D7/142 ,  C23C18/1605 ,  C23C18/1608 ,  H01L21/288 ,  H01L21/76838 ,  H05K3/12 ,  H05K3/182

摘要： A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.

摘要翻译： 一种用于处理大面积基板的系统和方法。 在一个实施例中，用于处理大面积基板的系统包括准备台，冲压站和在冲压站和准备站之间自动移动的印模。 冲压站适于在其上保持大面积的基板。 印模具有适于微接触印刷的图案底面。 准备站用于将前体施加到印模的图案化底表面。 在一个实施例中，一种用于处理大面积衬底的方法包括以下步骤：将大面积衬底设置在压板上，上墨适用于微接触印刷，以及自动地将印模底部接触到支撑在压板上的大面积衬底。

公开(公告)号：US06887776B2

公开(公告)日：2005-05-03

申请号：US10412620

申请日：2003-04-11

申请人： Quanyuan Shang ,  John M. White ,  Robert Z. Bachrach ,  Kam S. Law

发明人： Quanyuan Shang ,  John M. White ,  Robert Z. Bachrach ,  Kam S. Law

IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765

摘要： Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.

摘要翻译： 提供了用于形成用于有源矩阵液晶显示器（AMLCD）的晶体管的方法。 在一个方面，提供了一种处理衬底的方法，包括提供玻璃衬底，在玻璃衬底的表面上沉积导电种子层，在导电种子层上沉积抗蚀剂材料，图案化抗蚀剂层以暴露部分导电 种子层，以及通过电化学技术在导电种子层的暴露部分上沉积金属层。

公开(公告)号：US06880561B2

公开(公告)日：2005-04-19

申请号：US10430955

申请日：2003-05-05

申请人： Haruhiro Harry Goto ,  William R. Harshbarger ,  Quanyuan Shang ,  Kam S. Law

发明人： Haruhiro Harry Goto ,  William R. Harshbarger ,  Quanyuan Shang ,  Kam S. Law

IPC分类号： B08B5/00 ,  B08B7/00 ,  C23C16/44 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B08B9/00

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S134/902 ,  Y10S438/905

摘要： A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

摘要翻译： 使用分子氟气（F 2 N 2）作为主要前体试剂从半导体处理室的内部除去残留物的方法。 在一个实施方案中，分子氟的一部分在等离子体中分解以产生原子氟，并且将所得到的原子氟和分子氟的混合物供应到其内部要清洁的室。 在另一个实施方案中，分子氟气清洁半导体处理室而没有任何等离子体激发。 与通常用于室内清洗的含氟气体化合物不同，分子氟气具有不是全球变暖气体的优点，例如NF 3 N，C 2 F 6＆lt; 6＆gt;和SF＆lt; 6＆gt ;.

公开(公告)号：US06843258B2

公开(公告)日：2005-01-18

申请号：US09741529

申请日：2000-12-19

申请人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

发明人： Quanyuan Shang ,  Sanjay Yadav ,  William R. Harshbarger ,  Kam S. Law

IPC分类号： C23C16/44 ,  B08B9/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S134/902 ,  Y10S438/905

摘要： Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

摘要翻译： 本文提供了一种用于清洁用于半导体和/或平板显示器制造的处理室的方法。 该方法包括以下步骤：将非清洁进料气体转化为远程位置的清洁气体，然后将清洁气体输送到处理室进行清洁。 这种方法还可以包括在将气体输送到室之前激活室外的清洁气体的步骤。 还提供了一种通过冷冻冷凝从清洁气体中清除未清洁进料气体的方法。